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IRF840L价格
参考价格：￥5.5386
型号：IRF840LCLPBF 品牌：Vishay 备注：这里有IRF840L多少钱，2025年最近7天走势，今日出价，今日竞价，IRF840L批发/采购报价，IRF840L行情走势销售排行榜，IRF840L报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRF840L | Ease of Paralleling 文件：176.79 Kbytes Page：9 Pages | VishayVishay Siliconix 威世科技 |   | |
IRF840L | Power MOSFET | VishayVishay Siliconix 威世科技 | | |
Power MOSFET DESCRIPTION This new series of low charge Power MOSFETs achieve signiticantly lower gate charge over conventional MOSFETs. Utilizing the new LCDMOS technology, the device improvements are achieved without added product cost, allowing for reduced gate drive requirements and total system savings. I | VishayVishay Siliconix 威世科技 | | ||
Power MOSFET DESCRIPTION This new series of low charge Power MOSFETs achieve significantly lower gate charge then conventional Power MOSFETs. Utilizing the new LCDMOS (low charge device Power MOSFETs) technology, the device improvements are achieved without added product cost, allowing for reduced gate drive | VishayVishay Siliconix 威世科技 | | ||
Power MOSFET(Vdss=500V, Rds(on)=0.85ohm, Id=8.0A) Description This new series of low charge HEXFET®power MOSFETs achieve significant lower gate charge over conventional MOSFETs. Utilizing the new LCDMOS (low charge device MOSFETs) technology, the device improvements are achieved without added product cost, allowing for reduce gate drive requirem | IRF | | ||
Power MOSFET DESCRIPTION This new series of low charge Power MOSFETs achieve significantly lower gate charge then conventional Power MOSFETs. Utilizing the new LCDMOS (low charge device Power MOSFETs) technology, the device improvements are achieved without added product cost, allowing for reduced gate drive | VishayVishay Siliconix 威世科技 | | ||
Power MOSFET FEATURES • Ultra low gate charge • Reduced gate drive requirement • Enhanced 30 V VGS rating • Reduced Ciss, Coss, Crss • Extremely high frequency operation • Repetitive avalanche rated • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * Th | VishayVishay Siliconix 威世科技 | | ||
Power MOSFET DESCRIPTION This new series of low charge Power MOSFETs achieve significantly lower gate charge then conventional Power MOSFETs. Utilizing the new LCDMOS (low charge device Power MOSFETs) technology, the device improvements are achieved without added product cost, allowing for reduced gate drive | VishayVishay Siliconix 威世科技 | | ||
Power MOSFET DESCRIPTION This new series of low charge Power MOSFETs achieve signiticantly lower gate charge over conventional MOSFETs. Utilizing the new LCDMOS technology, the device improvements are achieved without added product cost, allowing for reduced gate drive requirements and total system savings. I | VishayVishay Siliconix 威世科技 | | ||
Power MOSFET DESCRIPTION This new series of low charge Power MOSFETs achieve significantly lower gate charge then conventional Power MOSFETs. Utilizing the new LCDMOS (low charge device Power MOSFETs) technology, the device improvements are achieved without added product cost, allowing for reduced gate drive | VishayVishay Siliconix 威世科技 | | ||
Power MOSFET(Vdss=500V, Rds(on)=0.85ohm, Id=8.0A) Description This new series of low charge HEXFET®power MOSFETs achieve significant lower gate charge over conventional MOSFETs. Utilizing the new LCDMOS (low charge device MOSFETs) technology, the device improvements are achieved without added product cost, allowing for reduce gate drive requirem | IRF | | ||
Power MOSFET FEATURES • Ultra low gate charge • Reduced gate drive requirement • Enhanced 30 V VGS rating • Reduced Ciss, Coss, Crss • Extremely high frequency operation • Repetitive avalanche rated • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * Th | VishayVishay Siliconix 威世科技 | | ||
