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IRF7807价格

参考价格:¥2.7789

型号:IRF7807APBF 品牌:IR 备注:这里有IRF7807多少钱,2026年最近7天走势,今日出价,今日竞价,IRF7807批发/采购报价,IRF7807行情走势销售排行榜,IRF7807报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IRF7807

丝印代码:IRF7807;Control FET for Notebook Processor Power

Features Applications Control FET for Notebook Processor Power Synchronous Rectifier MOSFET for Graphics Cards and POL Converters in Networking and Telecommunication Systems VDS (V) = 30V RDS(ON) 13.8m (VGS = 10V) RDS(ON) 18.2m (VGS = 4.5V)

UMW

友台半导体

丝印代码:IRF7807;Control FET for Notebook Processor Power

Features Applications Control FET for Notebook Processor Power Synchronous Rectifier MOSFET for Graphics Cards and POL Converters in Networking and Telecommunication Systems VDS (V) = 30V RDS(ON) 13.8m (VGS = 10V) RDS(ON) 18.2m (VGS = 4.5V)

UMW

友台半导体

丝印代码:IRF7807;MOSFET

Features VDS (V) = 30V RDS(ON)

EVVOSEMI

翊欧

IRF7807

采用 SO-8 封装的 30V 单 N 通道 HEXFET 功率 MOSFET

\n优势:\n• 符合 RoHS\n• 具有业内先进的品质\n• 低开关耗能\n• 低通态损耗;

INFINEON

英飞凌

IRF7807

MOSFET

Features VDS (V) = 30V RDS(ON)

EVVOSEMI

翊欧

IRF7807

LM2655 2.5A High Efficiency Synchronous Switching Regulator

General Description The LM2655 is a current-mode controlled PWM step-down switching regulator. It has the unique ability to operate in synchronous or asynchronous mode. This gives the designer flexibility to choose between the high efficiency of synchronous operation, or the low solution cost

TI

德州仪器

IRF7807

Chip-Set for DC-DC Converters

Description These new devices employ advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced conduction and switching losses make them ideal for high efficiency DC-DC Converters that power the latest generation of mobile microproce

IRF

Chip-Set for DC-DC Converters

Description These new devices employ advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced conduction and switching losses make them ideal for high efficiency DC-DC Converters that power the latest generation of mobile microproce

IRF

MOSFET / SCHOTTKY DIODE

Description The FETKY™ family of Co-Pack HEXFETMOSFETs and Schottky diodes offers the designer an innovative, board space saving solution for switching regulator and power management applications. HEXFET power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance

IRF

FETKY MOSFET / SCHOTTKY DIODE

Description The FETKY™ family of Co-Pack HEXFET® MOSFETs and Schottky diodes offers the designer an innovative, board space saving solution for switching regulator and power management applications. HEXFET power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance

IRF

MOSFET / SCHOTTKY DIODE

Description The FETKY™ family of Co-Pack HEXFET® MOSFETs and Schottky diodes offers the designer an innovative, board space saving solution for switching regulator and power management applications. HEXFET power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance

IRF

N Channel Application Specific MOSFET

Description This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduction of conduction and switching losses makes it ideal for high efficiency DC-DC Converters that power the latest generation of mobile micropr

IRF

FETKY??MOSFET / SCHOTTKY DIODE

Description The FETKY™ family of Co-Pack HEXFETMOSFETs and Schottky diodes offers the designer an innovative, board space saving solution for switching regulator and power management applications. HEXFET power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance

IRF

HEXFET Power MOSFET

Description The FETKY™ family of Co-Pack HEXFET® MOSFETs and Schottky diodes offers the designer an innovative, board space saving solution for switching regulator and power management applications. HEXFET power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance

IRF

HEXFET Power MOSFET

Description The FETKY™ family of Co-Pack HEXFET® MOSFETs and Schottky diodes offers the designer an innovative, board space saving solution for switching regulator and power management applications. HEXFET power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance

