IRF840L价格

参考价格:¥5.5386

型号:IRF840LCLPBF 品牌:Vishay 备注:这里有IRF840L多少钱,2025年最近7天走势,今日出价,今日竞价,IRF840L批发/采购报价,IRF840L行情走势销售排行榜,IRF840L报价。
型号 功能描述 生产厂家&企业 LOGO 操作
IRF840L

EaseofParalleling

文件:176.79 Kbytes Page:9 Pages

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

PowerMOSFET

DESCRIPTION ThisnewseriesoflowchargePowerMOSFETsachievesigniticantlylowergatechargeoverconventionalMOSFETs.UtilizingthenewLCDMOStechnology,thedeviceimprovementsareachievedwithoutaddedproductcost,allowingforreducedgatedriverequirementsandtotalsystemsavings.I

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

PowerMOSFET(Vdss=500V,Rds(on)=0.85ohm,Id=8.0A)

Description ThisnewseriesoflowchargeHEXFET®powerMOSFETsachievesignificantlowergatechargeoverconventionalMOSFETs.UtilizingthenewLCDMOS(lowchargedeviceMOSFETs)technology,thedeviceimprovementsareachievedwithoutaddedproductcost,allowingforreducegatedriverequirem

IRF

International Rectifier

IRF

PowerMOSFET

DESCRIPTION ThisnewseriesoflowchargePowerMOSFETsachievesignificantlylowergatechargethenconventionalPowerMOSFETs.UtilizingthenewLCDMOS(lowchargedevicePowerMOSFETs)technology,thedeviceimprovementsareachievedwithoutaddedproductcost,allowingforreducedgatedrive

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

PowerMOSFET

DESCRIPTION ThisnewseriesoflowchargePowerMOSFETsachievesignificantlylowergatechargethenconventionalPowerMOSFETs.UtilizingthenewLCDMOS(lowchargedevicePowerMOSFETs)technology,thedeviceimprovementsareachievedwithoutaddedproductcost,allowingforreducedgatedrive

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

PowerMOSFET

FEATURES •Ultralowgatecharge •Reducedgatedriverequirement •Enhanced30VVGSrating •ReducedCiss,Coss,Crss •Extremelyhighfrequencyoperation •Repetitiveavalancherated •Materialcategorization:fordefinitionsof compliancepleaseseewww.vishay.com/doc?99912 Note *Th

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

PowerMOSFET

DESCRIPTION ThisnewseriesoflowchargePowerMOSFETsachievesignificantlylowergatechargethenconventionalPowerMOSFETs.UtilizingthenewLCDMOS(lowchargedevicePowerMOSFETs)technology,thedeviceimprovementsareachievedwithoutaddedproductcost,allowingforreducedgatedrive

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

PowerMOSFET

DESCRIPTION ThisnewseriesoflowchargePowerMOSFETsachievesigniticantlylowergatechargeoverconventionalMOSFETs.UtilizingthenewLCDMOStechnology,thedeviceimprovementsareachievedwithoutaddedproductcost,allowingforreducedgatedriverequirementsandtotalsystemsavings.I

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

PowerMOSFET(Vdss=500V,Rds(on)=0.85ohm,Id=8.0A)

Description ThisnewseriesoflowchargeHEXFET®powerMOSFETsachievesignificantlowergatechargeoverconventionalMOSFETs.UtilizingthenewLCDMOS(lowchargedeviceMOSFETs)technology,thedeviceimprovementsareachievedwithoutaddedproductcost,allowingforreducegatedriverequirem

IRF

International Rectifier

IRF

PowerMOSFET

DESCRIPTION ThisnewseriesoflowchargePowerMOSFETsachievesignificantlylowergatechargethenconventionalPowerMOSFETs.UtilizingthenewLCDMOS(lowchargedevicePowerMOSFETs)technology,thedeviceimprovementsareachievedwithoutaddedproductcost,allowingforreducedgatedrive

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

PowerMOSFET

FEATURES •Ultralowgatecharge •Reducedgatedriverequirement •Enhanced30VVGSrating •ReducedCiss,Coss,Crss •Extremelyhighfrequencyoperation •Repetitiveavalancherated •Materialcategorization:fordefinitionsof compliancepleaseseewww.vishay.com/doc?99912 Note *Th

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

PowerMOSFET

DESCRIPTION ThisnewseriesoflowchargePowerMOSFETsachievesignificantlylowergatechargethenconventionalPowerMOSFETs.UtilizingthenewLCDMOS(lowchargedevicePowerMOSFETs)technology,thedeviceimprovementsareachievedwithoutaddedproductcost,allowingforreducedgatedrive

