23A, 400V, 0.200 Ohm, N-Channel Power MOSFET

This advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching c

Power MOSFET(Vdss=400V, Rds(on)=0.20ohm, Id=23A)

MegaMOS FET

Features • Fast switching times • International standard packages • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • High commuting dv/dt rating Applications • DC choppers • Motor Controls • Switch-mode and resonant-mode • Uninterruptable power supplies (UPS) Adva

isc N-Channel MOSFET Transistor

FEATURES • Drain Current –ID= 23A@ TC=25℃ • Drain Source Voltage- : VDSS= 400V(Min) • Static Drain-Source On-Resistance : RDS(on) = 0.2Ω(Max) • Fast Switching DESCRIPTION • Designed for use in switch mode power supplies and general purpose applications.

Avalanche-Energy-Rated N-Channel Power MOSFETs

The IRFP360 and IRFP362 are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of opera tion These are n-channel enhancement-mode silicon-gate power field-effect transistors designed for applications such as switching re

Power MOSFET

FEATURES • Dynamic dV/dt rated • Repetitive avalanche rated • Isolated central mounting hole • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides info

Power MOSFET

文件：1.032369 Mbytes Page：11 Pages

Power MOSFET

文件：962.94 Kbytes Page：8 Pages

Power MOSFET

FEATURES • Dynamic dV/dt rated • Repetitive avalanche rated • Isolated central mounting hole • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides info

Power MOSFET

FEATURES • Ultra low gate charge • Reduced gate drive requirement • Enhanced 30 V VGS rating • Reduced Ciss, Coss, Crss • Isolated central mounting hole • Dynamic dV/dt rated • Repetitive avalanche rated • Material categorization: for definitions of compliance please see www.vishay.com/do

Power MOSFET(Vdss=400V, Rds(on)=0.20ohm, Id=23A)

Description This new series of Low Charge HEXFET Power MOSFETs achieve significantly lower gate charge over conventional MOSFETs. Utilizing advanced Hexfet technology the device improvements allow for reduced gate drive requirements, faster switching speeds and increased total system savings. The

Power MOSFET

FEATURES • Ultra low gate charge • Reduced gate drive requirement • Enhanced 30 V VGS rating • Reduced Ciss, Coss, Crss • Isolated central mounting hole • Dynamic dV/dt rated • Repetitive avalanche rated • Material categorization: for definitions of compliance please see www.vishay.com/do

HEXFET Power MOSFET

Description This new series of Low Charge HEXFET Power MOSFETs achieve significantly lower gate charge over conventional MOSFETs. Utilizing advanced Hexfet technology the device improvements allow for reduced gate drive requirements, faster switching speeds and increased total system savings. The

Power MOSFET

文件：260.38 Kbytes Page：8 Pages

isc N-Channel MOSFET Transistor

文件：325.19 Kbytes Page：2 Pages

Power MOSFET

文件：1.04588 Mbytes Page：9 Pages

Power MOSFET

文件：1.06844 Mbytes Page：11 Pages

Power MOSFET

文件：1.04588 Mbytes Page：9 Pages

Power MOSFET

文件：1.06844 Mbytes Page：11 Pages

Power MOSFET

文件：1.06844 Mbytes Page：11 Pages

Power MOSFET

文件：260.38 Kbytes Page：8 Pages

Power MOSFET

文件：962.94 Kbytes Page：8 Pages

HEXFET짰 Power MOSFET

文件：855.22 Kbytes Page：7 Pages

isc N-Channel MOSFET Transistor

文件：316.37 Kbytes Page：2 Pages

Power MOSFET

文件：1.032369 Mbytes Page：11 Pages

Double Coated Tape with Quick Bonding Adhesive 360

文件：40.21 Kbytes Page：4 Pages

Celeron D Processor

文件：2.07013 Mbytes Page：95 Pages

COMPACT, LOW-PROFILE SOLUTION FOR A BROAD RANGE OF FILTRATION APPLICATIONS

文件：255.63 Kbytes Page：2 Pages

Programmable XO

文件：145.97 Kbytes Page：3 Pages

360W - Single Output AC-DC Converter - Universal Input - Isolated & Regulated Industrial DIN Rail Power Supply

文件：2.76774 Mbytes Page：6 Pages