IRF

FETKY??MOSFET / SCHOTTKY DIODE

Description The FETKY™ family of Co-Pack HEXFETMOSFETs and Schottky diodes offers the designer an innovative, board space saving solution for switching regulator and power management applications. HEXFET power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance

IRF

FETKY MOSFET / SCHOTTKY DIODE

Description The FETKY™ family of Co-Pack HEXFET® MOSFETs and Schottky diodes offers the designer an innovative, board space saving solution for switching regulator and power management applications. HEXFET power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance

IRF

Co-Pack N-channel HEXFET짰 Power MOSFET and Schottky Diode

Description The FETKY™ family of Co-Pack HEXFET® MOSFETs and Schottky diodes offers the designer an innovative, board space saving solution for switching regulator and power management applications. HEXFET power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance

IRF

Co-Pack N-channel HEXFET짰 Power MOSFET and Schottky Diode

Description The FETKY™ family of Co-Pack HEXFET® MOSFETs and Schottky diodes offers the designer an innovative, board space saving solution for switching regulator and power management applications. HEXFET power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance

IRF

HEXFET짰 Power MOSFET

Description This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduction of conduction and switching losses makes it ideal for high efficiency DC-DC Converters that power the latest generation of mobile micropr

IRF

HEXFET Power MOSFET

Benefits ● Very Low RDS(on) at 4.5V VGS ● Ultra-Low Gate Impedance ● Fully Characterized Avalanche Voltage and Current ● 100 Tested for RG Applications ● Control FET for Notebook Processor Power ● Synchronous Rectifier MOSFET for Graphics Cards and POL Converters in Networking a

IRF

Control FET for Notebook Processor Power

Benefits ● Very Low RDS(on) at 4.5V VGS ● Ultra-Low Gate Impedance ● Fully Characterized Avalanche Voltage and Current ● 100 Tested for RG Applications ● Control FET for Notebook Processor Power ● Synchronous Rectifier MOSFET for Graphics Cards and POL Converters in Networking a

IRF

Control FET for Notebook Processor Power

Benefits ● Very Low RDS(on) at 4.5V VGS ● Ultra-Low Gate Impedance ● Fully Characterized Avalanche Voltage and Current ● 100 Tested for RG Applications ● Control FET for Notebook Processor Power ● Synchronous Rectifier MOSFET for Graphics Cards and POL Converters in Networking a

IRF

N-Channel Enhancement Mode Power MOSFET

Features  VDS= 20V, ID= 10 A RDS(ON)