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

PowerMOSFET

FEATURES •Ultralowgatecharge •Reducedgatedriverequirement •Enhanced30VVGSrating •ReducedCiss,Coss,Crss •Extremelyhighfrequencyoperation •Repetitiveavalancherated •Materialcategorization:fordefinitionsof compliancepleaseseewww.vishay.com/doc?99912 Note *Th

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

PowerMOSFET

DESCRIPTION ThisnewseriesoflowchargePowerMOSFETsachievesignificantlylowergatechargethenconventionalPowerMOSFETs.UtilizingthenewLCDMOS(lowchargedevicePowerMOSFETs)technology,thedeviceimprovementsareachievedwithoutaddedproductcost,allowingforreducedgatedrive

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

PowerMOSFET

DESCRIPTION ThisnewseriesoflowchargePowerMOSFETsachievesignificantlylowergatechargethenconventionalPowerMOSFETs.UtilizingthenewLCDMOS(lowchargedevicePowerMOSFETs)technology,thedeviceimprovementsareachievedwithoutaddedproductcost,allowingforreducedgatedrive

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

PowerMOSFET

DESCRIPTION ThisnewseriesoflowchargePowerMOSFETsachievesignificantlylowergatechargethenconventionalPowerMOSFETs.UtilizingthenewLCDMOS(lowchargedevicePowerMOSFETs)technology,thedeviceimprovementsareachievedwithoutaddedproductcost,allowingforreducedgatedrive

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

iscN-ChannelMOSFETTransistor

文件:319.07 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

PowerMOSFET

文件:157.63 Kbytes Page:8 Pages

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

PowerMOSFET

文件:157.63 Kbytes Page:8 Pages

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

PowerMOSFET

文件:156.42 Kbytes Page:2 Pages

TELTokyo Electron Ltd.

东电电子东京电子有限公司

TEL

PowerMOSFET

文件:231.4 Kbytes Page:10 Pages

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

PowerMOSFET

文件:157.63 Kbytes Page:8 Pages

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

HEXFETPowerMOSFET

文件:993.4 Kbytes Page:8 Pages

IRF

International Rectifier

IRF

PowerMOSFET

文件:157.63 Kbytes Page:8 Pages

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

PowerMOSFET

文件:156.42 Kbytes Page:2 Pages

TELTokyo Electron Ltd.

东电电子东京电子有限公司

TEL

PowerMOSFET

文件:231.4 Kbytes Page:10 Pages

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

PowerMOSFET

文件:231.4 Kbytes Page:10 Pages

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

SurfaceMountZenerDiodes

Features ●latHandlingSurfaceforAccuratePlacement ●tandardZenerBreakdownVoltageRange-3.3Vto68V ●owProfilePackage

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

KEXIN

8A500VN-channelEnhancementModePowerMOSFET

文件:1.63311 Mbytes Page:12 Pages

WXDHJiangsu Donghai Semiconductor Technology Co.,Ltd

东海半导体江苏东海半导体股份有限公司

WXDH

9Amps竊?00VN-CHANNELMOSFET

文件:122.87 Kbytes Page:5 Pages

KIAKIA Semiconductor Technology

可易亚半导体广东可易亚半导体科技有限公司

KIA

8A竊?00VN-CHANNELMOSFET

文件:215.89 Kbytes Page:6 Pages

KIAKIA Semiconductor Technology

可易亚半导体广东可易亚半导体科技有限公司

KIA

8A500VN-CHANNELMOSFET

文件:242.9 Kbytes Page:7 Pages

KIAKIA Semiconductor Technology

可易亚半导体广东可易亚半导体科技有限公司

KIA

IRF840L产品属性

  • 类型

    描述

  • 型号

    IRF840L

  • 功能描述

    MOSFET N-Chan 500V 8.0 Amp

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2025-8-4 11:49:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
VISHAY/威世
2022+
TO-220
30000
进口原装现货供应,原装 假一罚十
IR
2016+
TO-262
6528
房间原装进口现货假一赔十
VISHAY
2024+
N/A
70000
柒号只做原装 现货价秒杀全网
VISHAY/威世
24+
TO-220AB
426
原厂授权代理 价格绝对优势
IR
24+
TO-262
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
IR
2015+
TO-220AB
12500
全新原装,现货库存长期供应
IR
23+
TO-262
8000
只做原装现货
SHARP/夏普
23+
DIP-3
69820
终端可以免费供样,支持BOM配单!
IR
1923+
TO-262
6896
原装进口现货库存专业工厂研究所配单供货
Vishay(威世)
2249+
Tube
60815
二十余载金牌老企 研究所优秀合供单位 您的原厂窗口

IRF840L芯片相关品牌

  • AMPHENOLCS
  • Central
  • GENESIC
  • Intersil
  • IRCTT
  • KSS
  • Marktech
  • PROTEC
  • PTC
  • SOURCE
  • TAIYO-YUDEN
  • WEITRON

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