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IRFI620价格
参考价格：￥3.6455
型号：IRFI620GPBF 品牌：Vishay 备注：这里有IRFI620多少钱，2025年最近7天走势，今日出价，今日竞价，IRFI620批发/采购报价，IRFI620行情走势销售排行榜，IRFI620报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
200V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hi | Fairchild 仙童半导体 |   | ||
Power MOSFET(Vdss=200V, Rds(on)=0.80ohm, Id=4.1A) DESCRIPTION Third Generation HEXFETs International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial ap | IRF | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applicat | VishayVishay Siliconix 威世威世科技公司 | | ||
HEXFET Power MOSFET DESCRIPTION Third Generation HEXFETs International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial ap | IRF | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applicat | VishayVishay Siliconix 威世威世科技公司 | | ||
200V N-Channel MOSFET | ONSEMI 安森美半导体 | | ||
Power MOSFET 文件：271.41 Kbytes Page：10 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET(Vdss=200V, Rds(on)=0.80ohm, Id=4.1A) | Infineon 英飞凌 | | ||
Power MOSFET 文件：271.41 Kbytes Page：10 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：271.41 Kbytes Page：10 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
DC axial fans 文件：375.69 Kbytes Page：3 Pages | EBMPAPST 依必安派特 | | ||
DC axial fans 文件：505.68 Kbytes Page：3 Pages | EBMPAPST 依必安派特 | | ||
Low Profile 文件：146.94 Kbytes Page：2 Pages | OSCILENT | | ||
DC axial fans 文件：430.87 Kbytes Page：3 Pages | EBMPAPST 依必安派特 | | ||
SuperSOT??80V NPN SILICON LOW SATURATION TRANSISTOR 文件：240.96 Kbytes Page：6 Pages | Zetex | |
IRFI620产品属性
- 类型
描述
- 型号
IRFI620
- 功能描述
MOSFET N-CH 200V 4.1A TO220FP
- RoHS
否
- 类别
分离式半导体产品 >> FET - 单
- 系列
-
- 标准包装
1,000
- 系列
MESH OVERLAY™ FET
- 型
MOSFET N 通道，金属氧化物 FET
- 特点
逻辑电平门
- 漏极至源极电压(Vdss)
200V 电流 - 连续漏极(Id) @ 25°
- C
18A 开态Rds（最大）@ Id, Vgs @ 25°
- C
180 毫欧 @ 9A，10V Id 时的
- Vgs(th)（最大）
4V @ 250µA 闸电荷(Qg) @
- Vgs
72nC @ 10V 输入电容(Ciss) @
- Vds
1560pF @ 25V 功率 -
- 最大
40W
- 安装类型
通孔
- 封装/外壳
TO-220-3 整包
- 供应商设备封装
TO-220FP
- 包装
管件
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
24+ |
TO-220 |
1050 |
||||
VISHAY/威世 |
2450+ |
TO-220F |
9850 |
只做原装正品现货或订货假一赔十! |
|||
Vishay |
24+ |
NA |
3000 |
进口原装正品优势供应 |
|||
IR |
2025+ |
TO-220 |
3550 |
全新原厂原装产品、公司现货销售 |
|||
IR |
22+ |
TO-220 |
8000 |
原装正品支持实单 |
|||
IR |
24+ |
TO-220 F |
27500 |
原装正品,价格最低! |
|||
VISHAY |
23+ |
TO-220 |
8560 |
受权代理!全新原装现货特价热卖! |
|||
IR |
0623+ |
TO-220F |
3000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
VISHAY |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
VISHAY |
23+24 |
TO-220 |
29840 |
主营MOS管,二极.三极管,肖特基二极管.功率三极管 |
IRFI620规格书下载地址
IRFI620参数引脚图相关
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DdatasheetPDF页码索引
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