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| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IRFBF30S | Power MOSFET DESCRIPTION ThirdgenerationMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD2PAK(TO-263)packageisuniversiallypreferredforallcommercial-industrialapplicationsatpowerdissipat | VishayVishay Siliconix 威世科技威世科技半导体 |  |   |
Power MOSFET 文件：1.02821 Mbytes Page：9 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Power MOSFET 文件：279.75 Kbytes Page：9 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | |
IRFBF30S产品属性
- 类型
描述
- 型号
IRFBF30S
- 功能描述
MOSFET N-Chan 900V 1.7 Amp
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
24+ |
NA/ |
50 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
IR |
25+23+ |
TO263 |
74701 |
绝对原装正品现货,全新深圳原装进口现货 |
|||
VISHAY/威世 |
2022+ |
TO-263 |
30000 |
进口原装现货供应,原装 假一罚十 |
|||
IR |
23+ |
TO263 |
7000 |
||||
IR |
1922+ |
TO-263 |
2938 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
Vishay Siliconix |
2025+ |
TO-263(D2Pak) |
56303 |
||||
IR |
23+ |
TO-263 |
35890 |
||||
IR |
23+ |
D2PAK |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
IR |
23+ |
TO263 |
50000 |
全新原装正品现货,支持订货 |
|||
Vishay Siliconix |
22+ |
TO2633 D2Pak (2 Leads + Tab) T |
9000 |
原厂渠道,现货配单 |
IRFBF30S芯片相关品牌
IRFBF30S规格书下载地址
IRFBF30S参数引脚图相关
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2019-5-5
DdatasheetPDF页码索引
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