250V 单 N 通道 StrongIRFET ™功率 MOSFET，采用 TO-247 封装

\n优势:\n• 符合 RoHS;

N-Channel MOSFET Transistor

文件：334.83 Kbytes Page：2 Pages

PDP SWITCH

Features ● Advanced Process Technology ● Key Parameters Optimized for PDP Sustain,Energy Recovery and Pass Switch Applications ● Low EPULSE Rating to Reduce Power Dissipation in PDP Sustain, Energy Recovery and Pass Switch Applications ● Low QG for Fast Response ● High Repetitive Peak Cu

Advanced Process Technology

文件：303.78 Kbytes Page：9 Pages

Advanced Process Technology

文件：303.78 Kbytes Page：9 Pages

21, 32, 43, 65 and 87 Seconds Complicate Pure Speech

General Description The AVXX32E-B is a series of single-chip synthesizing CMOS VLSI which synthesizes voice by LOG_PCM algorithm. Table programming and shared multiple I/O pins make the applications flexible. Powerful functions and pure speech architecture make the AVXX32E-B series able to best f

Triple 2:1 300 MHz Mux-Amp AV =2

General Description The EL4332C is a triple very high speed 2:1 Multiplexer-Amplifier. It is intended primarily for component video multiplexing and is especially suited for pixel switching. The amplifiers have their gain set to 2 internally, which reduces the need for many external components.

HIGH DENSITY 32 CHANNEL T1/E1/J1 FRAMER

DESCRIPTION The PM4332 High Density 32 Channel T1/E1 Framer is a feature-rich device for use in any application requiring high density framing of T1/J1 and E1 links. Each of the T1 and E1 framers and transmitters is independently software configurable, allowing timing master and feature selectio

PHOTOMULTlPLlER TUBES

PHOTOMULTlPLlER TUBES High Sensitivity, Bialkali Photocathode 28mm (1-1/8 Inch) Diameter, 9-Stage, Side-On Type FEATURES ● Spectral Response R3788 185 to 750 nm R4332 160 to 750 n

AF Power Amplifier (5W 5W min, THD = 1.0)

Features • Small and slim package with 25.5 mm height. • Capable of guaranteeing substrate temperature 125°C, thereby reducing heat sink. • Excellent cost performance.