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IRFB4410价格
参考价格：￥5.8452
型号：IRFB4410PBF 品牌：International 备注：这里有IRFB4410多少钱，2025年最近7天走势，今日出价，今日竞价，IRFB4410批发/采购报价，IRFB4410行情走势销售排行榜，IRFB4410报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IRFB4410 | HEXFET Power MOSFET Benefits ● Improved Gate, Avalanche and Dynamic dV/dt Ruggedness ● Fully Characterized Capacitance and Avalanche SOA ● Enhanced body diode dV/dt and dI/dt Capability Applications ● High Efficiency Synchronous Rectification in SMPS ● Uninterruptible Power Supply ● High Speed Power Switching | IRF |   | |
IRFB4410 | N-Channel MOSFET Transistor 文件：338.69 Kbytes Page：2 Pages | ISC 无锡固电 | | |
HEXFET Power MOSFET Benefits ● Improved Gate, Avalanche and Dynamic dV/dt Ruggedness ● Fully Characterized Capacitance and Avalanche SOA ● Enhanced body diode dV/dt and dI/dt Capability ● Lead-Free Applications ● High Efficiency Synchronous Rectification in SMPS ● Uninterruptible Power Supply ● High Speed Pow | IRF | | ||
N-Ch 100V Fast Switching MOSFETs Description The IRFB4410Z uses advanced trench technologyto provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 100V ID = 70 A RDS(ON) | EVVOSEMI 翊欧 | | ||
HEXFET Power MOSFET Benefits ● Improved Gate, Avalanche and Dynamic dV/dt Ruggedness ● Fully Characterized Capacitance and Avalanche SOA ● Enhanced body diode dV/dt and dI/dt Capability ● Lead-Free Applications ● High Efficiency Synchronous Rectification in SMPS ● Uninterruptible Power Supply ● High Speed Pow | IRF | | ||
N-Channel MOSFET Transistor 文件：339.29 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
N-Channel MOSFET Transistor 文件：339.34 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
HEXFETPower MOSFET 文件：300.42 Kbytes Page：8 Pages | IRF | | ||
High Efficiency Synchronous Rectification in SMPS 文件：336.33 Kbytes Page：12 Pages | IRF | | ||
High Efficiency Synchronous Rectification in SMPS 文件：336.33 Kbytes Page：12 Pages | IRF | | ||
N-Channel Enhancement Mode Field Effect Transistor N-Channel Enhancement Mode Field Effect Transistor | CET 华瑞 | | ||
HEYConnect™ Terminal Bushings 文件：93.68 Kbytes Page：1 Pages | HeycoHeyco. 海科 | | ||
N-Channel Enhancement Mode MOSFET 文件：523.71 Kbytes Page：4 Pages | HOTTECHGuangdong Hottech Co. Ltd. 合科泰深圳市合科泰电子有限公司 | | ||
N-Channel 20V (D-S) MOSFET 文件：1.01333 Mbytes Page：9 Pages | VBSEMI 微碧半导体 | | ||
N-Channel 20V (D-S) MOSFET 文件：1.00712 Mbytes Page：9 Pages | VBSEMI 微碧半导体 | |
IRFB4410产品属性
- 类型
描述
- 型号
IRFB4410
- 功能描述
MOSFET N-CH 100V 96A TO-220AB
- RoHS
否
- 类别
分离式半导体产品 >> FET - 单
- 系列
HEXFET®
- 标准包装
1,000
- 系列
MESH OVERLAY™ FET
- 型
MOSFET N 通道，金属氧化物 FET
- 特点
逻辑电平门
- 漏极至源极电压(Vdss)
200V 电流 - 连续漏极(Id) @ 25°
- C
18A 开态Rds（最大）@ Id, Vgs @ 25°
- C
180 毫欧 @ 9A，10V Id 时的
- Vgs(th)（最大）
4V @ 250µA 闸电荷(Qg) @
- Vgs
72nC @ 10V 输入电容(Ciss) @
- Vds
1560pF @ 25V 功率 -
- 最大
40W
- 安装类型
通孔
- 封装/外壳
TO-220-3 整包
- 供应商设备封装
TO-220FP
- 包装
管件
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
17+ |
TO-220 |
6200 |
100%原装正品现货 |
|||
Infineon |
23+ |
TO220 |
15500 |
英飞凌优势渠道全系列在售 |
|||
INFINEON/IR |
23+ |
TO-220-3 |
50000 |
原装正品 支持实单 |
|||
INFINEON/英飞凌 |
23+ |
NA |
9990 |
只有原装 |
|||
IR |
21+ |
TO-220AB |
10 |
原装现货假一赔十 |
|||
IR |
22+ |
TO-220 |
12245 |
现货,原厂原装假一罚十! |
|||
Infineon |
25+ |
TO-220 |
6000 |
原厂原装,价格优势 |
|||
INFINEON/英飞凌 |
25+ |
TO220 |
32000 |
INFINEON/英飞凌全新特价IRFB4410ZPBF即刻询购立享优惠#长期有货 |
|||
Infineon/英飞凌 |
24+ |
TO220 |
6000 |
全新原装深圳仓库现货有单必成 |
|||
IR |
2023+ |
TO-220 |
5800 |
进口原装,现货热卖 |
IRFB4410芯片相关品牌
IRFB4410规格书下载地址
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深圳市科恒伟业电子有限公司 深圳市福田区华强北振兴路101号华匀大厦2栋5楼516 网站 http://www.kehengweiyedz.cn 网站http://www.kehengweiye.com 邮箱：yulin522@126.com 0755-83200050 15817287769 柯先生
2020-4-21IRFB4410PBF
IRFB4410PBF
2019-3-5
DdatasheetPDF页码索引
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