N-Channel MOSFET

Features * VDS (V)=60V * RDS(ON) 15.8m (VGS = 10V) Benefits * Improved Gate, Avalanche and Dynamic dv/dt Ruggedness * Fully Characterized Capacitance and Avalanche SOA * Enhanced body diode dV/dt and dI/dt Capability

N-Channel MOSFET

Features VDS (V)=60V RDS(ON)

60V 单个 N 通道 HEXFET Power MOSFET, 采用 D-Pak 封装

N-Channel MOSFET Transistor

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Advanced Process Technology

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N-Channel MOSFET

Features * VDS (V)=60V * RDS(ON) 15.8m (VGS = 10V) Benefits * Improved Gate, Avalanche and Dynamic dv/dt Ruggedness * Fully Characterized Capacitance and Avalanche SOA * Enhanced body diode dV/dt and dI/dt Capability

N-Channel MOSFET

Features VDS (V)=60V RDS(ON)

N-Channel Enhancement Mode MOSFET

Application » Adaptor « Charger « Power management o SMPS Standby Power

High Efficiency Synchronous Rectification in SMPS

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HEXFET Power MOSFET

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High Efficiency Synchronous Rectification in SMPS

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The OSIRE E3323 is designed for automotive ambient applications.

Features - Package: white SMD package, colorless clear silicone resin - Chip technology: Thinfilm / ThinGaN - Color: λdom = 626 nm (● red); λdom = 533 nm (● true green); λdom = 462 nm (● blue) - Corrosion Robustness Class: 3B - Qualifications: AEC-Q102 Qualified - ESD: 2 kV acc. to ANSI/ESDA

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