位置：首页 > IC中文资料第631页 > IRFD214
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IRFD214 | PowerMOSFET(Vdss=250V,Rds(on)=2.0ohm,Id=0.45A) VDSS=250V RDS(on)=2.0Ω ID=0.45A Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowonresistanceandcost-effectiveness.The4-pinDIPpackageisalow-costmachine-insertableca | IRFInternational Rectifier 英飞凌英飞凌科技公司 |  |   |
IRFD214 | PowerMOSFET VDS(V)250 RDS(on)(Ω)VGS=10V2.0 Qg(Max.)(nC)8.2 Qgs(nC)1.8 Qgd(nC)4.5 ConfigurationSingle DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectivenes | VishayVishay Siliconix 威世科技 |  | |
IRFD214 | PowerMOSFET FEATURES •DynamicdV/dtrating •Repetitiveavalancherated •Forautomaticinsertion •Endstackable •Fastswitching •Easeofparalleling •Simpledriverequirements •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 DESCRIPTION Thirdgene | VishayVishay Siliconix 威世科技 | | |
PowerMOSFET FEATURES •DynamicdV/dtrating •Repetitiveavalancherated •Forautomaticinsertion •Endstackable •Fastswitching •Easeofparalleling •Simpledriverequirements •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 DESCRIPTION Thirdgene | VishayVishay Siliconix 威世科技 | | | |
HEXFETPowerMOSFET VDSS=250V RDS(on)=2.0Ω ID=0.45A Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowonresistanceandcost-effectiveness.The4-pinDIPpackageisalow-costmachine-insertableca | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
PowerMOSFET VDS(V)250 RDS(on)(Ω)VGS=10V2.0 Qg(Max.)(nC)8.2 Qgs(nC)1.8 Qgd(nC)4.5 ConfigurationSingle DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectivenes | VishayVishay Siliconix 威世科技 | | | |
M8Male3PinFieldAttachable 文件：179.39 Kbytes Page：2 Pages | ALPHAWIREAlpha Wire 阿尔法电线 |  | | |
M8Male3PinFieldAttachable 文件：179.39 Kbytes Page：2 Pages | ALPHAWIREAlpha Wire 阿尔法电线 | | | |
Li-ion/Li-PolymerBatteryChargerAcceptingTwoPowerSources 文件：193.94 Kbytes Page：11 Pages | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 |  | | |
ASeries1-4PoleRotarySwitches 文件：1.26409 Mbytes Page：5 Pages | CK-COMPONENTS C&K Components |  | | |
1-4PoleRotarySwitches 文件：299.98 Kbytes Page：5 Pages | CK-COMPONENTS C&K Components | | |
IRFD214产品属性
- 类型
描述
- 型号
IRFD214
- 功能描述
MOSFET N-Chan 250V 0.45 Amp
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
23+ |
DIP-4 |
8650 |
受权代理!全新原装现货特价热卖! |
|||
Vishay Siliconix |
23+ |
4-HVMDIP |
30000 |
晶体管-分立半导体产品-原装正品 |
|||
Vishay Siliconix |
22+ |
4DIP |
9000 |
原厂渠道,现货配单 |
|||
INTERNATIONA |
05+ |
原厂原装 |
7016 |
只做全新原装真实现货供应 |
|||
Vishay Siliconix |
21+ |
4DIP |
13880 |
公司只售原装,支持实单 |
|||
IR |
DIP-4 |
265209 |
假一罚十原包原标签常备现货! |
||||
IR |
2020+ |
DIP-4 |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
|||
IR |
2022+ |
DIP-4 |
8600 |
英瑞芯只做原装正品 |
|||
VISHAY-威世 |
24+25+/26+27+ |
DIP-4.直插 |
9328 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
|||
IR |
22+ |
DIP-4 |
8000 |
原装正品支持实单 |
IRFD214芯片相关品牌
IRFD214规格书下载地址
IRFD214参数引脚图相关
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2019-5-5
DdatasheetPDF页码索引
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