HEXFET Power MOSFET

Benefits ● Low Gate to Drain Charge to Reduce Switching Losses ● Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) ● Fully Characterized Avalanche Voltage and Current Applications ● High frequency DC-DC converters ● Lead-Free

HEXFET Power MOSFET

Benefits ● Low Gate to Drain Charge to Reduce Switching Losses ● Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) ● Fully Characterized Avalanche Voltage and Current Applications ● High frequency DC-DC converters

Bipolar Transistor -50V, -0.4A, Low VCE(sat) PNP Single SSFP

Bipolar Transistor –50V, –0.4A, Low VCE(sat) PNP Single SSFP Features • Large current capacity • Low collector-to-emitter saturation voltage (resistance) : RCE(sat) typ=210mΩ[IC=0.5A, IB=50mA] • Ultrasmall package facilitates miniaturization in end products • Small ON-resistance (Ron) Appli

HEXFET Power MOSFET

Benefits ● Low Gate to Drain Charge to Reduce Switching Losses ● Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) ● Fully Characterized Avalanche Voltage and Current Applications ● High frequency DC-DC converters ● Lead-Free

10G USB 3.2 Re-timer (1-Port)

Features * Built-in re-timer ㅡ Integrated re-timer for USB 3.2 1-port (Tx/Rx) up to 10Gbps ㅡ Supports both Separate Reference Clock Independent SSC (SRIS) and Bit-Level Re- * timer (BLR) Architectures of USB3.1 Specification (Appendix-E) ㅡ 1055 compensation to recover up to 23dB channel loss

Bidirectional Active USB-C™ Cable for USB3.2 (10G) and DP1.3 (8.1G)

Features  Bidirectional active USB-C cable carrying 4L DP or 2L DP and USB3.2 - Supports up to 4L of DisplayPort in/out, with signal conditioning up to 8.1Gbps (supports HBR3, HBR2, HBR, RBR rates) - Supports USB3.1 in/out, with signal conditioning up to 10Gbps - Supports USB2.0 (480Mbps) -