Power MOSFET(Vdss=55V, Rds(on)=0.012ohm, Id=49A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

Isc N-Channel MOSFET Transistor

• FEATURES • With TO-220F package • Low input capacitance and gate charge • Low gate input resistance • Reduced switching and conduction losses • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching application

55V 单个 N 通道 HEXFET Power MOSFET, 采用 TO-220 FullPAK(Iso)封装

HEXFET짰 Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

ADVANCED PROCESS TECHNOLOGY

文件：235.09 Kbytes Page：9 Pages

ADVANCED PROCESS TECHNOLOGY

文件：235.09 Kbytes Page：9 Pages

1010 Pressure Gauge

FEATURES Solid-front case design for safety Wide selection of Bourdon tube materials and pressure ranges PLUS!™ Performance option to dampen vibration, shock and pulsation effects to provide a liquid-fill performance in a dry gauge

Dead Blow Nylon Hammers

Die-cast one piece head and handle of aluminium alloy. Fitted with shock absorbent rubber grip. Screw-in faces of special nylon. The hollow head is partially filled with shot which adds to the weight and prevents re-bound. Allowing heavy and effective blows with maximum impact control.

Colorful Square Tactile Button Switch Assortment - 15 pack

文件：107.37 Kbytes Page：1 Pages

Voltage rating up to 3800V

文件：1.35889 Mbytes Page：5 Pages

Phase Control Thyristors

文件：1.3645 Mbytes Page：5 Pages