N-CHANNEL ENHANCEMENT-MODE POWER FIELD-EFFECT TRANSISTORS

N-Channel Enhancement-Mode Power Field-Effect Transistors 7.0A and 8.0A, 60V-100V rDS(on) = 0.18 Ω and 0.25 Ω

Power MOS Field-Effect Transistors

1 5/16

FEATURES • Suitable model for all industrial applications • Center tap available • Continuous rotation and mechanical stops both standard • Large electrical angle: 352° ± 2° • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912

RUGGED & LIGHTWEIGHT ALUMINUM BATTERY HOLDERS

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Fixed RF Inductors

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1 5/16(33.3mm) Low Cost Indeustrial Single Turn Wirewound, Bushing Mount Type Potentiometer

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RUGGED and LIGHTWEIGHT ALUMINUM BATTERY HOLDERS

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