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IRF840L价格

参考价格:¥5.5386

型号:IRF840LCLPBF 品牌:Vishay 备注:这里有IRF840L多少钱,2026年最近7天走势,今日出价,今日竞价,IRF840L批发/采购报价,IRF840L行情走势销售排行榜,IRF840L报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IRF840L

Power MOSFET

Dynamic dV/dt rating\nRepetitive avalanche rated\nFast switching;

VISHAYVishay Siliconix

威世威世科技公司

IRF840L

Ease of Paralleling

文件:176.79 Kbytes Page:9 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

DESCRIPTION This new series of low charge Power MOSFETs achieve signiticantly lower gate charge over conventional MOSFETs. Utilizing the new LCDMOS technology, the device improvements are achieved without added product cost, allowing for reduced gate drive requirements and total system savings. I

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

• Ultra low gate charge\n• Reduced gate drive requirement\n• Enhanced 30 V VGS rating;

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

FEATURES • Ultra low gate charge • Reduced gate drive requirement • Enhanced 30 V VGS rating • Reduced Ciss, Coss, Crss • Extremely high frequency operation • Repetitive avalanche rated • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * Th

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

DESCRIPTION This new series of low charge Power MOSFETs achieve significantly lower gate charge then conventional Power MOSFETs. Utilizing the new LCDMOS (low charge device Power MOSFETs) technology, the device improvements are achieved without added product cost, allowing for reduced gate drive

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET(Vdss=500V, Rds(on)=0.85ohm, Id=8.0A)

Description This new series of low charge HEXFET®power MOSFETs achieve significant lower gate charge over conventional MOSFETs. Utilizing the new LCDMOS (low charge device MOSFETs) technology, the device improvements are achieved without added product cost, allowing for reduce gate drive requirem

IRF

Power MOSFET

DESCRIPTION This new series of low charge Power MOSFETs achieve significantly lower gate charge then conventional Power MOSFETs. Utilizing the new LCDMOS (low charge device Power MOSFETs) technology, the device improvements are achieved without added product cost, allowing for reduced gate drive

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

DESCRIPTION This new series of low charge Power MOSFETs achieve significantly lower gate charge then conventional Power MOSFETs. Utilizing the new LCDMOS (low charge device Power MOSFETs) technology, the device improvements are achieved without added product cost, allowing for reduced gate drive

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

DESCRIPTION This new series of low charge Power MOSFETs achieve signiticantly lower gate charge over conventional MOSFETs. Utilizing the new LCDMOS technology, the device improvements are achieved without added product cost, allowing for reduced gate drive requirements and total system savings. I

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

DESCRIPTION This new series of low charge Power MOSFETs achieve significantly lower gate charge then conventional Power MOSFETs. Utilizing the new LCDMOS (low charge device Power MOSFETs) technology, the device improvements are achieved without added product cost, allowing for reduced gate drive

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

DESCRIPTION This new series of low charge Power MOSFETs achieve significantly lower gate charge then conventional Power MOSFETs. Utilizing the new LCDMOS (low charge device Power MOSFETs) technology, the device improvements are achieved without added product cost, allowing for reduced gate drive

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET(Vdss=500V, Rds(on)=0.85ohm, Id=8.0A)

Description This new series of low charge HEXFET®power MOSFETs achieve significant lower gate charge over conventional MOSFETs. Utilizing the new LCDMOS (low charge device MOSFETs) technology, the device improvements are achieved without added product cost, allowing for reduce gate drive requirem

IRF

Power MOSFET

FEATURES • Ultra low gate charge • Reduced gate drive requirement • Enhanced 30 V VGS rating • Reduced Ciss, Coss, Crss • Extremely high frequency operation • Repetitive avalanche rated • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * Th

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

FEATURES • Ultra low gate charge • Reduced gate drive requirement • Enhanced 30 V VGS rating • Reduced Ciss, Coss, Crss • Extremely high frequency operation • Repetitive avalanche rated • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * Th

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

DESCRIPTION This new series of low charge Power MOSFETs achieve significantly lower gate charge then conventional Power MOSFETs. Utilizing the new LCDMOS (low charge device Power MOSFETs) technology, the device improvements are achieved without added product cost, allowing for reduced gate drive

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

DESCRIPTION This new series of low charge Power MOSFETs achieve significantly lower gate charge then conventional Power MOSFETs. Utilizing the new LCDMOS (low charge device Power MOSFETs) technology, the device improvements are achieved without added product cost, allowing for reduced gate drive

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

DESCRIPTION This new series of low charge Power MOSFETs achieve significantly lower gate charge then conventional Power MOSFETs. Utilizing the new LCDMOS (low charge device Power MOSFETs) technology, the device improvements are achieved without added product cost, allowing for reduced gate drive

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

文件:157.63 Kbytes Page:8 Pages

VISHAYVishay Siliconix

威世威世科技公司

isc N-Channel MOSFET Transistor

文件:319.07 Kbytes Page:2 Pages

ISC

无锡固电

Power MOSFET

文件:157.63 Kbytes Page:8 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

文件:156.42 Kbytes Page:2 Pages

TEL

Power MOSFET(Vdss=500V, Rds(on)=0.85ohm, Id=8.0A)

INFINEON

英飞凌

Power MOSFET

文件:231.4 Kbytes Page:10 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

文件:157.63 Kbytes Page:8 Pages

VISHAYVishay Siliconix

威世威世科技公司

HEXFET Power MOSFET

文件:993.4 Kbytes Page:8 Pages

IRF

Power MOSFET

文件:157.63 Kbytes Page:8 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

文件:156.42 Kbytes Page:2 Pages

TEL

Power MOSFET

文件:231.4 Kbytes Page:10 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

文件:231.4 Kbytes Page:10 Pages

VISHAYVishay Siliconix

威世威世科技公司

N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR

MOTOROLA

摩托罗拉

ULTRAFAST RECTIFIERS 8 AMPERES 200-400-600 VOLTS

. . . designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • Ultrafast 25, 50 and 75 Nanosecond Recovery Time • 175°C Operating Junction Temperature • Popular TO–220 Package • Epoxy Meets U

MOTOROLA

摩托罗拉

ULTRAFAST RECTIFIER 8.0 AMPERES 400 VOLTS

. . . designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • Ultrafast 28 Nanosecond Recovery Time • 175°C Operating Junction Temperature • Popular TO–220 Package • Epoxy Meets UL94, VO @ 1/8″ • High T

MOTOROLA

摩托罗拉

RF POWER TRANSISTOR NPN SILICON

文件:91.92 Kbytes Page:4 Pages

MOTOROLA

摩托罗拉

ULTRAFAST RECTIFIER 8.0 AMPERES 400 VOLTS

文件:107.56 Kbytes Page:6 Pages

MOTOROLA

摩托罗拉

IRF840L产品属性

  • 类型

    描述

  • 型号

    IRF840L

  • 功能描述

    MOSFET N-Chan 500V 8.0 Amp

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2026-8-4 15:22:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
24+
TO-263
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
VISHAY
2018+
26976
代理原装现货/特价热卖!
IRF840LCSTRR
25+
21442
21442
IR
22+
D2-PAK
8000
原装正品支持实单
ir
26+
NA
6980
原装现货,可开13%税票
INTERNATIONA
06+
原厂原装
9016
只做全新原装真实现货供应
VISHAY
20+
na
65790
原装优势主营型号-可开原型号增税票
ir
2023+
原厂封装
50000
原装现货
IR
25+
TO-263
30000
全新原装现货,价格优势
IR
25+23+
TO-263
26984
绝对原装正品全新进口深圳现货

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