位置：首页 > IC中文资料第631页 > IRFD214
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRFD214 | Power MOSFET(Vdss=250V, Rds(on)=2.0ohm, Id=0.45A) VDSS = 250V RDS(on) = 2.0Ω ID = 0.45A Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness. The 4-pin DIP package is a low-cost machine-insertable ca | IRF |   | |
IRFD214 | Power MOSFET VDS (V) 250 RDS(on) (Ω) VGS = 10 V 2.0 Qg (Max.) (nC) 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration Single DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectivenes | VishayVishay Siliconix 威世威世科技公司 | | |
IRFD214 | Power MOSFET FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • For automatic insertion • End stackable • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third gene | VishayVishay Siliconix 威世威世科技公司 | | |
IRFD214 | Power MOSFET | VishayVishay Siliconix 威世威世科技公司 | | |
IRFD214 | Power MOSFET(Vdss=250V, Rds(on)=2.0ohm, Id=0.45A) | Infineon 英飞凌 | | |
Power MOSFET FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • For automatic insertion • End stackable • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third gene | VishayVishay Siliconix 威世威世科技公司 | | ||
HEXFET Power MOSFET VDSS = 250V RDS(on) = 2.0Ω ID = 0.45A Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness. The 4-pin DIP package is a low-cost machine-insertable ca | IRF | | ||
Power MOSFET VDS (V) 250 RDS(on) (Ω) VGS = 10 V 2.0 Qg (Max.) (nC) 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration Single DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectivenes | VishayVishay Siliconix 威世威世科技公司 | | ||
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IRFD214产品属性
- 类型
描述
- 型号
IRFD214
- 功能描述
MOSFET N-Chan 250V 0.45 Amp
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY |
20+ |
na |
65790 |
原装优势主营型号-可开原型号增税票 |
|||
IR |
24+ |
NA/ |
4475 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
IR |
11+ |
DIP-4 |
1000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
IR |
25+23+ |
DIP-4 |
16406 |
绝对原装正品全新进口深圳现货 |
|||
IR |
22+ |
DIP-4 |
8000 |
原装正品支持实单 |
|||
IR |
23+ |
DIP-4 |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
IOR |
24+ |
DIP-4P |
68 |
||||
IR |
25+ |
PLCC44 |
18000 |
原厂直接发货进口原装 |
|||
INTERNATIONA |
05+ |
原厂原装 |
7016 |
只做全新原装真实现货供应 |
|||
Vishay Siliconix |
22+ |
4DIP |
9000 |
原厂渠道,现货配单 |
IRFD214规格书下载地址
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DdatasheetPDF页码索引
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