HEXFET Power MOSFET

VDSS = 250V RDS(on) = 2.0Ω ID = 0.45A Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness. The 4-pin DIP package is a low-cost machine-insertable ca

Power MOSFET

VDS (V) 250 RDS(on) (Ω) VGS = 10 V 2.0 Qg (Max.) (nC) 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration Single DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectivenes

M8 Male 3 Pin Field Attachable

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M8 Male 3 Pin Field Attachable

文件：179.39 Kbytes Page：2 Pages

Li-ion/Li-Polymer Battery Charger Accepting Two Power Sources

文件：193.94 Kbytes Page：11 Pages

A Series 1-4 Pole Rotary Switches

文件：1.26409 Mbytes Page：5 Pages

1-4 Pole Rotary Switches

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