1.0A, 100V, 0.6 Ohm, P-Channel Power MOSFET

This advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are P-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching c

Power MOSFET

FEATURES • Dynamic dv/dt rating • Repetitive avalanche rated • For automatic Insertion • End stackable • P-channel • 175 °C operating temperature • Fast switching • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third generation

1.0A, 100V, 0.6 Ohm, P-Channel Power MOSFET

Features • 1.0A, 100V • rDS(ON) = 0.6W • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance

Power MOSFET(Vdss=-100V, Rds(on)=0.60ohm, Id=-1.0A)

DESCRIPTION Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. FEATURES • Dynamic dV/dt Rating • Repetitive Avalanche Rated • For Automatic Insertion • En

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The 4 pin DIP package is a low cost machine-insertiable case style which can be stacked in multiple combina

Power MOSFET

FEATURES • Dynamic dv/dt rating • Repetitive avalanche rated • For automatic Insertion • End stackable • P-channel • 175 °C operating temperature • Fast switching • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third generation

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The 4 pin DIP package is a low cost machine-insertiable case style which can be stacked in multiple combina

1.0A, 100V, 0.6 Ohm, P-Channel Power MOSFET

Power MOSFET

Power MOSFET(Vdss=-100V, Rds(on)=0.60ohm, Id=-1.0A)

Power MOSFET

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SB® 350 Connectors Up to 500 Amps

The SB® 350 is the largest connector in the series with power capabilities up to 500 amps with a 350 mcm wire. Wires ranging from 1/0 to 350 mcm (53.5 to 185 mm²) fit into the one piece housing available in standard PC or a chemical resistant PBT/PC blend. Silver plated wire or busbar contact

SB® 350 Connector

FEATURES • Mechanical keyed housings Prevents accidental mating of components operating at different voltage levels • Single-piece housing and unitized construction Provides industrial quality and durability • Genderless design Makes assembly quick and easy and reduces number of parts sto

NYLON TUBE SPACERS

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NYLON TUBE SPACERS

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M12?륚 Plastic Passive I/O Box

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