位置：首页 > IC中文资料第1387页 > IRFR120TRL
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRFR120TRL | Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st | VishayVishay Siliconix 威世威世科技公司 |   | |
IRFR120TRL | IRFR120 DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st | VishayVishay Siliconix 威世威世科技公司 | | |
IRFR120TRL | Dynamic dV/dt Rating DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st | KERSEMI | | |
IRFR120TRL | Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st | KERSEMI | | |
IRFR120TRL | Dynamic dV/dt Rating 文件：4.27854 Mbytes Page：7 Pages | KERSEMI | | |
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st | KERSEMI | | ||
Dynamic dV/dt Rating DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st | KERSEMI | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st | VishayVishay Siliconix 威世威世科技公司 | | ||
IRFR120 DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st | VishayVishay Siliconix 威世威世科技公司 | | ||
Dynamic dV/dt Rating 文件：4.27854 Mbytes Page：7 Pages | KERSEMI | | ||
Power MOSFET 文件：838.17 Kbytes Page：13 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：838.17 Kbytes Page：13 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Precision Wirewound Resistors 100 Series / SM Series / PC Series • Resistances to 6 Megohms • Resistance Tolerances to ±0.005 • Temperature Coeffcients of ±2 ppm/°C • High TCR Available (Balco & Platinum Wire) • 100 Acceptance Tested / Traceable to NIST • Long Term Stability / 100ppm/year • Matched Resistance Sets t | Riedon | | ||
SHIELDED SMT POWER INDUCTORS ● FEATURE Various high power inductor are Superior to be high saturation for surface mounting ● APPLICATIONS 2 DC/DC converter power supply, Telecommunication equipment | PRODUCTWELL | | ||
THREADED INSERT, BLIND, REGULAR HEAD STYLE LIGHT DUTY-PRESS IN 文件：106.68 Kbytes Page：1 Pages | WITTEN | | ||
Precision Wirewound Resistors 文件：318.25 Kbytes Page：2 Pages | Riedon | | ||
Temperature Sensors Line Guide 文件：736.09 Kbytes Page：11 Pages | Honeywell 霍尼韦尔 | |
IRFR120TRL产品属性
- 类型
描述
- 型号
IRFR120TRL
- 功能描述
MOSFET N-Chan 100V 7.7 Amp
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
24+ |
NA/ |
4188 |
原装现货,当天可交货,原型号开票 |
|||
VISHAY |
12+ |
TO252 |
2533 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
VISHAY |
24+/25+ |
D-PAK(TO-252) |
6000 |
原装正品现货库存价优 |
|||
VISHAY |
24+ |
SOT-252 |
12000 |
VISHAY专营进口原装现货假一赔十 |
|||
Vishay |
NEW- |
MOSFETs |
100000 |
Trans MOSFET N-CH 100V 7.7A 3-Pin(2+Tab) DPAK T/R |
|||
IR |
24+ |
TO-252 |
90000 |
一级代理商进口原装现货、价格合理 |
|||
IR |
24+ |
SOT-1443&NBS |
4500 |
只做原装正品现货 欢迎来电查询15919825718 |
|||
VISHAY |
25+23+ |
TO-252 |
18731 |
绝对原装正品全新进口深圳现货 |
|||
IR |
22+ |
TO-252 |
8000 |
原装正品支持实单 |
|||
IR |
24+ |
TO-252 |
36800 |
IRFR120TRL规格书下载地址
IRFR120TRL参数引脚图相关
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IRFR120TRL数据表相关新闻
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属性 参数值 商品目录 场效应管(MOSFET) 漏源电压(Vdss) 200V 连续漏极电流(Id) 13A 功率(Pd) 110W 导通电阻(RDS(on)@Vgs，Id) 235mΩ 10V，8A 阈值电压(Vgs(th)@Id) 5.5V 250μA 类型 N沟道
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DdatasheetPDF页码索引
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