IRF7807价格
参考价格:¥2.7789
型号:IRF7807APBF 品牌:IR 备注:这里有IRF7807多少钱,2026年最近7天走势,今日出价,今日竞价,IRF7807批发/采购报价,IRF7807行情走势销售排行榜,IRF7807报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRF7807 | 丝印代码:IRF7807;Control FET for Notebook Processor Power Features Applications Control FET for Notebook Processor Power Synchronous Rectifier MOSFET for Graphics Cards and POL Converters in Networking and Telecommunication Systems VDS (V) = 30V RDS(ON) 13.8m (VGS = 10V) RDS(ON) 18.2m (VGS = 4.5V) | UMW 友台半导体 | ||
丝印代码:IRF7807;Control FET for Notebook Processor Power Features Applications Control FET for Notebook Processor Power Synchronous Rectifier MOSFET for Graphics Cards and POL Converters in Networking and Telecommunication Systems VDS (V) = 30V RDS(ON) 13.8m (VGS = 10V) RDS(ON) 18.2m (VGS = 4.5V) | UMW 友台半导体 | |||
丝印代码:IRF7807;MOSFET Features VDS (V) = 30V RDS(ON) | EVVOSEMI 翊欧 | |||
IRF7807 | 采用 SO-8 封装的 30V 单 N 通道 HEXFET 功率 MOSFET \n优势:\n• 符合 RoHS\n• 具有业内先进的品质\n• 低开关耗能\n• 低通态损耗; | INFINEON 英飞凌 | ||
IRF7807 | MOSFET Features VDS (V) = 30V RDS(ON) | EVVOSEMI 翊欧 | ||
IRF7807 | LM2655 2.5A High Efficiency Synchronous Switching Regulator General Description The LM2655 is a current-mode controlled PWM step-down switching regulator. It has the unique ability to operate in synchronous or asynchronous mode. This gives the designer flexibility to choose between the high efficiency of synchronous operation, or the low solution cost | TI 德州仪器 | ||
IRF7807 | Chip-Set for DC-DC Converters Description These new devices employ advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced conduction and switching losses make them ideal for high efficiency DC-DC Converters that power the latest generation of mobile microproce | IRF | ||
Chip-Set for DC-DC Converters Description These new devices employ advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced conduction and switching losses make them ideal for high efficiency DC-DC Converters that power the latest generation of mobile microproce | IRF | |||
MOSFET / SCHOTTKY DIODE Description The FETKY™ family of Co-Pack HEXFETMOSFETs and Schottky diodes offers the designer an innovative, board space saving solution for switching regulator and power management applications. HEXFET power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance | IRF | |||
FETKY MOSFET / SCHOTTKY DIODE Description The FETKY™ family of Co-Pack HEXFET® MOSFETs and Schottky diodes offers the designer an innovative, board space saving solution for switching regulator and power management applications. HEXFET power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance | IRF | |||
MOSFET / SCHOTTKY DIODE Description The FETKY™ family of Co-Pack HEXFET® MOSFETs and Schottky diodes offers the designer an innovative, board space saving solution for switching regulator and power management applications. HEXFET power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance | IRF | |||
N Channel Application Specific MOSFET Description This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduction of conduction and switching losses makes it ideal for high efficiency DC-DC Converters that power the latest generation of mobile micropr | IRF | |||
FETKY??MOSFET / SCHOTTKY DIODE Description The FETKY™ family of Co-Pack HEXFETMOSFETs and Schottky diodes offers the designer an innovative, board space saving solution for switching regulator and power management applications. HEXFET power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance | IRF | |||
