N-Ch 100V Fast Switching MOSFETs

Description The IRFB4410Z uses advanced trench technologyto provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 100V ID = 70 A RDS(ON)

100V 单个 N 通道 HEXFET Power MOSFET, 采用 TO-220AB 封装

N-Channel MOSFET Transistor

文件：339.29 Kbytes Page：2 Pages

HEXFET Power MOSFET

Benefits ● Improved Gate, Avalanche and Dynamic dV/dt Ruggedness ● Fully Characterized Capacitance and Avalanche SOA ● Enhanced body diode dV/dt and dI/dt Capability ● Lead-Free Applications ● High Efficiency Synchronous Rectification in SMPS ● Uninterruptible Power Supply ● High Speed Pow

100V 单个 N 通道 HEXFET Power MOSFET, 采用无铅无卤素 TO-220AB 封装

N-Channel MOSFET Transistor

文件：339.34 Kbytes Page：2 Pages

HEXFETPower MOSFET

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High Efficiency Synchronous Rectification in SMPS

文件：336.33 Kbytes Page：12 Pages

High Efficiency Synchronous Rectification in SMPS

文件：336.33 Kbytes Page：12 Pages

N-Channel Enhancement Mode Field Effect Transistor

N-Channel Enhancement Mode Field Effect Transistor

N-Channel Enhancement Mode MOSFET

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N-Channel 20V (D-S) MOSFET

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HEYConnect™ Terminal Bushings

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N-Channel 20V (D-S) MOSFET

文件：1.00712 Mbytes Page：9 Pages