Power MOSFET DESCRIPTION This new series of low charge Power MOSFETs achieve significantly lower gate charge then conventional Power MOSFETs. Utilizing the new LCDMOS (low charge device Power MOSFETs) technology, the device improvements are achieved without added product cost, allowing for reduced gate drive | VishayVishay Siliconix 威世科技 | | ||
Power MOSFET FEATURES • Ultra low gate charge • Reduced gate drive requirement • Enhanced 30 V VGS rating • Reduced Ciss, Coss, Crss • Extremely high frequency operation • Repetitive avalanche rated • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * Th | VishayVishay Siliconix 威世科技 | | ||
Power MOSFET DESCRIPTION This new series of low charge Power MOSFETs achieve significantly lower gate charge then conventional Power MOSFETs. Utilizing the new LCDMOS (low charge device Power MOSFETs) technology, the device improvements are achieved without added product cost, allowing for reduced gate drive | VishayVishay Siliconix 威世科技 | | ||
Power MOSFET DESCRIPTION This new series of low charge Power MOSFETs achieve significantly lower gate charge then conventional Power MOSFETs. Utilizing the new LCDMOS (low charge device Power MOSFETs) technology, the device improvements are achieved without added product cost, allowing for reduced gate drive | VishayVishay Siliconix 威世科技 | | ||
Power MOSFET DESCRIPTION This new series of low charge Power MOSFETs achieve significantly lower gate charge then conventional Power MOSFETs. Utilizing the new LCDMOS (low charge device Power MOSFETs) technology, the device improvements are achieved without added product cost, allowing for reduced gate drive | VishayVishay Siliconix 威世科技 | | ||
isc N-Channel MOSFET Transistor 文件：319.07 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
Power MOSFET 文件：157.63 Kbytes Page：8 Pages | VishayVishay Siliconix 威世科技 | | ||
Power MOSFET | VishayVishay Siliconix 威世科技 | | ||
Power MOSFET 文件：157.63 Kbytes Page：8 Pages | VishayVishay Siliconix 威世科技 | | ||
Power MOSFET(Vdss=500V, Rds(on)=0.85ohm, Id=8.0A) | Infineon 英飞凌 | | ||
Power MOSFET 文件：156.42 Kbytes Page：2 Pages | TEL 东电电子 | | ||
Power MOSFET 文件：231.4 Kbytes Page：10 Pages | VishayVishay Siliconix 威世科技 | | ||
Power MOSFET 文件：157.63 Kbytes Page：8 Pages | VishayVishay Siliconix 威世科技 | | ||
HEXFET Power MOSFET 文件：993.4 Kbytes Page：8 Pages | IRF | | ||
Power MOSFET 文件：157.63 Kbytes Page：8 Pages | VishayVishay Siliconix 威世科技 | | ||
Power MOSFET 文件：156.42 Kbytes Page：2 Pages | TEL 东电电子 | | ||
Power MOSFET 文件：231.4 Kbytes Page：10 Pages | VishayVishay Siliconix 威世科技 | | ||
Power MOSFET 文件：231.4 Kbytes Page：10 Pages | VishayVishay Siliconix 威世科技 | | ||
Surface Mount Zener Diodes Features ● lat Handling Surface for Accurate Placement ● tandard Zener Breakdown Voltage Range -3.3V to 68V ● ow Profile Package | KEXIN 科信电子 | | ||
8A 500V N-channel Enhancement Mode Power MOSFET 文件：1.63311 Mbytes Page：12 Pages | WXDH 东海半导体 | | ||
9Amps竊?00V N-CHANNEL MOSFET 文件：122.87 Kbytes Page：5 Pages | KIA 可易亚半导体 | | ||
8A竊?00V N-CHANNEL MOSFET 文件：215.89 Kbytes Page：6 Pages | KIA 可易亚半导体 | | ||
8A 500V N-CHANNEL MOSFET 文件：242.9 Kbytes Page：7 Pages | KIA 可易亚半导体 | |
IRF840L产品属性
- 类型
描述
- 型号
IRF840L
- 功能描述
MOSFET N-Chan 500V 8.0 Amp
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY |
2024+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
|||
VISHAY/威世 |
24+ |
TO-220AB |
426 |
原厂授权代理 价格绝对优势 |
|||
IR |
24+ |
TO-262 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
IR |
2015+ |
TO-220AB |
12500 |
全新原装,现货库存长期供应 |
|||
SHARP/夏普 |
23+ |
DIP-3 |
69820 |
终端可以免费供样,支持BOM配单! |
|||
IR |
23+ |
TO-262 |
8000 |
只做原装现货 |
|||
IR |
1923+ |
TO-262 |
6896 |
原装进口现货库存专业工厂研究所配单供货 |
|||
VishayIR |
24+ |
TO-262 |
151 |
||||
ir |
06+ |
TO-220 |
12500 |
自己公司全新库存绝对有货 |
|||
VISHAY(威世) |
24+ |
TO-220 |
7828 |
支持大陆交货,美金交易。原装现货库存。 |
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IRF840L规格书下载地址
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瀚佳科技： 专业销售集成电路IC.单片.内存闪存.二三级管模块等电子元器件.欢迎询价购买。
2018-12-28
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