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IRF840L价格
参考价格:¥5.5386
型号:IRF840LCLPBF 品牌:Vishay 备注:这里有IRF840L多少钱,2026年最近7天走势,今日出价,今日竞价,IRF840L批发/采购报价,IRF840L行情走势销售排行榜,IRF840L报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRF840L | Power MOSFET Dynamic dV/dt rating\nRepetitive avalanche rated\nFast switching; | VISHAYVishay Siliconix 威世威世科技公司 | ||
IRF840L | Ease of Paralleling 文件:176.79 Kbytes Page:9 Pages | VISHAYVishay Siliconix 威世威世科技公司 | ||
Power MOSFET DESCRIPTION This new series of low charge Power MOSFETs achieve signiticantly lower gate charge over conventional MOSFETs. Utilizing the new LCDMOS technology, the device improvements are achieved without added product cost, allowing for reduced gate drive requirements and total system savings. I | VISHAYVishay Siliconix 威世威世科技公司 | |||
Power MOSFET • Ultra low gate charge\n• Reduced gate drive requirement\n• Enhanced 30 V VGS rating; | VISHAYVishay Siliconix 威世威世科技公司 | |||
Power MOSFET FEATURES • Ultra low gate charge • Reduced gate drive requirement • Enhanced 30 V VGS rating • Reduced Ciss, Coss, Crss • Extremely high frequency operation • Repetitive avalanche rated • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * Th | VISHAYVishay Siliconix 威世威世科技公司 | |||
Power MOSFET DESCRIPTION This new series of low charge Power MOSFETs achieve significantly lower gate charge then conventional Power MOSFETs. Utilizing the new LCDMOS (low charge device Power MOSFETs) technology, the device improvements are achieved without added product cost, allowing for reduced gate drive | VISHAYVishay Siliconix 威世威世科技公司 | |||
Power MOSFET(Vdss=500V, Rds(on)=0.85ohm, Id=8.0A) Description This new series of low charge HEXFET®power MOSFETs achieve significant lower gate charge over conventional MOSFETs. Utilizing the new LCDMOS (low charge device MOSFETs) technology, the device improvements are achieved without added product cost, allowing for reduce gate drive requirem | IRF | |||
Power MOSFET DESCRIPTION This new series of low charge Power MOSFETs achieve significantly lower gate charge then conventional Power MOSFETs. Utilizing the new LCDMOS (low charge device Power MOSFETs) technology, the device improvements are achieved without added product cost, allowing for reduced gate drive | VISHAYVishay Siliconix 威世威世科技公司 | |||
Power MOSFET DESCRIPTION This new series of low charge Power MOSFETs achieve significantly lower gate charge then conventional Power MOSFETs. Utilizing the new LCDMOS (low charge device Power MOSFETs) technology, the device improvements are achieved without added product cost, allowing for reduced gate drive | VISHAYVishay Siliconix 威世威世科技公司 | |||
Power MOSFET DESCRIPTION This new series of low charge Power MOSFETs achieve signiticantly lower gate charge over conventional MOSFETs. Utilizing the new LCDMOS technology, the device improvements are achieved without added product cost, allowing for reduced gate drive requirements and total system savings. I | VISHAYVishay Siliconix 威世威世科技公司 | |||
Power MOSFET DESCRIPTION This new series of low charge Power MOSFETs achieve significantly lower gate charge then conventional Power MOSFETs. Utilizing the new LCDMOS (low charge device Power MOSFETs) technology, the device improvements are achieved without added product cost, allowing for reduced gate drive | VISHAYVishay Siliconix 威世威世科技公司 | |||
Power MOSFET DESCRIPTION This new series of low charge Power MOSFETs achieve significantly lower gate charge then conventional Power MOSFETs. Utilizing the new LCDMOS (low charge device Power MOSFETs) technology, the device improvements are achieved without added product cost, allowing for reduced gate drive | VISHAYVishay Siliconix 威世威世科技公司 | |||
Power MOSFET(Vdss=500V, Rds(on)=0.85ohm, Id=8.0A) Description This new series of low charge HEXFET®power MOSFETs achieve significant lower gate charge over conventional MOSFETs. Utilizing the new LCDMOS (low charge device MOSFETs) technology, the device improvements are achieved without added product cost, allowing for reduce gate drive requirem | IRF | |||
Power MOSFET FEATURES • Ultra low gate charge • Reduced gate drive requirement • Enhanced 30 V VGS rating • Reduced Ciss, Coss, Crss • Extremely high frequency operation • Repetitive avalanche rated • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * Th | VISHAYVishay Siliconix 威世威世科技公司 | |||
