HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p

The D-PAK is designed for surface mounting using vapor phase,infraredor wave soldering techniques.

Features VDS (V) = 100V ID = 9.4A (VGS = 10V) RDS(ON) =210mW (VGS = 10V)

MOSFET

Description The D-PAK is designed for surface mounting using vapor phase,infraredor wave soldering techniques. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications. Features VDS (V) = 100V ID = 9.4A (VGS = 10V) RDS(ON) =210mW (VGS = 10V)

N-Channel MOSFET Transistor

文件：335.39 Kbytes Page：2 Pages

100V 单个 N 通道 HEXFET Power MOSFET, 采用 D-Pak 封装

Surface Mount (IRFR120N) Straight Lead (IRFU120N)

VDSS = 100V RDS(on) = 0.21Ω ID = 9.4A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device des

Fast Switching

VDSS = 100V RDS(on) = 0.21Ω ID = 9.4A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device des

N-Channel 100-V (D-S) MOSFET

Features @ Ros = 100m @VGS=10V ® Super high density cell design for extremely low RDS(ON) ® Exceptional on-resistance and maximum DC current

MOSFET

Description The D-PAK is designed for surface mounting using vapor phase,infraredor wave soldering techniques. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications. Features VDS (V) = 100V ID = 9.4A (VGS = 10V) RDS(ON) =210mW (VGS = 10V)

The D-PAK is designed for surface mounting using vapor phase,infraredor wave soldering techniques.

Features VDS (V) = 100V ID = 9.4A (VGS = 10V) RDS(ON) =210mW (VGS = 10V)

Surface Mount (IRFR120N)

文件：396.01 Kbytes Page：11 Pages

ADVANCED PROCESS TECHNOLOGY

文件：396.01 Kbytes Page：11 Pages

Surface Mount (IRFR120N)

文件：396.01 Kbytes Page：11 Pages

ADVANCED PROCESS TECHNOLOGY

文件：396.01 Kbytes Page：11 Pages

N-Channel 100 V (D-S) MOSFET

文件：979.62 Kbytes Page：7 Pages

Ultra Low On-Resistance

文件：249.71 Kbytes Page：11 Pages

Precision Wirewound Resistors

100 Series / SM Series / PC Series • Resistances to 6 Megohms • Resistance Tolerances to ±0.005 • Temperature Coeffcients of ±2 ppm/°C • High TCR Available (Balco & Platinum Wire) • 100 Acceptance Tested / Traceable to NIST • Long Term Stability / 100ppm/year • Matched Resistance Sets t

SHIELDED SMT POWER INDUCTORS

● FEATURE Various high power inductor are Superior to be high saturation for surface mounting ● APPLICATIONS 2 DC/DC converter power supply, Telecommunication equipment

THREADED INSERT, BLIND, REGULAR HEAD STYLE LIGHT DUTY-PRESS IN

文件：106.68 Kbytes Page：1 Pages

Precision Wirewound Resistors

文件：318.25 Kbytes Page：2 Pages

Temperature Sensors Line Guide

文件：736.09 Kbytes Page：11 Pages