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InGaAsP STRAINED DC-PBH LASER DIODE MODULE 1 625 nm TELEMETRY APPLICATION

DESCRIPTION The NX7660JC is a 1 625 nm newly developed Strained Multiple Quantum Well (St-MQW) structure laser diode DIP module with single mode fiber and internal thermoelectric cooler. It is designed for light sources of telemetry equipment. FEATURES • Output power Pf = 5 mW MIN. @ IF = 65 mA

NEC

瑞萨

1 510 nm OPTICAL FIBER COMMUNICATIONS InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE

DESCRIPTION The NX8501 Series is a 1 510 nm phase-shifted DFB (Distributed Feed-Back) laser diode with single mode fiber. The Multiple Quantum Well (MQW) structure is adopted to achieve stable dynamic single longitudinal mode operation over wide temperature range of 0 to +65 °C. It is designed

NEC

瑞萨

1 480 nm EDFA APPLICATION InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE

DESCRIPTION The NX7460LE is a 1 480 nm pumping laser diode module with optical isolator for an EDFA (Er Doped optical Fiber Amplifier) that can expand the transmission span and compensate optical losses. It has a strained Multiple Quantum Well (st-MQW) DC-PBH laser diode that features high output

NEC

瑞萨

1 480 nm EDFA APPLICATION InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE

DESCRIPTION The NX7460LE is a 1 480 nm pumping laser diode module with optical isolator for an EDFA (Er Doped optical Fiber Amplifier) that can expand the transmission span and compensate optical losses. It has a strained Multiple Quantum Well (st-MQW) DC-PBH laser diode that features high output

NEC

瑞萨

1 480 nm EDFA APPLICATION InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE

DESCRIPTION The NX7460LE is a 1 480 nm pumping laser diode module with optical isolator for an EDFA (Er Doped optical Fiber Amplifier) that can expand the transmission span and compensate optical losses. It has a strained Multiple Quantum Well (st-MQW) DC-PBH laser diode that features high output

NEC

瑞萨

IRF7460TR产品属性

  • 类型

    描述

  • 型号

    IRF7460TR

  • 功能描述

    MOSFET N-CH 20V 12A 8-SOIC

  • RoHS

  • 类别

    分离式半导体产品 >> FET - 单

  • 系列

    HEXFET®

  • 标准包装

    1,000

  • 系列

    MESH OVERLAY™ FET

  • MOSFET N 通道,金属氧化物 FET

  • 特点

    逻辑电平门

  • 漏极至源极电压(Vdss)

    200V 电流 - 连续漏极(Id) @ 25°

  • C

    18A 开态Rds(最大)@ Id, Vgs @ 25°

  • C

    180 毫欧 @ 9A,10V Id 时的

  • Vgs(th)(最大)

    4V @ 250µA 闸电荷(Qg) @

  • Vgs

    72nC @ 10V 输入电容(Ciss) @

  • Vds

    1560pF @ 25V 功率 -

  • 最大

    40W

  • 安装类型

    通孔

  • 封装/外壳

    TO-220-3 整包

  • 供应商设备封装

    TO-220FP

  • 包装

    管件

更新时间:2026-3-18 23:00:02
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
DIODES(美台)
25+
SMD7050-6P
6843
样件支持,可原厂排单订货!
DIODES(美台)
25+
SMD7050-6P
6895
正规渠道,免费送样。支持账期,BOM一站式配齐
NOV
0719+
No
690
一级代理,专注军工、汽车、医疗、工业、新能源、电力
NEC
24+
NA
990000
明嘉莱只做原装正品现货
NEC
21+
NA
1062
只做原装正品,不止网上数量,欢迎电话微信查询!
CEL
24+
NA
5000
进口原装正品优势供应
ASIC
2450+
BGA
8850
只做原装正品假一赔十为客户做到零风险!!
RENESAS
23+
原厂原封□□□
20000
原厂授权代理分销现货只做原装正迈科技样品支持现货
RENESAS/瑞萨
23+
42500
原厂授权一级代理,专业海外优势订货,价格优势、品种
NDK
NA
8560
一级代理 原装正品假一罚十价格优势长期供货

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