型号 功能描述 生产厂家 企业 LOGO 操作

N-Channel Application-Specific MOSFETs

Description This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced conduction and switching losses make it ideal for high efficiency DC-DC converters that power the latest generation of microprocessors. •

IRF

2.7 V to 5.5 V, 350 kSPS, 10-Bit 4-/8-Channel Sampling ADCs

GENERAL DESCRIPTION The AD7811 and AD7812 are high speed, low power, 10-bit A/D converters that operate from a single 2.7 V to 5.5 V supply. The devices contain a 2.3 µs successive approximation A/D converter, an on-chip track/hold amplifier, a 2.5 V on-chip reference and a high speed serial inte

AD

亚德诺

2.7 V to 5.5 V, 350 kSPS, 10-Bit 4-/8-Channel Sampling ADCs

GENERAL DESCRIPTION The AD7811 and AD7812 are high speed, low power, 10-bit A/D converters that operate from a single 2.7 V to 5.5 V supply. The devices contain a 2.3 µs successive approximation A/D converter, an on-chip track/hold amplifier, a 2.5 V on-chip reference and a high speed serial inte

AD

亚德诺

2.7 V to 5.5 V, 350 kSPS, 10-Bit 4-/8-Channel Sampling ADCs

GENERAL DESCRIPTION The AD7811 and AD7812 are high speed, low power, 10-bit A/D converters that operate from a single 2.7 V to 5.5 V supply. The devices contain a 2.3 µs successive approximation A/D converter, an on-chip track/hold amplifier, a 2.5 V on-chip reference and a high speed serial inte

AD

亚德诺

2.7 V to 5.5 V, 350 kSPS, 10-Bit 4-/8-Channel Sampling ADCs

GENERAL DESCRIPTION The AD7811 and AD7812 are high speed, low power, 10-bit A/D converters that operate from a single 2.7 V to 5.5 V supply. The devices contain a 2.3 µs successive approximation A/D converter, an on-chip track/hold amplifier, a 2.5 V on-chip reference and a high speed serial inte

AD

亚德诺

2.7 V to 5.5 V, 350 kSPS, 10-Bit 4-/8-Channel Sampling ADCs

文件:211.68 Kbytes Page:19 Pages

AD

亚德诺

IRF7811WG产品属性

  • 类型

    描述

  • 型号

    IRF7811WG

  • 功能描述

    MOSFET N-CH 30V 14A 8-SOIC

  • RoHS

  • 类别

    分离式半导体产品 >> FET - 单

  • 系列

    HEXFET®

  • 标准包装

    1,000

  • 系列

    MESH OVERLAY™ FET

  • MOSFET N 通道,金属氧化物 FET

  • 特点

    逻辑电平门

  • 漏极至源极电压(Vdss)

    200V 电流 - 连续漏极(Id) @ 25°

  • C

    18A 开态Rds(最大)@ Id, Vgs @ 25°

  • C

    180 毫欧 @ 9A,10V Id 时的

  • Vgs(th)(最大)

    4V @ 250µA 闸电荷(Qg) @

  • Vgs

    72nC @ 10V 输入电容(Ciss) @

  • Vds

    1560pF @ 25V 功率 -

  • 最大

    40W

  • 安装类型

    通孔

  • 封装/外壳

    TO-220-3 整包

  • 供应商设备封装

    TO-220FP

  • 包装

    管件

更新时间:2025-11-3 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
24+
NA/
5250
原装现货,当天可交货,原型号开票
IR
2016+
SOP8
2473
只做原装,假一罚十,公司可开17%增值税发票!
IR
24+
SOP8
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
IR
11+
SO-8
2000
Infineon Technologies
21+
8-SO
4000
100%进口原装!长期供应!绝对优势价格(诚信经营)!
IR
22+
SOP-8
8000
原装正品支持实单
IR
25+
PLCC44
18000
原厂直接发货进口原装
IOR
24+
SOP8
4500
IR
17+
SO-8
6200
100%原装正品现货
IR
24+
SO-8
9000
只做原装,欢迎询价,量大价优

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