Power MOSFET

VDS (V) 250 RDS(on) (Ω) VGS = 10 V 2.0 Qg (Max.) (nC) 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration Single DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectivenes

HEXFET Power MOSFET

VDSS = 250V RDS(on) = 2.0Ω ID = 0.45A Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness. The 4-pin DIP package is a low-cost machine-insertable ca

CCD Video Camera Signal Processor ICs

■ Overview The AN2145NFHP is a CCD video camera signal processor IC for 510H CCD. It incorporates full chroma signal LPFs and horizontal aperture correction circuits. Because carrier-balance is rationalized and ajustment-free, adjustments and necessary external components are reduced half in numb

Amlifier Transistors (PNP)

Amplifier Transistors PNP Silicon

LOW DROP POWER SCHOTTKY RECTIFIER

Description Schottky rectifiers designed for high frequency miniature switched mode power supplies such as adaptors and on board DC/DC converters. Packaged in SMA or SMB, the STPS1L30 is ideal for use in parallel with MOSFETs in synchronous rectification. Features • Very low forward voltage dr

Silicon NPN Transistor Darlington Driver

Description: The NTE214 is a silicon NPN Darlington transistor in a TO3P type package. Typical applications include motor drivers, printer hammer drivers, relay drivers, regulated DC power supply controllers. Features: • High DC Current Gain • Large Current Capacity and Wide ASO •

TRISILTM

DESCRIPTION The SMTPBxx series has been designedto protect telecommunication equipment against lightning and transient induced by AC power lines. FEATURES BIDIRECTIONAL CROWBAR PROTECTION. BREAKDOWNVOLTAGE RANGE: From 62 V To 270 V. HOLDING CURRENT: IH= 150 mA min REPETITIVE PE