Power MOSFET(Vdss=150V, Rds(on)=0.042ohm, Id=43A)

Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well know

N-Channel MOSFET Transistor

• DESCRITION • Fast switching • Fully Avalanche Rated • FEATURES • Static drain-source on-resistance: RDS(on)≤42mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

采用 TO-247 封装的 150V 单 N 沟道功率 MOSFET

\n优势:\n• 符合 RoHS\n• 低 RDS(on)\n• 具有业内先进的品质\n• 动态的dv/dt额定值\n• 快速开关\n• 完全雪崩额定值\n• 175°C 的工作温度;

HEXFET짰 Power MOSFET

Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well know

Advanced Process Technology

文件：167.21 Kbytes Page：9 Pages

Advanced Process Technology

文件：167.21 Kbytes Page：9 Pages

isc N-Channel MOSFET Transistor

文件：67.84 Kbytes Page：2 Pages

0.5 AMPERE POWER TRANSISTORS NPN SILICON 150-200 VOLTS 20 WATTS

Plastic NPN Silicon Medium-Power Transistors . . . useful for medium voltage applications requiring high fT such as converters and extended range amplifiers.

3-Terminal Positive Voltage Regulators

文件：310.99 Kbytes Page：11 Pages

Single with Shutdown/Dual/Quad General Purpose, 2.7V, Rail-to-Rail Output, 125째C, Operational Amplifiers

文件：694.92 Kbytes Page：17 Pages

Single with Shutdown/Dual/Quad General Purpose, 2.7V, Rail-to-Rail Output, 125째C, Operational Amplifiers

文件：694.92 Kbytes Page：17 Pages

Single with Shutdown/Dual/Quad General Purpose, 2.7V, Rail-to-Rail Output, 125째C, Operational Amplifiers

文件：694.92 Kbytes Page：17 Pages