位置：首页 > IC中文资料第1880页 > IRFR120Z
IRFR120Z价格
参考价格：￥1.5428
型号：IRFR120ZPBF 品牌：INTERNATIONAL 备注：这里有IRFR120Z多少钱，2025年最近7天走势，今日出价，今日竞价，IRFR120Z批发/采购报价，IRFR120Z行情走势销售排行榜，IRFR120Z报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRFR120Z | AUTOMOTIVE MOSFET AUTOMOTIVE MOSFET Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switch | IRF |   | |
IRFR120Z | AUTOMOTIVE MOSFET AUTOMOTIVE MOSFET Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switch | KERSEMI | | |
IRFR120Z | N-Channel MOSFET Transistor • DESCRITION • Fast switching • FEATURES • Static drain-source on-resistance: RDS(on)≤190mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation | ISC 无锡固电 | | |
IRFR120Z | N-Channel Enhancement Mode MOSFET Description The D-PAK is designed for surface mounting using vapor phase,infraredor wave soldering techniques. Power dissipation levels up to 1.5 watts are possible in typical surface mo- unt applications. Features VDS (V) = 100V ID = 9.4A (VGS = 10V) RDS(ON) =210mW (VGS = 10V) | EVVOSEMI 翊欧 | | |
IRFR120Z | AUTOMOTIVE MOSFET Features ● Advanced Process Technology ● Ultra Low On-Resistance ● 175°C Operating Temperature ● Fast Switching ● Repetitive Avalanche Allowed up to Tjmax | IRF | | |
IRFR120Z | 采用 D-Pak 封装的 100V 单 N 通道 HEXFET 功率 MOSFET | Infineon 英飞凌 | | |
AUTOMOTIVE MOSFET AUTOMOTIVE MOSFET Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switch | KERSEMI | | ||
AUTOMOTIVE MOSFET AUTOMOTIVE MOSFET Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switch | KERSEMI | | ||
AUTOMOTIVE MOSFET AUTOMOTIVE MOSFET Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switch | IRF | | ||
AUTOMOTIVE MOSFET Features ● Advanced Process Technology ● Ultra Low On-Resistance ● 175°C Operating Temperature ● Fast Switching ● Repetitive Avalanche Allowed up to Tjmax | IRF | | ||
Advanced Process Technology 文件：324.18 Kbytes Page：11 Pages | IRF | | ||
Advanced Process Technology 文件：324.18 Kbytes Page：11 Pages | IRF | | ||
Precision Wirewound Resistors 100 Series / SM Series / PC Series • Resistances to 6 Megohms • Resistance Tolerances to ±0.005 • Temperature Coeffcients of ±2 ppm/°C • High TCR Available (Balco & Platinum Wire) • 100 Acceptance Tested / Traceable to NIST • Long Term Stability / 100ppm/year • Matched Resistance Sets t | Riedon | | ||
SHIELDED SMT POWER INDUCTORS ● FEATURE Various high power inductor are Superior to be high saturation for surface mounting ● APPLICATIONS 2 DC/DC converter power supply, Telecommunication equipment | PRODUCTWELL | | ||
THREADED INSERT, BLIND, REGULAR HEAD STYLE LIGHT DUTY-PRESS IN 文件：106.68 Kbytes Page：1 Pages | WITTEN | | ||
Precision Wirewound Resistors 文件：318.25 Kbytes Page：2 Pages | Riedon | | ||
Temperature Sensors Line Guide 文件：736.09 Kbytes Page：11 Pages | Honeywell 霍尼韦尔 | |
IRFR120Z产品属性
- 类型
描述
- 型号
IRFR120Z
- 功能描述
MOSFET N-CH 100V 8.7A DPAK
- RoHS
否
- 类别
分离式半导体产品 >> FET - 单
- 系列
HEXFET®
- 标准包装
1,000
- 系列
MESH OVERLAY™ FET
- 型
MOSFET N 通道，金属氧化物 FET
- 特点
逻辑电平门
- 漏极至源极电压(Vdss)
200V 电流 - 连续漏极(Id) @ 25°
- C
18A 开态Rds（最大）@ Id, Vgs @ 25°
- C
180 毫欧 @ 9A，10V Id 时的