HEXFET Power MOSFET Description The FETKY™ family of Co-Pack HEXFET® MOSFETs and Schottky diodes offers the designer an innovative, board space saving solution for switching regulator and power management applications. HEXFET power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance | IRF | |||
HEXFET Power MOSFET Description The FETKY™ family of Co-Pack HEXFET® MOSFETs and Schottky diodes offers the designer an innovative, board space saving solution for switching regulator and power management applications. HEXFET power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance | IRF | |||
FETKY??MOSFET / SCHOTTKY DIODE Description The FETKY™ family of Co-Pack HEXFETMOSFETs and Schottky diodes offers the designer an innovative, board space saving solution for switching regulator and power management applications. HEXFET power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance | IRF | |||
FETKY MOSFET / SCHOTTKY DIODE Description The FETKY™ family of Co-Pack HEXFET® MOSFETs and Schottky diodes offers the designer an innovative, board space saving solution for switching regulator and power management applications. HEXFET power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance | IRF | |||
Co-Pack N-channel HEXFET짰 Power MOSFET and Schottky Diode Description The FETKY™ family of Co-Pack HEXFET® MOSFETs and Schottky diodes offers the designer an innovative, board space saving solution for switching regulator and power management applications. HEXFET power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance | IRF | |||
Co-Pack N-channel HEXFET짰 Power MOSFET and Schottky Diode Description The FETKY™ family of Co-Pack HEXFET® MOSFETs and Schottky diodes offers the designer an innovative, board space saving solution for switching regulator and power management applications. HEXFET power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance | IRF | |||
HEXFET짰 Power MOSFET Description This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduction of conduction and switching losses makes it ideal for high efficiency DC-DC Converters that power the latest generation of mobile micropr | IRF | |||
HEXFET Power MOSFET Benefits ● Very Low RDS(on) at 4.5V VGS ● Ultra-Low Gate Impedance ● Fully Characterized Avalanche Voltage and Current ● 100 Tested for RG Applications ● Control FET for Notebook Processor Power ● Synchronous Rectifier MOSFET for Graphics Cards and POL Converters in Networking a | IRF | |||
Control FET for Notebook Processor Power Benefits ● Very Low RDS(on) at 4.5V VGS ● Ultra-Low Gate Impedance ● Fully Characterized Avalanche Voltage and Current ● 100 Tested for RG Applications ● Control FET for Notebook Processor Power ● Synchronous Rectifier MOSFET for Graphics Cards and POL Converters in Networking a | IRF | |||
Control FET for Notebook Processor Power Benefits ● Very Low RDS(on) at 4.5V VGS ● Ultra-Low Gate Impedance ● Fully Characterized Avalanche Voltage and Current ● 100 Tested for RG Applications ● Control FET for Notebook Processor Power ● Synchronous Rectifier MOSFET for Graphics Cards and POL Converters in Networking a | IRF | |||
N-Channel Enhancement Mode Power MOSFET Features VDS= 20V, ID= 10 A RDS(ON) | BYCHIP 百域芯 | |||
HEXFET짰 Chip-Set for DC-DC Converters 文件:203.37 Kbytes Page:8 Pages | IRF | |||
N-Channel 20V (D-S) MOSFET 文件:1.05287 Mbytes Page:9 Pages | VBSEMI 微碧半导体 | |||
Low Conduction Losses | INFINEON 英飞凌 | |||
Low Conduction Losses 文件:173.42 Kbytes Page:8 Pages | IRF | |||
Low Conduction Losses 文件:173.42 Kbytes Page:8 Pages | IRF | |||
