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IRFB4410价格
参考价格：￥5.8452
型号：IRFB4410PBF 品牌：International 备注：这里有IRFB4410多少钱，2025年最近7天走势，今日出价，今日竞价，IRFB4410批发/采购报价，IRFB4410行情走势销售排行榜，IRFB4410报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRFB4410 | HEXFET Power MOSFET Benefits ● Improved Gate, Avalanche and Dynamic dV/dt Ruggedness ● Fully Characterized Capacitance and Avalanche SOA ● Enhanced body diode dV/dt and dI/dt Capability Applications ● High Efficiency Synchronous Rectification in SMPS ● Uninterruptible Power Supply ● High Speed Power Switching | IRF |   | |
IRFB4410 | N-Channel MOSFET Transistor 文件：338.69 Kbytes Page：2 Pages | ISC 无锡固电 | | |
IRFB4410 | 100V 单个 N 通道 HEXFET Power MOSFET, 采用 TO-220AB 封装 | Infineon 英飞凌 | | |
HEXFET Power MOSFET Benefits ● Improved Gate, Avalanche and Dynamic dV/dt Ruggedness ● Fully Characterized Capacitance and Avalanche SOA ● Enhanced body diode dV/dt and dI/dt Capability ● Lead-Free Applications ● High Efficiency Synchronous Rectification in SMPS ● Uninterruptible Power Supply ● High Speed Pow | IRF | | ||
N-Ch 100V Fast Switching MOSFETs Description The IRFB4410Z uses advanced trench technologyto provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 100V ID = 70 A RDS(ON) | EVVOSEMI 翊欧 | | ||
HEXFET Power MOSFET Benefits ● Improved Gate, Avalanche and Dynamic dV/dt Ruggedness ● Fully Characterized Capacitance and Avalanche SOA ● Enhanced body diode dV/dt and dI/dt Capability ● Lead-Free Applications ● High Efficiency Synchronous Rectification in SMPS ● Uninterruptible Power Supply ● High Speed Pow | IRF | | ||
N-Channel MOSFET Transistor 文件：339.29 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
100V 单个 N 通道 HEXFET Power MOSFET, 采用 TO-220AB 封装 | Infineon 英飞凌 | | ||
N-Channel MOSFET Transistor 文件：339.34 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
100V 单个 N 通道 HEXFET Power MOSFET, 采用无铅无卤素 TO-220AB 封装 | Infineon 英飞凌 | | ||
HEXFETPower MOSFET 文件：300.42 Kbytes Page：8 Pages | IRF | | ||
High Efficiency Synchronous Rectification in SMPS 文件：336.33 Kbytes Page：12 Pages | IRF | | ||
High Efficiency Synchronous Rectification in SMPS 文件：336.33 Kbytes Page：12 Pages | IRF | | ||
N-Channel Enhancement Mode Field Effect Transistor N-Channel Enhancement Mode Field Effect Transistor | CET 华瑞 | | ||
HEYConnect™ Terminal Bushings 文件：93.68 Kbytes Page：1 Pages | Heyco | | ||
N-Channel Enhancement Mode MOSFET 文件：523.71 Kbytes Page：4 Pages | HOTTECH 合科泰 | | ||
N-Channel 20V (D-S) MOSFET 文件：1.01333 Mbytes Page：9 Pages | VBSEMI 微碧半导体 | | ||
N-Channel 20V (D-S) MOSFET 文件：1.00712 Mbytes Page：9 Pages | VBSEMI 微碧半导体 | |
IRFB4410产品属性
- 类型
描述
- 型号
IRFB4410
- 功能描述
MOSFET N-CH 100V 96A TO-220AB
- RoHS
否
- 类别
分离式半导体产品 >> FET - 单
- 系列
HEXFET®
- 标准包装
1,000
- 系列
MESH OVERLAY™ FET
- 型
MOSFET N 通道，金属氧化物 FET
- 特点
逻辑电平门
- 漏极至源极电压(Vdss)
200V 电流 - 连续漏极(Id) @ 25°
- C
18A 开态Rds（最大）@ Id, Vgs @ 25°
- C
180 毫欧 @ 9A，10V Id 时的
- Vgs(th)（最大）
4V @ 250µA 闸电荷(Qg) @
- Vgs
72nC @ 10V 输入电容(Ciss) @
- Vds
1560pF @ 25V 功率 -
- 最大
40W
- 安装类型
通孔
- 封装/外壳
TO-220-3 整包
- 供应商设备封装
TO-220FP
- 包装
管件
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON |
23+ |
TO-220 |
20000 |
||||
Infineon |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
IR/国际整流器 |
21+ |
TO-220 |
10000 |
只做原装,质量保证 |
|||
IR |
24+ |
TO-220 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
IR |
24+ |
TO-220AB |
10000 |
只做原装欢迎含税交易,假一赔十,放心购买 |
|||
INFINEON/英飞凌 |
23+ |
NA |
5000 |
只有原装,欢迎来电咨询! |
|||
INFINEON/英飞凌 |
22+ |
TO-220 |
8000 |
原装正品,支持实单! |
|||
IR |
23+ |
SMD |
6000 |
原装正品，支持实单 |
|||
三年内 |
1983 |
只做原装正品 |
|||||
IR |
2023+ |
TO-220 |
50000 |
原装现货 |
IRFB4410规格书下载地址
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深圳市科恒伟业电子有限公司 深圳市福田区华强北振兴路101号华匀大厦2栋5楼516 网站 http://www.kehengweiyedz.cn 网站http://www.kehengweiye.com 邮箱：yulin522@126.com 0755-83200050 15817287769 柯先生
2020-4-21IRFB4410PBF
IRFB4410PBF
2019-3-5
DdatasheetPDF页码索引
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