- Vgs(th)（最大）
4V @ 250µA 闸电荷(Qg) @
- Vgs
72nC @ 10V 输入电容(Ciss) @
- Vds
1560pF @ 25V 功率 -
- 最大
40W
- 安装类型
通孔
- 封装/外壳
TO-220-3 整包
- 供应商设备封装
TO-220FP
- 包装
管件
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
24+ |
NA/ |
13795 |
原装现货,当天可交货,原型号开票 |
|||
IR |
24+ |
TO-252 |
500876 |
免费送样原盒原包现货一手渠道联系 |
|||
IR |
23+ |
NA |
1228 |
专做原装正品,假一罚百! |
|||
Infineon/英飞凌 |
21+ |
DPAK |
6820 |
只做原装,质量保证 |
|||
IR |
24+ |
TO-252 |
10575 |
只做原厂渠道 可追溯货源 |
|||
IR |
24+ |
D-Pak |
8866 |
||||
Infineon(英飞凌) |
24+ |
TO-252 |
7793 |
支持大陆交货,美金交易。原装现货库存。 |
|||
INFINEON/英飞凌 |
2409+ |
n/a |
100 |
原装现货真实库存!量大特价! |
|||
Infineon |
23+ |
MOSFET |
5864 |
原装原标原盒 给价就出 全网最低 |
|||
IR |
24+ |
N/A |
8000 |
全新原装正品,现货销售 |
IRFR120Z规格书下载地址
IRFR120Z参数引脚图相关
- l101
- l100
- ku波段
- kt250
- kse13005
- ks20
- km710
- ka5q1265rf
- k9f1208
- k310
- k2698
- k233
- k2055
- k2010
- jumper
- jtag接口
- jk触发器
- j111
- j108
- isd1420
- IRFS540
- IRFS530
- IRFS510
- IRFS450
- IRFS250
- IRFRC20
- IRFR825
- IRFR812
- IRFR48Z
- IRFR420
- IRFR410
- IRFR330
- IRFR325
- IRFR320
- IRFR310
- IRFR230
- IRFR224
- IRFR220
- IRFR214
- IRFR210TRPBF
- IRFR210TRLPBF
- IRFR210PBF
- IRFR210BTF
- IRFR210
- IRFR1N60ATRPBF
- IRFR1N60APBF
- IRFR18N15DTRPBF
- IRFR18N15DTRLP
- IRFR18N15DPBF
- IRFR15N20DTRPBF
- IRFR15N20DTRLP
- IRFR15N20DPBF
- IRFR13N20DTRPBF
- IRFR13N20DTRLP
- IRFR13N20DPBF
- IRFR13N15DTRPBF
- IRFR13N15DPBF
- IRFR120ZTRPBF
- IRFR120ZTRLPBF
- IRFR120ZPBF
- IRFR120TRPBF-CUTTAPE
- IRFR120TRPBF
- IRFR120PBF
- IRFR120NTRPBF
- IRFR120NTRLPBF-CUTTAPE
- IRFR120NTRLPBF
- IRFR120NPBF
- IRFR1205TRPBF
- IRFR1205TRLPBF
- IRFR1205PBF
- IRFR120
- IRFR110TRPBF-CUTTAPE
- IRFR110TRPBF
- IRFR110TRLPBF
- IRFR110PBF
- IRFR110
- IRFR1018ETRPBF
- IRFR1018EPBF
- IRFR1010ZPBF
- IRFR024TRPBF-CUTTAPE
- IRFR024TRPBF
- IRFR024
- IRFR020
- IRFR014
- IRFR012
- IRFR010
- IRFQ110
- IRFPG50
- IRFPG40
- IRFPG30
- IRFPF50
- IRFPF40
- IRFPF30
- IRFPE50
- IRFPE40
- IRFPE30
- IRFPC60
- IRFPC50
- IRFPC48
IRFR120Z数据表相关新闻
IRFR15N20DTRPBF
表面贴装型 N 通道 200 V 17A（Tc） 3W（Ta），140W（Tc） D-PAK（TO-252AA）
2022-10-19IRFP4668PBF 全新原装现货
IRFP4668PBF
2022-6-27IRFR13N20DTRPBF
联系人张生 电话19926428992 QQ1924037095
2021-10-12IRFR13N20DTRPBF
属性 参数值 商品目录 场效应管(MOSFET) 漏源电压(Vdss) 200V 连续漏极电流(Id) 13A 功率(Pd) 110W 导通电阻(RDS(on)@Vgs，Id) 235mΩ 10V，8A 阈值电压(Vgs(th)@Id) 5.5V 250μA 类型 N沟道
2021-10-12IRFP460PBF
IRFP460PBF
2021-5-20IRFP460PBF 原装正品 现货供应
IRFP460PBF 原装现货供应 0755-28892389 13713856319 QQ:2639752116
2021-3-12
DdatasheetPDF页码索引
- P1
- P2
- P3
- P4
- P5
- P6
- P7
- P8
- P9
- P10
- P11
- P12
- P13
- P14
- P15
- P16
- P17
- P18
- P19
- P20
- P21
- P22
- P23
- P24
- P25
- P26
- P27
- P28
- P29
- P30
- P31
- P32
- P33
- P34
- P35
- P36
- P37
- P38
- P39
- P40
- P41
- P42
- P43
- P44
- P45
- P46
- P47
- P48
- P49
- P50
- P51
- P52
- P53
- P54
- P55
- P56
- P57
- P58
- P59
- P60
- P61
- P62
- P63
- P64
- P65
- P66
- P67
- P68
- P69
- P70
- P71
- P72
- P73
- P74
- P75
- P76
- P77
- P78
- P79
- P80
- P81
- P82
- P83
- P84
- P85
- P86
- P87
- P88
- P89
- P90
- P91
- P92
- P93
- P94
- P95
- P96
- P97
- P98
- P99
- P100
- P101
- P102
- P103
- P104
- P105
