Power MOSFET(Vdss=60V)

Benefits ● Low Gate to Drain Charge to Reduce Switching Losses ● Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) ● Fully Characterized Avalanche Voltage and Current Applications ● High frequency DC-DC converters

N-Ch 60V Fast Switching MOSFETs

100% EAS Guaranteed Green Device Available Super Low Gate Charge ExcellentCdV/dt effect decline Advanced high cell density Trench technology

采用 SO-8 封装的 60V 单 N 通道 HEXFET 功率 MOSFET

\n优势:\n• 符合 RoHS\n• 具有业内先进的品质\n• 快速开关\n• 纤薄外形（小于1.1毫米）\n• SOT-23 封装;

High frequency DC-DC converters

Benefits ● Low Gate to Drain Charge to Reduce Switching Losses ● Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) ● Fully Characterized Avalanche Voltage and Current Applications ● High frequency DC-DC converters ● Lead-Free

SMPS MOSFET

Benefits ● Low Gate to Drain Charge to Reduce Switching Losses ● Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) ● Fully Characterized Avalanche Voltage and Current Applications ● High frequency DC-DC converters ● Lead-Free

SMPS MOSFET

Description These HEXFET Power MOSFETs are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. The efficient SO-8 pa

Advanced Process Technology

Description These HEXFET Power MOSFETs are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. The efficient SO-8 pa

Advanced Process Technology

Description These HEXFET Power MOSFETs are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. The efficient SO-8 pa

High frequency DC-DC converters

Benefits ● Low Gate to Drain Charge to Reduce Switching Losses ● Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) ● Fully Characterized Avalanche Voltage and Current Applications ● High frequency DC-DC converters ● Lead-Free

High frequency DC-DC converters

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High frequency DC-DC converters

文件：133.78 Kbytes Page：8 Pages

60V 单个 N 通道 HEXFET Power MOSFET, 采用 SO-8 封装

Industry-standard pinout SO-8 Package

文件：203.44 Kbytes Page：8 Pages

Industry-standard pinout SO-8 Package

文件：203.44 Kbytes Page：8 Pages

Advanced Process Technology

N-Channel 60-V (D-S) MOSFET

文件：1.88222 Mbytes Page：9 Pages

1 MSPS, 12-/10-/8-Bit ADCs in 6-Lead SOT-23

GENERAL DESCRIPTION The AD7476/AD7477/AD7478 are, respectively, 12-bit, 10-bit, and 8-bit, high speed, low power, successive-approximation ADCs. The parts operate from a single 2.35 V to 5.25 V power supply and feature throughput rates up to 1 MSPS. The parts contain a low noise, wide bandwidth t

1 MSPS, 12-/10-/8-Bit ADCs in 6-Lead SOT-23

GENERAL DESCRIPTION The AD7476/AD7477/AD7478 are, respectively, 12-bit, 10-bit, and 8-bit, high speed, low power, successive-approximation ADCs. The parts operate from a single 2.35 V to 5.25 V power supply and feature throughput rates up to 1 MSPS. The parts contain a low noise, wide bandwidth t

1 MSPS, 12-/10-/8-Bit ADCs in 6-Lead SOT-23

GENERAL DESCRIPTION The AD7476/AD7477/AD7478 are, respectively, 12-bit, 10-bit, and 8-bit, high speed, low power, successive-approximation ADCs. The parts operate from a single 2.35 V to 5.25 V power supply and feature throughput rates up to 1 MSPS. The parts contain a low noise, wide bandwidth t

1MSPS, 12-/10-/8-Bit A/D Converters in 6-Lead SOT-23

文件：514.46 Kbytes Page：22 Pages