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| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IRFR120TRR | IRFR120 DESCRIPTION ThirdgenerationpowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest | VishayVishay Siliconix 威世科技 |  |   |
IRFR120TRR | PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest | KERSEMI Kersemi Electronic Co., Ltd. |  | |
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest | KERSEMI Kersemi Electronic Co., Ltd. | | | |
IRFR120 DESCRIPTION ThirdgenerationpowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest | VishayVishay Siliconix 威世科技 | | | |
PowerMOSFET 文件：838.17 Kbytes Page：13 Pages | VishayVishay Siliconix 威世科技 | | | |
PowerMOSFET 文件：838.17 Kbytes Page：13 Pages | VishayVishay Siliconix 威世科技 | | | |
SHIELDEDSMTPOWERINDUCTORS ●FEATURE VarioushighpowerinductorareSuperior tobehighsaturationforsurfacemounting ●APPLICATIONS 2DC/DCconverterpowersupply, Telecommunicationequipment | PRODUCTWELLProductwell Precision Elect.CO.,LTD 寶德華股台灣寶德華股有限公司 |  | | |
PrecisionWirewoundResistors 100Series/SMSeries/PCSeries •Resistancesto6Megohms •ResistanceTolerancesto±0.005 •TemperatureCoeffcientsof±2ppm/°C •HighTCRAvailable(Balco&PlatinumWire) •100AcceptanceTested/TraceabletoNIST •LongTermStability/100ppm/year •MatchedResistanceSetst | Riedon Riedon Inc. |  | | |
THREADEDINSERT,BLIND,REGULARHEADSTYLELIGHTDUTY-PRESSIN 文件：106.68 Kbytes Page：1 Pages | WITTEN Witten Company, Inc. |  | | |
PrecisionWirewoundResistors 文件：318.25 Kbytes Page：2 Pages | Riedon Riedon Inc. | | | |
TemperatureSensorsLineGuide 文件：736.09 Kbytes Page：11 Pages | HoneywellHoneywell Sensing and Productivity Solutions 霍尼韦尔霍尼韦尔国际 |  | |
IRFR120TRR产品属性
- 类型
描述
- 型号
IRFR120TRR
- 功能描述
MOSFET N-Chan 100V 7.7 Amp
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VB |
D-PAK |
68900 |
原包原标签100%进口原装常备现货! |
||||
Vishay Siliconix |
24+ |
TO-252AA |
30000 |
晶体管-分立半导体产品-原装正品 |
|||
Vishay Siliconix |
23+ |
TO2523 DPak (2 Leads + Tab) SC |
9000 |
原装正品，支持实单 |
|||
VISHAY(威世) |
23+ |
TO-252 |
9908 |
支持大陆交货,美金交易。原装现货库存。 |
|||
IR |
22+ |
SOT-1444&NBS |
4500 |
全新原装品牌专营 |
|||
IR |
23+ |
D-Pak |
8600 |
全新原装现货 |
|||
SLKOR |
1836+ |
TO-252 |
9852 |
只做原装正品现货!或订货假一赔十! |
|||
IR |
18+ |
DPAK |
85600 |
保证进口原装可开17%增值税发票 |
|||
Vishay Siliconix |
21+ |
TO2523 DPak (2 Leads + Tab) SC |
13880 |
公司只售原装,支持实单 |
|||
INTERNATIONA |
06+ |
原厂原装 |
15370 |
只做全新原装真实现货供应 |
IRFR120TRR芯片相关品牌
IRFR120TRR规格书下载地址
IRFR120TRR参数引脚图相关
- l101
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- jumper
- jtag接口
- jk触发器
- j111
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- isd1420
- IRFS540
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- IRFRC20
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- IRFR12N25DTRRP
- IRFR12N25DTRPBF
- IRFR12N25DTRLP
- IRFR12N25DTRLHR
- IRFR12N25DPBF
- IRFR12N25DHR
- IRFR12N25DCTRRP
- IRFR12N25DCTRLP
- IRFR12N25DCPBF
- IRFR12N25D
- IRFR121
- IRFR120ZTRPBF
- IRFR120ZTRLPBF
- IRFR120ZTRL
- IRFR120ZTR
- IRFR120ZPBF
- IRFR120ZHR
- IRFR120Z
- IRFR120TRRPBF
- IRFR120TRPBF
- IRFR120TRLPBF
- IRFR120TRL
- IRFR120TR
- IRFR120T_R4941
- IRFR120PBF
- IRFR120NTRRPBF
- IRFR120NTRPBF
- IRFR120NTRLPBF
- IRFR120NTRL
- IRFR120NTR
- IRFR120NTPBF
- IRFR120NPBF
- IRFR120NHR
- IRFR120NCTRLPBF
- IRFR120NCPBF
- IRFR120N
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- IRFPG30
- IRFPF50
- IRFPF40
- IRFPF30
- IRFPE50
- IRFPE40
- IRFPE30
- IRFPC60
- IRFPC50
- IRFPC48
IRFR120TRR数据表相关新闻
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属性参数值 商品目录场效应管(MOSFET) 漏源电压(Vdss)200V 连续漏极电流(Id)13A 功率(Pd)110W 导通电阻(RDS(on)@Vgs，Id)235mΩ10V，8A 阈值电压(Vgs(th)@Id)5.5V250μA 类型N沟道
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2021-3-12
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