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IRF840L价格
参考价格:¥5.5386
型号:IRF840LCLPBF 品牌:Vishay 备注:这里有IRF840L多少钱,2025年最近7天走势,今日出价,今日竞价,IRF840L批发/采购报价,IRF840L行情走势销售排行榜,IRF840L报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
IRF840L | EaseofParalleling 文件:176.79 Kbytes Page:9 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | ||
PowerMOSFET DESCRIPTION ThisnewseriesoflowchargePowerMOSFETsachievesigniticantlylowergatechargeoverconventionalMOSFETs.UtilizingthenewLCDMOStechnology,thedeviceimprovementsareachievedwithoutaddedproductcost,allowingforreducedgatedriverequirementsandtotalsystemsavings.I | VishayVishay Siliconix 威世科技威世科技半导体 | |||
PowerMOSFET(Vdss=500V,Rds(on)=0.85ohm,Id=8.0A) Description ThisnewseriesoflowchargeHEXFET®powerMOSFETsachievesignificantlowergatechargeoverconventionalMOSFETs.UtilizingthenewLCDMOS(lowchargedeviceMOSFETs)technology,thedeviceimprovementsareachievedwithoutaddedproductcost,allowingforreducegatedriverequirem | IRF International Rectifier | |||
PowerMOSFET DESCRIPTION ThisnewseriesoflowchargePowerMOSFETsachievesignificantlylowergatechargethenconventionalPowerMOSFETs.UtilizingthenewLCDMOS(lowchargedevicePowerMOSFETs)technology,thedeviceimprovementsareachievedwithoutaddedproductcost,allowingforreducedgatedrive | VishayVishay Siliconix 威世科技威世科技半导体 | |||
PowerMOSFET DESCRIPTION ThisnewseriesoflowchargePowerMOSFETsachievesignificantlylowergatechargethenconventionalPowerMOSFETs.UtilizingthenewLCDMOS(lowchargedevicePowerMOSFETs)technology,thedeviceimprovementsareachievedwithoutaddedproductcost,allowingforreducedgatedrive | VishayVishay Siliconix 威世科技威世科技半导体 | |||
PowerMOSFET FEATURES •Ultralowgatecharge •Reducedgatedriverequirement •Enhanced30VVGSrating •ReducedCiss,Coss,Crss •Extremelyhighfrequencyoperation •Repetitiveavalancherated •Materialcategorization:fordefinitionsof compliancepleaseseewww.vishay.com/doc?99912 Note *Th | VishayVishay Siliconix 威世科技威世科技半导体 | |||
PowerMOSFET DESCRIPTION ThisnewseriesoflowchargePowerMOSFETsachievesignificantlylowergatechargethenconventionalPowerMOSFETs.UtilizingthenewLCDMOS(lowchargedevicePowerMOSFETs)technology,thedeviceimprovementsareachievedwithoutaddedproductcost,allowingforreducedgatedrive | VishayVishay Siliconix 威世科技威世科技半导体 | |||
PowerMOSFET DESCRIPTION ThisnewseriesoflowchargePowerMOSFETsachievesigniticantlylowergatechargeoverconventionalMOSFETs.UtilizingthenewLCDMOStechnology,thedeviceimprovementsareachievedwithoutaddedproductcost,allowingforreducedgatedriverequirementsandtotalsystemsavings.I | VishayVishay Siliconix 威世科技威世科技半导体 | |||
PowerMOSFET(Vdss=500V,Rds(on)=0.85ohm,Id=8.0A) Description ThisnewseriesoflowchargeHEXFET®powerMOSFETsachievesignificantlowergatechargeoverconventionalMOSFETs.UtilizingthenewLCDMOS(lowchargedeviceMOSFETs)technology,thedeviceimprovementsareachievedwithoutaddedproductcost,allowingforreducegatedriverequirem | IRF International Rectifier | |||
PowerMOSFET DESCRIPTION ThisnewseriesoflowchargePowerMOSFETsachievesignificantlylowergatechargethenconventionalPowerMOSFETs.UtilizingthenewLCDMOS(lowchargedevicePowerMOSFETs)technology,thedeviceimprovementsareachievedwithoutaddedproductcost,allowingforreducedgatedrive | VishayVishay Siliconix 威世科技威世科技半导体 | |||
PowerMOSFET FEATURES •Ultralowgatecharge •Reducedgatedriverequirement •Enhanced30VVGSrating •ReducedCiss,Coss,Crss •Extremelyhighfrequencyoperation •Repetitiveavalancherated •Materialcategorization:fordefinitionsof compliancepleaseseewww.vishay.com/doc?99912 Note *Th | VishayVishay Siliconix 威世科技威世科技半导体 | |||
PowerMOSFET DESCRIPTION ThisnewseriesoflowchargePowerMOSFETsachievesignificantlylowergatechargethenconventionalPowerMOSFETs.UtilizingthenewLCDMOS(lowchargedevicePowerMOSFETs)technology,thedeviceimprovementsareachievedwithoutaddedproductcost,allowingforreducedgatedrive | VishayVishay Siliconix 威世科技威世科技半导体 | |||
PowerMOSFET FEATURES •Ultralowgatecharge •Reducedgatedriverequirement •Enhanced30VVGSrating •ReducedCiss,Coss,Crss •Extremelyhighfrequencyoperation •Repetitiveavalancherated •Materialcategorization:fordefinitionsof compliancepleaseseewww.vishay.com/doc?99912 Note *Th | VishayVishay Siliconix 威世科技威世科技半导体 | |||
