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IRFIB41N15D价格
参考价格：￥4.9468
型号：IRFIB41N15DPBF 品牌：International 备注：这里有IRFIB41N15D多少钱，2026年最近7天走势，今日出价，今日竞价，IRFIB41N15D批发/采购报价，IRFIB41N15D行情走势销售排行榜，IRFIB41N15D报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRFIB41N15D | HEXFET Power MOSFET Benefits ● Low Gate-to-Drain Charge to Reduce Switching Losses ● Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) ● Fully Characterized Avalanche Voltage and Current Applications ● High frequency DC-DC converters | IRF |   | |
IRFIB41N15D | Isc N-Channel MOSFET Transistor 文件：260.61 Kbytes Page：2 Pages | ISC 无锡固电 | | |
IRFIB41N15D | TO-220 全封装 (Iso) 中的 150V 单 N 通道 HEXFET 功率 MOSFET | INFINEON 英飞凌 | | |
High frequency DC-DC converters Benefits ● Low Gate-to-Drain Charge to Reduce Switching Losses ● Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) ● Fully Characterized Avalanche Voltage and Current ● Lead-Free Applications ● High frequency DC-DC converters | INFINEON 英飞凌 | | ||
HEXFET Power MOSFET Benefits ● Low Gate-to-Drain Charge to Reduce Switching Losses ● Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) ● Fully Characterized Avalanche Voltage and Current Applications ● High frequency DC-DC converters ● Lead-Free | IRF | | ||
Power MOSFET(Vdss=150V, Rds(on)max=0.045ohm, Id=41A) Benefits ● Low Gate-to-Drain Charge to Reduce Switching Losses ● Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) ● Fully Characterized Avalanche Voltage and Current Applications ● High frequency DC-DC converters | IRF | | ||
N-Channel MOSFET Transistor • DESCRITION • High frequency DC-DC converters • FEATURES • Static drain-source on-resistance: RDS(on) ≤45mΩ • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation | ISC 无锡固电 | | ||
N-Channel MOSFET Transistor • DESCRITION • High frequency DC-DC converters • FEATURES • Static drain-source on-resistance: RDS(on) ≤45mΩ • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation | ISC 无锡固电 | | ||
HEXFET Power MOSFET Benefits ● Low Gate-to-Drain Charge to Reduce Switching Losses ● Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) ● Fully Characterized Avalanche Voltage and Current Applications ● High frequency DC-DC converters | IRF | | ||
Power MOSFET(Vdss=150V, Rds(on)max=0.045ohm, Id=41A) Benefits ● Low Gate-to-Drain Charge to Reduce Switching Losses ● Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) ● Fully Characterized Avalanche Voltage and Current Applications ● High frequency DC-DC converters | IRF | |
IRFIB41N15D产品属性
- 类型
描述
- 型号
IRFIB41N15D
- 制造商
IRF
- 制造商全称
International Rectifier
- 功能描述
HEXFET Power MOSFET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
26+ |
SOP-5 |
86720 |
全新原装正品价格最实惠 假一赔百 |
|||
INFINEON/英飞凌 |
24+ |
NA |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
INFINEON/英飞凌 |
25+ |
TO-220F |
20300 |
INFINEON/英飞凌原装特价IRFIB41N15D即刻询购立享优惠#长期有货 |
|||
IR |
23+ |
TO-220 |
89032 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
Infineon Technologies |
24+ |
原装 |
5000 |
原装正品,提供BOM配单服务 |
|||
IR |
2015+ |
TO-220F |
12500 |
全新原装,现货库存长期供应 |
|||
Infineon(英飞凌) |
2447 |
TO-220F |
105000 |
50个/管一级代理专营品牌!原装正品,优势现货,长期 |
|||
IR |
1923+ |
TO-220F |
5000 |
正品原装品质假一赔十 |
|||
IR |
23+ |
TO-220F |
7300 |
专注配单,只做原装进口现货 |
|||
IR |
23+ |
TO220 |
50000 |
全新原装正品现货,支持订货 |
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IRFIB41N15D规格书下载地址
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DdatasheetPDF页码索引
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