BYCHIP

百域芯

HEXFET짰 Chip-Set for DC-DC Converters

文件:203.37 Kbytes Page:8 Pages

IRF

N-Channel 20V (D-S) MOSFET

文件:1.05287 Mbytes Page:9 Pages

VBSEMI

微碧半导体

Low Conduction Losses

INFINEON

英飞凌

Low Conduction Losses

文件:173.42 Kbytes Page:8 Pages

IRF

Low Conduction Losses

文件:173.42 Kbytes Page:8 Pages

IRF

MOSFET N-CH 30V 8.3A 8-SOIC

INFINEON

英飞凌

FETKY??MOSFET / SCHOTTKY DIODE

文件:107.73 Kbytes Page:8 Pages

IRF

HEXFET짰 Chip-Set for DC-DC Converters

文件:203.37 Kbytes Page:8 Pages

IRF

N Channel Application Specific MOSFETs

文件:208.68 Kbytes Page:8 Pages

IRF

N Channel Application Specific MOSFETs

文件:208.68 Kbytes Page:8 Pages

IRF

Industry-standard pinout SO-8 Package

文件:262.74 Kbytes Page:9 Pages

IRF

Industry-standard pinout SO-8 Package

文件:262.74 Kbytes Page:9 Pages

IRF

HEXFET짰 Chip-Set for DC-DC Converters

文件:208.68 Kbytes Page:8 Pages

IRF

N Channel Application Specific MOSFET

文件:112.78 Kbytes Page:8 Pages

IRF

Co-Pack N-channel HEXFET Power MOSFET and Schottky Diode

文件:135 Kbytes Page:9 Pages

IRF

LOW CONDUCTION LOSSES

文件:1.15469 Mbytes Page:9 Pages

IRF

LOW CONDUCTION LOSSES

文件:1.15469 Mbytes Page:9 Pages

IRF

Industry-standard pinout SO-8 Package

文件:238.95 Kbytes Page:9 Pages

IRF

Industry-standard pinout SO-8 Package

文件:238.95 Kbytes Page:9 Pages

IRF

Co-Pack N-channel HEXFET Power MOSFET and Schottky Diode

文件:135 Kbytes Page:9 Pages

IRF

Co-Pack N-channel HEXFET Power MOSFET and schottky diode

文件:1.15469 Mbytes Page:9 Pages

IRF

N Channel Application Specific MOSFET

文件:197.71 Kbytes Page:8 Pages

IRF

N Channel Application Specific MOSFET

文件:197.71 Kbytes Page:8 Pages

IRF

N Channel Application Specific MOSFET

文件:197.71 Kbytes Page:8 Pages

IRF

Industry-standard pinout SO-8 Package

文件:218.75 Kbytes Page:9 Pages

IRF

Industry-standard pinout SO-8 Package

文件:218.75 Kbytes Page:9 Pages

IRF

N Channel Application Specific MOSFET

文件:112.78 Kbytes Page:8 Pages

IRF

N Channel Application Specific MOSFET

文件:197.71 Kbytes Page:8 Pages

IRF

HEXFET Power MOSFET

文件:214.5 Kbytes Page:10 Pages

IRF

Control FET for Notebook Processor Power

文件:220.06 Kbytes Page:10 Pages

IRF

Control FET for Notebook Processor Power

文件:220.06 Kbytes Page:10 Pages

IRF

Control FET for Notebook Processor Power

文件:220.06 Kbytes Page:10 Pages

IRF

Control FET for Notebook Processor Power

文件:220.06 Kbytes Page:10 Pages

IRF

HEXFET Power MOSFET

文件:256.87 Kbytes Page:10 Pages

IRF

Low-Power 16-Bit Sampling CMOS ANALOG-to-DIGITAL CONVERTER

文件:524.21 Kbytes Page:23 Pages

BURR-BROWN

Low-Power 16-Bit Sampling CMOS ANALOG-to-DIGITAL CONVERTER

文件:524.21 Kbytes Page:23 Pages

BURR-BROWN

IRF7807产品属性

  • 类型

    描述

  • Package :

    SO-8

  • VDS max:

    30.0V

  • RDS (on)(@4.5V) max:

    25.0mΩ

  • Polarity :

    N

  • ID (@ TA=70°C) max:

    6.6A

  • ID (@ TA=25°C) max:

    8.3A

  • Ptot(@ TA=25°C) max:

    2.5W

  • QG :

    12.0nC 

  • RthJA max:

    50.0K/W

  • Mounting :

    SMD

  • VGS max:

    12.0V

  • Moisture Sensitivity Level :

    1

  • Qgd :

    2.9nC 

  • Tj max:

    150.0°C

更新时间:2026-8-4 15:43:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
UMW 友台
23+
SOP-8
78000
原装正品,实单请联系
IR
24+
SOP8
9800
一级代理/全新原装现货/长期供应!
Infineon(英飞凌)
24+
SOP-8
31316
正规渠道,免费送样。支持账期,BOM一站式配齐
IR
25+
SOP8
32360
IR全新特价IRF7807ZTRPBF即刻询购立享优惠#长期有货
IR
2019+
SOP8
18000
原厂渠道 可含税出货
INFINEON/英飞凌
2025+
SO8
5000
原装进口价格优 请找坤融电子!
IR
2023+
SOP
53500
正品,原装现货
IR
24+
SOP8
2500
进口原装现货/假一赔十
IR
25+
SOP-8
20000
原装
IR
25+
SO-8
25000
代理原装现货,假一赔十

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