Power MOSFET

DESCRIPTION Fifth generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well know for, provides the designer wit

Power MOSFET(Vdss=250V, Rds(on)=60mohm, Id=44A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

Power MOSFET

Power MOSFET(Vdss=250V, Rds(on)=60mohm, Id=44A)

HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

Power MOSFET

DESCRIPTION Fifth generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well know for, provides the designer wit

Military DC-DC Converters 50 to 100W

Military DC-DC Converters 50 to 100W Features Inputs: 28Vdc per MIL-STD-704D/E 155Vdc per MIL-STD-1399A 270Vdc per MIL-STD-704D/E Single output: 2 – 48Vdc Up to 23W/in3 MIL-STD-810 environments Up to 90 efficiency Remote sense Current limit OVP a

Military DC-DC Converters 50 to 100W

Military DC-DC Converters 50 to 100W Features Inputs: 28Vdc per MIL-STD-704D/E 155Vdc per MIL-STD-1399A 270Vdc per MIL-STD-704D/E Single output: 2 – 48Vdc Up to 23W/in3 MIL-STD-810 environments Up to 90 efficiency Remote sense Current limit OVP a

Military DC-DC Converters 50 to 100W

Military DC-DC Converters 50 to 100W Features Inputs: 28Vdc per MIL-STD-704D/E 155Vdc per MIL-STD-1399A 270Vdc per MIL-STD-704D/E Single output: 2 – 48Vdc Up to 23W/in3 MIL-STD-810 environments Up to 90 efficiency Remote sense Current limit OVP a

Silicon Complementary Transistors Darlington Power Amplifier

Description: The NTE263 (NPN) and NTE264 (PNP) are complementary silicon Darlington power transistors in a TO220 type package designed for general purpose amplifier and low–speed switching applications. Features: • High DC Current Gain: hFE = 2500 Typ (NTE263) = 3500 T

TRISILTM

DESCRIPTION The SMTPBxx series has been designedto protect telecommunication equipment against lightning and transient induced by AC power lines. FEATURES BIDIRECTIONAL CROWBAR PROTECTION. BREAKDOWNVOLTAGE RANGE: From 62 V To 270 V. HOLDING CURRENT: IH= 150 mA min REPETITIVE PE