Power MOSFET FEATURES • Ultra low gate charge • Reduced gate drive requirement • Enhanced 30 V VGS rating • Reduced Ciss, Coss, Crss • Extremely high frequency operation • Repetitive avalanche rated • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * Th | VISHAYVishay Siliconix 威世威世科技公司 | |||
Power MOSFET DESCRIPTION This new series of low charge Power MOSFETs achieve significantly lower gate charge then conventional Power MOSFETs. Utilizing the new LCDMOS (low charge device Power MOSFETs) technology, the device improvements are achieved without added product cost, allowing for reduced gate drive | VISHAYVishay Siliconix 威世威世科技公司 | |||
Power MOSFET DESCRIPTION This new series of low charge Power MOSFETs achieve significantly lower gate charge then conventional Power MOSFETs. Utilizing the new LCDMOS (low charge device Power MOSFETs) technology, the device improvements are achieved without added product cost, allowing for reduced gate drive | VISHAYVishay Siliconix 威世威世科技公司 | |||
Power MOSFET DESCRIPTION This new series of low charge Power MOSFETs achieve significantly lower gate charge then conventional Power MOSFETs. Utilizing the new LCDMOS (low charge device Power MOSFETs) technology, the device improvements are achieved without added product cost, allowing for reduced gate drive | VISHAYVishay Siliconix 威世威世科技公司 | |||
Power MOSFET 文件:157.63 Kbytes Page:8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | |||
isc N-Channel MOSFET Transistor 文件:319.07 Kbytes Page:2 Pages | ISC 无锡固电 | |||
Power MOSFET 文件:157.63 Kbytes Page:8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | |||
Power MOSFET 文件:156.42 Kbytes Page:2 Pages | TEL | |||
Power MOSFET(Vdss=500V, Rds(on)=0.85ohm, Id=8.0A) | INFINEON 英飞凌 | |||
Power MOSFET 文件:231.4 Kbytes Page:10 Pages | VISHAYVishay Siliconix 威世威世科技公司 | |||
Power MOSFET 文件:157.63 Kbytes Page:8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | |||
HEXFET Power MOSFET 文件:993.4 Kbytes Page:8 Pages | IRF | |||
Power MOSFET 文件:157.63 Kbytes Page:8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | |||
Power MOSFET 文件:156.42 Kbytes Page:2 Pages | TEL | |||
Power MOSFET 文件:231.4 Kbytes Page:10 Pages | VISHAYVishay Siliconix 威世威世科技公司 | |||
Power MOSFET 文件:231.4 Kbytes Page:10 Pages | VISHAYVishay Siliconix 威世威世科技公司 | |||
N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR
| MOTOROLA 摩托罗拉 | |||
ULTRAFAST RECTIFIERS 8 AMPERES 200-400-600 VOLTS . . . designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • Ultrafast 25, 50 and 75 Nanosecond Recovery Time • 175°C Operating Junction Temperature • Popular TO–220 Package • Epoxy Meets U | MOTOROLA 摩托罗拉 | |||
ULTRAFAST RECTIFIER 8.0 AMPERES 400 VOLTS . . . designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • Ultrafast 28 Nanosecond Recovery Time • 175°C Operating Junction Temperature • Popular TO–220 Package • Epoxy Meets UL94, VO @ 1/8″ • High T | MOTOROLA 摩托罗拉 | |||
RF POWER TRANSISTOR NPN SILICON 文件:91.92 Kbytes Page:4 Pages | MOTOROLA 摩托罗拉 | |||
ULTRAFAST RECTIFIER 8.0 AMPERES 400 VOLTS 文件:107.56 Kbytes Page:6 Pages | MOTOROLA 摩托罗拉 |
IRF840L产品属性
- 类型
描述
- 型号
IRF840L
- 功能描述
MOSFET N-Chan 500V 8.0 Amp
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS(导通)
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
24+ |
TO-263 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
VISHAY |
2018+ |
26976 |
代理原装现货/特价热卖! |
||||
IRF840LCSTRR |
25+ |
21442 |
21442 |
||||
IR |
22+ |
D2-PAK |
8000 |
原装正品支持实单 |
|||
ir |
26+ |
NA |
6980 |
原装现货,可开13%税票 |
|||
INTERNATIONA |
06+ |
原厂原装 |
9016 |
只做全新原装真实现货供应 |
|||
VISHAY |
20+ |
na |
65790 |
原装优势主营型号-可开原型号增税票 |
|||
ir |
2023+ |
原厂封装 |
50000 |
原装现货 |
|||
IR |
25+ |
TO-263 |
30000 |
全新原装现货,价格优势 |
|||
IR |
25+23+ |
TO-263 |
26984 |
绝对原装正品全新进口深圳现货 |
IRF840L芯片相关品牌
IRF840L规格书下载地址
IRF840L参数引脚图相关
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- IRF840I
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- IRF830B
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- IRF830ALPBF
- IRF830A
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IRF840L数据表相关新闻
IRF9317TRPBF
原装
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IRF840ASPBF
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IRF9540PBF
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2020-8-27IRF840ASTRLPBF每一片都来自原厂
原厂很远 现货很近 坚持每一片芯片都来自原厂及授权渠道
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瀚佳科技: 专业销售集成电路IC.单片.内存闪存.二三级管模块等电子元器件.欢迎询价购买。
2018-12-28
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