Chip-Set for DC-DC Converters

Description These new devices employ advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced conduction and switching losses make them ideal for high efficiency DC-DC Converters that power the latest generation of mobile microproce

Control FET for Notebook Processor Power

Features Applications Control FET for Notebook Processor Power Synchronous Rectifier MOSFET for Graphics Cards and POL Converters in Networking and Telecommunication Systems VDS (V) = 30V RDS(ON) 13.8m (VGS = 10V) RDS(ON) 18.2m (VGS = 4.5V)

MOSFET

Features VDS (V) = 30V RDS(ON)

LM2655 2.5A High Efficiency Synchronous Switching Regulator

General Description The LM2655 is a current-mode controlled PWM step-down switching regulator. It has the unique ability to operate in synchronous or asynchronous mode. This gives the designer flexibility to choose between the high efficiency of synchronous operation, or the low solution cost

采用 SO-8 封装的 30V 单 N 通道 HEXFET 功率 MOSFET

Chip-Set for DC-DC Converters

Description These new devices employ advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced conduction and switching losses make them ideal for high efficiency DC-DC Converters that power the latest generation of mobile microproce

MOSFET / SCHOTTKY DIODE

Description The FETKY™ family of Co-Pack HEXFETMOSFETs and Schottky diodes offers the designer an innovative, board space saving solution for switching regulator and power management applications. HEXFET power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance

FETKY MOSFET / SCHOTTKY DIODE

Description The FETKY™ family of Co-Pack HEXFET® MOSFETs and Schottky diodes offers the designer an innovative, board space saving solution for switching regulator and power management applications. HEXFET power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance

MOSFET / SCHOTTKY DIODE

Description The FETKY™ family of Co-Pack HEXFET® MOSFETs and Schottky diodes offers the designer an innovative, board space saving solution for switching regulator and power management applications. HEXFET power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance

MOSFET

Features VDS (V) = 30V RDS(ON)

Control FET for Notebook Processor Power

Features Applications Control FET for Notebook Processor Power Synchronous Rectifier MOSFET for Graphics Cards and POL Converters in Networking and Telecommunication Systems VDS (V) = 30V RDS(ON) 13.8m (VGS = 10V) RDS(ON) 18.2m (VGS = 4.5V)

N Channel Application Specific MOSFET

Description This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduction of conduction and switching losses makes it ideal for high efficiency DC-DC Converters that power the latest generation of mobile micropr

FETKY??MOSFET / SCHOTTKY DIODE

Description The FETKY™ family of Co-Pack HEXFETMOSFETs and Schottky diodes offers the designer an innovative, board space saving solution for switching regulator and power management applications. HEXFET power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance

HEXFET Power MOSFET

Description The FETKY™ family of Co-Pack HEXFET® MOSFETs and Schottky diodes offers the designer an innovative, board space saving solution for switching regulator and power management applications. HEXFET power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance

HEXFET Power MOSFET

Description The FETKY™ family of Co-Pack HEXFET® MOSFETs and Schottky diodes offers the designer an innovative, board space saving solution for switching regulator and power management applications. HEXFET power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance

FETKY??MOSFET / SCHOTTKY DIODE

Description The FETKY™ family of Co-Pack HEXFETMOSFETs and Schottky diodes offers the designer an innovative, board space saving solution for switching regulator and power management applications. HEXFET power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance

FETKY MOSFET / SCHOTTKY DIODE

Description The FETKY™ family of Co-Pack HEXFET® MOSFETs and Schottky diodes offers the designer an innovative, board space saving solution for switching regulator and power management applications. HEXFET power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance

Co-Pack N-channel HEXFET짰 Power MOSFET and Schottky Diode

Description The FETKY™ family of Co-Pack HEXFET® MOSFETs and Schottky diodes offers the designer an innovative, board space saving solution for switching regulator and power management applications. HEXFET power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance

Co-Pack N-channel HEXFET짰 Power MOSFET and Schottky Diode

Description The FETKY™ family of Co-Pack HEXFET® MOSFETs and Schottky diodes offers the designer an innovative, board space saving solution for switching regulator and power management applications. HEXFET power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance

HEXFET짰 Power MOSFET

Description This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduction of conduction and switching losses makes it ideal for high efficiency DC-DC Converters that power the latest generation of mobile micropr

HEXFET Power MOSFET

Benefits ● Very Low RDS(on) at 4.5V VGS ● Ultra-Low Gate Impedance ● Fully Characterized Avalanche Voltage and Current ● 100 Tested for RG Applications ● Control FET for Notebook Processor Power ● Synchronous Rectifier MOSFET for Graphics Cards and POL Converters in Networking a

