Power MOSFET

DESCRIPTION The Power MOSFET technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFET design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The P-Channel

Power MOSFET

DESCRIPTION The Power MOSFET technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFET design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The P-Channel

P-CHANNEL 50 VOLT POWER MOSFETs

DESCRIPTION The HEXFET® technology is the key to Vishay’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of the HEXFET design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The P-Channel HEXFETd are

isc P-Channel MOSFET Transistor

FEATURES · Drain Current -ID= -8.9A@ TC=25℃ · Drain Source Voltage -VDSS=-50V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.33Ω(Max)@VGS= -10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

isc N-Channel MOSFET Transistor

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