HEXFET짰 TRANSISTORS P-CHANNEL HEXDIP?

HEXFET® TRANSISTORS P-CHANNEL HEXDIP™ 1-WATT TRATED POWER MOSFETs IN A 4-PIN, DUAL-IN-LINE PACKAGE FEATURES ■ For Automatic Insertion ■ Compact, End Stackable ■ Fast Switching ■ Low Drive Current ■ Easy Paralleled ■ Excellent Temperature Stability ■ P-Channel Versatility

Power MOSFET

DESCRIPTION The HVMDIP technology is the key to Vishay’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of the HVMDIP design achieves very low on-state resistance combined with high transconductance and extreme device ruggedness. FEATURES • For Automatic

Power MOSFET

HEXFET® TRANSISTORS P-CHANNEL HEXDIP™

BALUN 75/120 BNC F KRONE IDC

SPECIFICATIONS; MATERIALS; BODY: BRASS INNER CONTACT: PHOSPHORUS BRONZE INSULATOR: PTFE OUTER SLEEVE & BASE MOLDING: NORYL, BLACK IDC MOLDING: POLYESTER, WHITE FINISH; BODY: NICKEL PLATE CONTACT: GOLD PLATE IDC CONTACTS: SILVER PLATE ELECTRICAL; CHARACTERISTIC IMPEDANCE: 75 OH

4 x E1/T1 Fiber Mux/De-mux over One Fiber Optic Cable

DESCRIPTION The ACS406CS comprises a chip set of two highly integrated devices, the ACS9010 and ACS4060. The ACS9010 is an analog transceiver device and the ACS4060 is a mixed signal device. FEATURES • Two chip set supporting full duplex serial data transmission up to 8.448Mbps over one fiber

Heyco® Self-Closing Braided Sleeving

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900 MHz ISM Band Analog RF Front End

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900 MHz ISM Band Analog RF Front End

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