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型号 功能描述 生产厂家 企业 LOGO 操作
IRF7460

8-PIN SYNCHRONOUS PWM CONTROLLER

DESCRIPTION The IRU3037 controller IC is designed to provide a low cost synchronous Buck regulator for on-board DC to DC converter applications. With the migration of today’s ASIC products requiring low supply voltages such as 1.8V and lower, together with currents in excess of 3A, traditional li

IRF

IRF7460

Power MOSFET(Vdss=20V, Id=12A)

Benefits • Ultra-Low Gate Impedance • Very Low RDS(on) • Fully Characterized Avalanche Voltage and Current Applications • High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use • High Frequency Buck Converters for Computer Processor Power

IRF

IRF7460

Power MOSFET(Vdss=20V, Id=12A)

INFINEON

英飞凌

HEXFET Power MOSFET

SMPS MOSFET Benefits ● Ultra-Low Gate Impedance ● Very Low RDS(on) ● Fully Characterized Avalanche Voltage and Current Applications ● High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use ● High Frequency Buck Converters for Compu

IRF

InGaAsP STRAINED DC-PBH LASER DIODE MODULE 1 625 nm TELEMETRY APPLICATION

DESCRIPTION The NX7660JC is a 1 625 nm newly developed Strained Multiple Quantum Well (St-MQW) structure laser diode DIP module with single mode fiber and internal thermoelectric cooler. It is designed for light sources of telemetry equipment. FEATURES • Output power Pf = 5 mW MIN. @ IF = 65 mA

NEC

瑞萨

1 510 nm OPTICAL FIBER COMMUNICATIONS InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE

DESCRIPTION The NX8501 Series is a 1 510 nm phase-shifted DFB (Distributed Feed-Back) laser diode with single mode fiber. The Multiple Quantum Well (MQW) structure is adopted to achieve stable dynamic single longitudinal mode operation over wide temperature range of 0 to +65 °C. It is designed

NEC

瑞萨

1 480 nm EDFA APPLICATION InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE

DESCRIPTION The NX7460LE is a 1 480 nm pumping laser diode module with optical isolator for an EDFA (Er Doped optical Fiber Amplifier) that can expand the transmission span and compensate optical losses. It has a strained Multiple Quantum Well (st-MQW) DC-PBH laser diode that features high output

NEC

瑞萨

1 480 nm EDFA APPLICATION InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE

DESCRIPTION The NX7460LE is a 1 480 nm pumping laser diode module with optical isolator for an EDFA (Er Doped optical Fiber Amplifier) that can expand the transmission span and compensate optical losses. It has a strained Multiple Quantum Well (st-MQW) DC-PBH laser diode that features high output

NEC

瑞萨

1 480 nm EDFA APPLICATION InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE

DESCRIPTION The NX7460LE is a 1 480 nm pumping laser diode module with optical isolator for an EDFA (Er Doped optical Fiber Amplifier) that can expand the transmission span and compensate optical losses. It has a strained Multiple Quantum Well (st-MQW) DC-PBH laser diode that features high output

NEC

瑞萨

IRF7460产品属性

  • 类型

    描述

  • 型号

    IRF7460

  • 功能描述

    MOSFET N-CH 20V 12A 8-SOIC

  • RoHS

  • 类别

    分离式半导体产品 >> FET - 单

  • 系列

    HEXFET®

  • 标准包装

    1,000

  • 系列

    MESH OVERLAY™ FET

  • MOSFET N 通道,金属氧化物 FET

  • 特点

    逻辑电平门

  • 漏极至源极电压(Vdss)

    200V 电流 - 连续漏极(Id) @ 25°

  • C

    18A 开态Rds(最大)@ Id, Vgs @ 25°

  • C

    180 毫欧 @ 9A,10V Id 时的

  • Vgs(th)(最大)

    4V @ 250µA 闸电荷(Qg) @

  • Vgs

    72nC @ 10V 输入电容(Ciss) @

  • Vds

    1560pF @ 25V 功率 -

  • 最大

    40W

  • 安装类型

    通孔

  • 封装/外壳

    TO-220-3 整包

  • 供应商设备封装

    TO-220FP

  • 包装

    管件

更新时间:2026-5-19 18:53:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
24+/25+
3737
原装正品现货库存价优
IRF
25+
SOP-8
10285
百分百原装正品 真实公司现货库存 本公司只做原装 可
IR
2450+
SOP-8
8850
只做原装正品假一赔十为客户做到零风险!!
IR
25+
SOP8
30000
代理全新原装现货,价格优势
IR
26+
SOP8
9896
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订
IOR
2015+
SOP/DIP
19889
一级代理原装现货,特价热卖!
IR
25+
SOP8
3200
全新原装、诚信经营、公司现货销售
IR
25+23+
SOP8
31152
绝对原装正品全新进口深圳现货
IOR-PBF
20+
SOP8
2960
诚信交易大量库存现货
IOR
25+
SOP8
2789
原装优势!绝对公司现货!

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