位置：首页 > IC中文资料第3628页 > IRFRC20TRR
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRFRC20TRR | Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The s | VishayVishay Siliconix 威世威世科技公司 |   | |
IRFRC20TRR | Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The s | KERSEMI | | |
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The s | KERSEMI | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The s | KERSEMI | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The s | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The s | KERSEMI | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The s | KERSEMI | | ||
Power MOSFET 文件：1.13808 Mbytes Page：13 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：1.13808 Mbytes Page：13 Pages | VishayVishay Siliconix 威世威世科技公司 | |
IRFRC20TRR产品属性
- 类型
描述
- 型号
IRFRC20TRR
- 功能描述
MOSFET N-Chan 600V 2.0 Amp
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY(威世) |
24+ |
TO252 |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
|||
IR |
24+ |
TO-252 |
36800 |
||||
VISHAY(威世) |
2447 |
TO-252-3 |
115000 |
3000个/圆盘一级代理专营品牌!原装正品,优势现货, |
|||
IR |
23+ |
TO-252 |
8000 |
只做原装现货 |
|||
IR |
23+ |
TO-252 |
7000 |
||||
NK/南科功率 |
2025+ |
TO-252 |
986966 |
国产 |
|||
VISHAY/威世 |
23+ |
TO-252 |
46000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
24+ |
N/A |
51000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
INFINEON/英飞凌 |
23+ |
PG-TO262 |
69820 |
终端可以免费供样,支持BOM配单! |
|||
INTERNATIONA |
06+ |
原厂原装 |
6216 |
只做全新原装真实现货供应 |
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IRFRC20TRR规格书下载地址
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瀚佳科技(深圳）有限公司： 专业销售集成电路IC.单片机.内存闪存.二三级管模块等电子元器件。
2018-12-30
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