MOSFET N-CH 30V 8.3A 8-SOIC | INFINEON 英飞凌 | |||
FETKY??MOSFET / SCHOTTKY DIODE 文件:107.73 Kbytes Page:8 Pages | IRF | |||
HEXFET짰 Chip-Set for DC-DC Converters 文件:203.37 Kbytes Page:8 Pages | IRF | |||
N Channel Application Specific MOSFETs 文件:208.68 Kbytes Page:8 Pages | IRF | |||
N Channel Application Specific MOSFETs 文件:208.68 Kbytes Page:8 Pages | IRF | |||
Industry-standard pinout SO-8 Package 文件:262.74 Kbytes Page:9 Pages | IRF | |||
Industry-standard pinout SO-8 Package 文件:262.74 Kbytes Page:9 Pages | IRF | |||
HEXFET짰 Chip-Set for DC-DC Converters 文件:208.68 Kbytes Page:8 Pages | IRF | |||
N Channel Application Specific MOSFET 文件:112.78 Kbytes Page:8 Pages | IRF | |||
Co-Pack N-channel HEXFET Power MOSFET and Schottky Diode 文件:135 Kbytes Page:9 Pages | IRF | |||
LOW CONDUCTION LOSSES 文件:1.15469 Mbytes Page:9 Pages | IRF | |||
LOW CONDUCTION LOSSES 文件:1.15469 Mbytes Page:9 Pages | IRF | |||
Industry-standard pinout SO-8 Package 文件:238.95 Kbytes Page:9 Pages | IRF | |||
Industry-standard pinout SO-8 Package 文件:238.95 Kbytes Page:9 Pages | IRF | |||
Co-Pack N-channel HEXFET Power MOSFET and Schottky Diode 文件:135 Kbytes Page:9 Pages | IRF | |||
Co-Pack N-channel HEXFET Power MOSFET and schottky diode 文件:1.15469 Mbytes Page:9 Pages | IRF | |||
N Channel Application Specific MOSFET 文件:197.71 Kbytes Page:8 Pages | IRF | |||
N Channel Application Specific MOSFET 文件:197.71 Kbytes Page:8 Pages | IRF | |||
N Channel Application Specific MOSFET 文件:197.71 Kbytes Page:8 Pages | IRF | |||
Industry-standard pinout SO-8 Package 文件:218.75 Kbytes Page:9 Pages | IRF | |||
Industry-standard pinout SO-8 Package 文件:218.75 Kbytes Page:9 Pages | IRF | |||
N Channel Application Specific MOSFET 文件:112.78 Kbytes Page:8 Pages | IRF | |||
N Channel Application Specific MOSFET 文件:197.71 Kbytes Page:8 Pages | IRF | |||
HEXFET Power MOSFET 文件:214.5 Kbytes Page:10 Pages | IRF | |||
Control FET for Notebook Processor Power 文件:220.06 Kbytes Page:10 Pages | IRF | |||
Control FET for Notebook Processor Power 文件:220.06 Kbytes Page:10 Pages | IRF | |||
Control FET for Notebook Processor Power 文件:220.06 Kbytes Page:10 Pages | IRF | |||
Control FET for Notebook Processor Power 文件:220.06 Kbytes Page:10 Pages | IRF | |||
HEXFET Power MOSFET 文件:256.87 Kbytes Page:10 Pages | IRF | |||
Low-Power 16-Bit Sampling CMOS ANALOG-to-DIGITAL CONVERTER 文件:524.21 Kbytes Page:23 Pages | BURR-BROWN | |||
Low-Power 16-Bit Sampling CMOS ANALOG-to-DIGITAL CONVERTER 文件:524.21 Kbytes Page:23 Pages | BURR-BROWN |
IRF7807产品属性
- 类型
描述
- Package :
SO-8
- VDS max:
30.0V
- RDS (on)(@4.5V) max:
25.0mΩ
- Polarity :
N
- ID (@ TA=70°C) max:
6.6A
- ID (@ TA=25°C) max:
8.3A
- Ptot(@ TA=25°C) max:
2.5W
- QG :
12.0nC
- RthJA max:
50.0K/W
- Mounting :
SMD
- VGS max:
12.0V
- Moisture Sensitivity Level :
1
- Qgd :
2.9nC
- Tj max:
150.0°C
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
UMW 友台 |
23+ |
SOP-8 |
78000 |
原装正品,实单请联系 |
|||
IR |
24+ |
SOP8 |
9800 |
一级代理/全新原装现货/长期供应! |
|||
Infineon(英飞凌) |
24+ |
SOP-8 |
31316 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
IR |
25+ |
SOP8 |
32360 |
IR全新特价IRF7807ZTRPBF即刻询购立享优惠#长期有货 |
|||
IR |
2019+ |
SOP8 |
18000 |
原厂渠道 可含税出货 |
|||
INFINEON/英飞凌 |
2025+ |
SO8 |
5000 |
原装进口价格优 请找坤融电子! |
|||
IR |
2023+ |
SOP |
53500 |
正品,原装现货 |
|||
IR |
24+ |
SOP8 |
2500 |
进口原装现货/假一赔十 |
|||
IR |
25+ |
SOP-8 |
20000 |
原装 |
|||
IR |
25+ |
SO-8 |
25000 |
代理原装现货,假一赔十 |
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DdatasheetPDF页码索引
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