Power MOSFET(Vdss=-20V, Rds(on)=0.020ohm)

Description New trench HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer wi

Trench Technology, Ultra Low On-Resistance, P-Channel MOSFET

Description New trench HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer wi

Trench Technology

Description New trench HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer wi

16-Bit 1 MSPS SAR Unipolar ADC with Ref

GENERAL DESCRIPTION The AD7667is a 16-bit, 1 MSPS, charge redistribution SAR analog-to-digital converter that operates from a single 5 V power supply. The part contains a high speed 16-bit sampling ADC, an internal conversion clock, internal reference, error correction circuits, and both serial

16-Bit, 250 kSPS, Unipolar/Bipolar Programmable Input PulSAR ADC

GENERAL DESCRIPTION The AD7610 is a 16-bit charge redistribution successive approximation register (SAR), architecture analog-to-digital converter (ADC) fabricated on Analog Devices, Inc.’s iCMOS high voltage process. The device is configured through hardware or via a dedicated write only seria

Lightweight Command Unit

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20 (7/28) AWG Tinned Copper

文件：406.72 Kbytes Page：4 Pages

SPACERS & STANDOFFS

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