PowerMOSFET DESCRIPTION ThisnewseriesoflowchargePowerMOSFETsachievesignificantlylowergatechargethenconventionalPowerMOSFETs.UtilizingthenewLCDMOS(lowchargedevicePowerMOSFETs)technology,thedeviceimprovementsareachievedwithoutaddedproductcost,allowingforreducedgatedrive | VishayVishay Siliconix 威世科技威世科技半导体 | |||
PowerMOSFET DESCRIPTION ThisnewseriesoflowchargePowerMOSFETsachievesignificantlylowergatechargethenconventionalPowerMOSFETs.UtilizingthenewLCDMOS(lowchargedevicePowerMOSFETs)technology,thedeviceimprovementsareachievedwithoutaddedproductcost,allowingforreducedgatedrive | VishayVishay Siliconix 威世科技威世科技半导体 | |||
PowerMOSFET DESCRIPTION ThisnewseriesoflowchargePowerMOSFETsachievesignificantlylowergatechargethenconventionalPowerMOSFETs.UtilizingthenewLCDMOS(lowchargedevicePowerMOSFETs)technology,thedeviceimprovementsareachievedwithoutaddedproductcost,allowingforreducedgatedrive | VishayVishay Siliconix 威世科技威世科技半导体 | |||
iscN-ChannelMOSFETTransistor 文件:319.07 Kbytes Page:2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
PowerMOSFET 文件:157.63 Kbytes Page:8 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | |||
PowerMOSFET 文件:157.63 Kbytes Page:8 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | |||
PowerMOSFET 文件:156.42 Kbytes Page:2 Pages | TELTokyo Electron Ltd. 东电电子东京电子有限公司 | |||
PowerMOSFET 文件:231.4 Kbytes Page:10 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | |||
PowerMOSFET 文件:157.63 Kbytes Page:8 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | |||
HEXFETPowerMOSFET 文件:993.4 Kbytes Page:8 Pages | IRF International Rectifier | |||
PowerMOSFET 文件:157.63 Kbytes Page:8 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | |||
PowerMOSFET 文件:156.42 Kbytes Page:2 Pages | TELTokyo Electron Ltd. 东电电子东京电子有限公司 | |||
PowerMOSFET 文件:231.4 Kbytes Page:10 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | |||
PowerMOSFET 文件:231.4 Kbytes Page:10 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | |||
SurfaceMountZenerDiodes Features ●latHandlingSurfaceforAccuratePlacement ●tandardZenerBreakdownVoltageRange-3.3Vto68V ●owProfilePackage | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | |||
8A500VN-channelEnhancementModePowerMOSFET 文件:1.63311 Mbytes Page:12 Pages | WXDHJiangsu Donghai Semiconductor Technology Co.,Ltd 东海半导体江苏东海半导体股份有限公司 | |||
9Amps竊?00VN-CHANNELMOSFET 文件:122.87 Kbytes Page:5 Pages | KIAKIA Semiconductor Technology 可易亚半导体广东可易亚半导体科技有限公司 | |||
8A竊?00VN-CHANNELMOSFET 文件:215.89 Kbytes Page:6 Pages | KIAKIA Semiconductor Technology 可易亚半导体广东可易亚半导体科技有限公司 | |||
8A500VN-CHANNELMOSFET 文件:242.9 Kbytes Page:7 Pages | KIAKIA Semiconductor Technology 可易亚半导体广东可易亚半导体科技有限公司 |
IRF840L产品属性
- 类型
描述
- 型号
IRF840L
- 功能描述
MOSFET N-Chan 500V 8.0 Amp
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS(导通)
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
VISHAY/威世 |
2022+ |
TO-220 |
30000 |
进口原装现货供应,原装 假一罚十 |
|||
IR |
2016+ |
TO-262 |
6528 |
房间原装进口现货假一赔十 |
|||
VISHAY |
2024+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
|||
VISHAY/威世 |
24+ |
TO-220AB |
426 |
原厂授权代理 价格绝对优势 |
|||
IR |
24+ |
TO-262 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
IR |
2015+ |
TO-220AB |
12500 |
全新原装,现货库存长期供应 |
|||
IR |
23+ |
TO-262 |
8000 |
只做原装现货 |
|||
SHARP/夏普 |
23+ |
DIP-3 |
69820 |
终端可以免费供样,支持BOM配单! |
|||
IR |
1923+ |
TO-262 |
6896 |
原装进口现货库存专业工厂研究所配单供货 |
|||
Vishay(威世) |
2249+ |
Tube |
60815 |
二十余载金牌老企 研究所优秀合供单位 您的原厂窗口 |
IRF840L规格书下载地址
IRF840L参数引脚图相关
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- IRF840I
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- IRF840B
- IRF840ASTRRPBF
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IRF840L数据表相关新闻
IRF9317TRPBF
原装
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原厂很远现货很近坚持每一片芯片都来自原厂及授权渠道
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2018-12-28
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