Power MOSFET(Vdss=60V)

Benefits ● Low Gate to Drain Charge to Reduce Switching Losses ● Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) ● Fully Characterized Avalanche Voltage and Current Applications ● High frequency DC-DC converters

N-Ch 60V Fast Switching MOSFETs

100% EAS Guaranteed Green Device Available Super Low Gate Charge ExcellentCdV/dt effect decline Advanced high cell density Trench technology

60V 单个 N 通道 HEXFET Power MOSFET, 采用 SO-8 封装

High frequency DC-DC converters

Benefits ● Low Gate to Drain Charge to Reduce Switching Losses ● Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) ● Fully Characterized Avalanche Voltage and Current Applications ● High frequency DC-DC converters ● Lead-Free

SMPS MOSFET

Benefits ● Low Gate to Drain Charge to Reduce Switching Losses ● Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) ● Fully Characterized Avalanche Voltage and Current Applications ● High frequency DC-DC converters ● Lead-Free

SMPS MOSFET

Description These HEXFET Power MOSFETs are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. The efficient SO-8 pa

Advanced Process Technology

Description These HEXFET Power MOSFETs are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. The efficient SO-8 pa

Advanced Process Technology

Description These HEXFET Power MOSFETs are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. The efficient SO-8 pa

High frequency DC-DC converters

Benefits ● Low Gate to Drain Charge to Reduce Switching Losses ● Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) ● Fully Characterized Avalanche Voltage and Current Applications ● High frequency DC-DC converters ● Lead-Free

High frequency DC-DC converters

文件：133.78 Kbytes Page：8 Pages

High frequency DC-DC converters

文件：133.78 Kbytes Page：8 Pages

60V 单个 N 通道 HEXFET Power MOSFET, 采用 SO-8 封装

Industry-standard pinout SO-8 Package

文件：203.44 Kbytes Page：8 Pages

Industry-standard pinout SO-8 Package

文件：203.44 Kbytes Page：8 Pages

Advanced Process Technology

N-Channel 60-V (D-S) MOSFET

文件：1.88222 Mbytes Page：9 Pages

SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER

DESCRIPTION The 7477/7478 group is the single-chip microcomputer designed with CMOS silicon gate technology. The single-chip microcomputer is useful for business equipment and other consumer applications. In addition to its simple instruction set, the ROM, RAM, and I/O addresses are placed on t

1 MSPS, 12-/10-/8-Bit ADCs in 6-Lead SOT-23

GENERAL DESCRIPTION The AD7476/AD7477/AD7478 are, respectively, 12-bit, 10-bit, and 8-bit, high speed, low power, successive-approximation ADCs. The parts operate from a single 2.35 V to 5.25 V power supply and feature throughput rates up to 1 MSPS. The parts contain a low noise, wide bandwidth t

8-BIT SINGLE-CHIP MICROCOMPUTER 740 FAMILY / 7470 SERIES

文件：4.45554 Mbytes Page：354 Pages

8-BIT SINGLE-CHIP MICROCOMPUTER 740 FAMILY / 7470 SERIES

文件：4.90022 Mbytes Page：361 Pages

1 MSPS, 12-/10-/8-Bit ADCs in 6-Lead SOT-23

文件：466.21 Kbytes Page：24 Pages