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| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IRFR120TRL | PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest | VishayVishay Siliconix 威世科技 |  |   |
IRFR120TRL | IRFR120 DESCRIPTION ThirdgenerationpowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest | VishayVishay Siliconix 威世科技 | | |
IRFR120TRL | DynamicdV/dtRating DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest | KERSEMI Kersemi Electronic Co., Ltd. |  | |
IRFR120TRL | PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest | KERSEMI Kersemi Electronic Co., Ltd. | | |
IRFR120TRL | DynamicdV/dtRating 文件：4.27854 Mbytes Page：7 Pages | KERSEMI Kersemi Electronic Co., Ltd. | | |
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest | KERSEMI Kersemi Electronic Co., Ltd. | | | |
DynamicdV/dtRating DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest | KERSEMI Kersemi Electronic Co., Ltd. | | | |
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest | VishayVishay Siliconix 威世科技 | | | |
IRFR120 DESCRIPTION ThirdgenerationpowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest | VishayVishay Siliconix 威世科技 | | | |
DynamicdV/dtRating 文件：4.27854 Mbytes Page：7 Pages | KERSEMI Kersemi Electronic Co., Ltd. | | | |
PowerMOSFET 文件：838.17 Kbytes Page：13 Pages | VishayVishay Siliconix 威世科技 | | | |
PowerMOSFET 文件：838.17 Kbytes Page：13 Pages | VishayVishay Siliconix 威世科技 | | | |
PrecisionWirewoundResistors 100Series/SMSeries/PCSeries •Resistancesto6Megohms •ResistanceTolerancesto±0.005 •TemperatureCoeffcientsof±2ppm/°C •HighTCRAvailable(Balco&PlatinumWire) •100AcceptanceTested/TraceabletoNIST •LongTermStability/100ppm/year •MatchedResistanceSetst | Riedon Riedon Inc. |  | | |
SHIELDEDSMTPOWERINDUCTORS ●FEATURE VarioushighpowerinductorareSuperior tobehighsaturationforsurfacemounting ●APPLICATIONS 2DC/DCconverterpowersupply, Telecommunicationequipment | PRODUCTWELLProductwell Precision Elect.CO.,LTD 寶德華股台灣寶德華股有限公司 |  | | |
THREADEDINSERT,BLIND,REGULARHEADSTYLELIGHTDUTY-PRESSIN 文件：106.68 Kbytes Page：1 Pages | WITTEN Witten Company, Inc. |  | | |
PrecisionWirewoundResistors 文件：318.25 Kbytes Page：2 Pages | Riedon Riedon Inc. | | | |
TemperatureSensorsLineGuide 文件：736.09 Kbytes Page：11 Pages | HoneywellHoneywell Sensing and Productivity Solutions 霍尼韦尔霍尼韦尔国际 |  | |
IRFR120TRL产品属性
- 类型
描述
- 型号
IRFR120TRL
- 功能描述
MOSFET N-Chan 100V 7.7 Amp
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
23+ |
1018 |
D-PAK |
||||
Vishay Siliconix |
21+ |
TO2523 DPak (2 Leads + Tab) SC |
13880 |
公司只售原装,支持实单 |
|||
23+ |
N/A |
46480 |
正品授权货源可靠 |
||||
IR |
23+ |
NA/ |
4188 |
原装现货,当天可交货,原型号开票 |
|||
IRFR120TRL |
935 |
935 |
|||||
IR |
23+ |
TO-252 |
8000 |
专业优势供应 |
|||
Vishay Siliconix |
24+ |
TO-252AA |
30000 |
晶体管-分立半导体产品-原装正品 |
|||
IR |
TO-252 |
6000 |
原装现货,长期供应,终端可账期 |
||||
VISHAY/威世 |
22+21+ |
TO252 |
2933 |
16年电子元件现货供应商 终端BOM表可配单提供样品 |
|||
IR |
TO-252 |
265209 |
假一罚十原包原标签常备现货! |
IRFR120TRL芯片相关品牌
IRFR120TRL规格书下载地址
IRFR120TRL参数引脚图相关
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- IRFR12N25DCPBF
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- IRFR120ZTRPBF
- IRFR120ZTRLPBF
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- IRFR120ZHR
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- IRFR120TRRPBF
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- IRFR120NTRRPBF
- IRFR120NTRPBF
- IRFR120NTRLPBF
- IRFR120NTRL
- IRFR120NTR
- IRFR120NTPBF
- IRFR120NPBF
- IRFR120NHR
- IRFR120NCTRLPBF
- IRFR120NCPBF
- IRFR120N
- IRFR120ATM
- IRFR120ATF
- IRFR1205TRR
- IRFR1205TRPBF
- IRFR1205TRLPBF
- IRFR1205TRLHR
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- IRFQ110
- IRFPG50
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- IRFPG30
- IRFPF50
- IRFPF40
- IRFPF30
- IRFPE50
- IRFPE40
- IRFPE30
- IRFPC60
- IRFPC50
- IRFPC48
IRFR120TRL数据表相关新闻
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属性参数值 商品目录场效应管(MOSFET) 漏源电压(Vdss)200V 连续漏极电流(Id)13A 功率(Pd)110W 导通电阻(RDS(on)@Vgs，Id)235mΩ10V，8A 阈值电压(Vgs(th)@Id)5.5V250μA 类型N沟道
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2021-3-12
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