Control FET for Notebook Processor Power

Benefits ● Very Low RDS(on) at 4.5V VGS ● Ultra-Low Gate Impedance ● Fully Characterized Avalanche Voltage and Current ● 100 Tested for RG Applications ● Control FET for Notebook Processor Power ● Synchronous Rectifier MOSFET for Graphics Cards and POL Converters in Networking a

Control FET for Notebook Processor Power

Benefits ● Very Low RDS(on) at 4.5V VGS ● Ultra-Low Gate Impedance ● Fully Characterized Avalanche Voltage and Current ● 100 Tested for RG Applications ● Control FET for Notebook Processor Power ● Synchronous Rectifier MOSFET for Graphics Cards and POL Converters in Networking a

N-Channel Enhancement Mode Power MOSFET

Features  VDS= 20V, ID= 10 A RDS(ON)

HEXFET짰 Chip-Set for DC-DC Converters

文件：203.37 Kbytes Page：8 Pages

N-Channel 20V (D-S) MOSFET

文件：1.05287 Mbytes Page：9 Pages

Low Conduction Losses

Low Conduction Losses

文件：173.42 Kbytes Page：8 Pages

Low Conduction Losses

文件：173.42 Kbytes Page：8 Pages

MOSFET N-CH 30V 8.3A 8-SOIC

FETKY??MOSFET / SCHOTTKY DIODE

文件：107.73 Kbytes Page：8 Pages

N Channel Application Specific MOSFETs

文件：208.68 Kbytes Page：8 Pages

HEXFET짰 Chip-Set for DC-DC Converters

文件：203.37 Kbytes Page：8 Pages

N Channel Application Specific MOSFETs

文件：208.68 Kbytes Page：8 Pages

Industry-standard pinout SO-8 Package

文件：262.74 Kbytes Page：9 Pages

Industry-standard pinout SO-8 Package

文件：262.74 Kbytes Page：9 Pages

HEXFET짰 Chip-Set for DC-DC Converters

文件：208.68 Kbytes Page：8 Pages

N Channel Application Specific MOSFET

文件：112.78 Kbytes Page：8 Pages

Co-Pack N-channel HEXFET Power MOSFET and Schottky Diode

文件：135 Kbytes Page：9 Pages

LOW CONDUCTION LOSSES

文件：1.15469 Mbytes Page：9 Pages

LOW CONDUCTION LOSSES

文件：1.15469 Mbytes Page：9 Pages

Industry-standard pinout SO-8 Package

文件：238.95 Kbytes Page：9 Pages

Industry-standard pinout SO-8 Package

文件：238.95 Kbytes Page：9 Pages

Co-Pack N-channel HEXFET Power MOSFET and Schottky Diode

文件：135 Kbytes Page：9 Pages

Co-Pack N-channel HEXFET Power MOSFET and schottky diode

文件：1.15469 Mbytes Page：9 Pages

N Channel Application Specific MOSFET

文件：197.71 Kbytes Page：8 Pages

N Channel Application Specific MOSFET

文件：197.71 Kbytes Page：8 Pages

N Channel Application Specific MOSFET

文件：197.71 Kbytes Page：8 Pages

Industry-standard pinout SO-8 Package

文件：218.75 Kbytes Page：9 Pages

Industry-standard pinout SO-8 Package

文件：218.75 Kbytes Page：9 Pages

N Channel Application Specific MOSFET

文件：112.78 Kbytes Page：8 Pages

N Channel Application Specific MOSFET

文件：197.71 Kbytes Page：8 Pages

HEXFET Power MOSFET

文件：214.5 Kbytes Page：10 Pages

Control FET for Notebook Processor Power

文件：220.06 Kbytes Page：10 Pages

Control FET for Notebook Processor Power

文件：220.06 Kbytes Page：10 Pages

Control FET for Notebook Processor Power

文件：220.06 Kbytes Page：10 Pages

Control FET for Notebook Processor Power

文件：220.06 Kbytes Page：10 Pages

HEXFET Power MOSFET

文件：256.87 Kbytes Page：10 Pages

50 Ohm Wireless Transmission Coax, RF 200, RG58, 17 AWG Solid BC, Foil 95% TC Braid, PE Jkt

Product Description 50 Ohm Wireless Transmission Coax, RF 200, RG58, 17 AWG Solid Bare Copper Conductor, PE Insulation, Duofoil® + 95% Tinned Copper Braid Shield, PE Jacket

RF 200 Wireless Coax, RG58, #17, CMR/CMG

Product Description RF 200, RG-58 type, 17 AWG solid .044 bare copper conductor, gas-injected foam HDPE insulation, Duofoil® (100% coverage); tinned copper braid shield (95% coverage), PVC jacket.