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| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IRF7459PBF | HEXFETPowerMOSFET Benefits ●Ultra-LowGateImpedance ●VeryLowRDS(on)at4.5VVGS ●FullyCharacterizedAvalancheVoltageandCurrent Applications ●HighFrequencyDC-DCIsolatedConverterswithSynchronousRectificationforTelecomandIndustrialuse ●HighFrequencyBuckConvertersforComputerProcessor | IRF International Rectifier |  |   |
PowerMOSFET(Vdss=20V,Rds(on)max=9.0mohm,Id=12A) Benefits ●Ultra-LowGateImpedance ●VeryLowRDS(on)at4.5VVGS ●FullyCharacterizedAvalancheVoltageandCurrent Applications ●HighFrequencyDC-DCIsolatedConverterswithSynchronousRectificationforTelecomandIndustrialuse ●HighFrequencyBuckConvertersforComputerProcessor | IRF International Rectifier | | | |
T-13/4Bi-PinBase(.125) T-13/4Bi-PinBase(.125) | CML Chicago Miniature Lamp,inc |  | | |
P-Channel30-V(D-S)MOSFET FEATURES TrenchFETPowerMOSFETS NewLowThermalResistancePowerPAK®PackagewithLow1.07-mmProfile | VishayVishay Siliconix 威世科技威世科技半导体 |  | | |
PHOTOMULTlPLlERTUBE 文件：47.85 Kbytes Page：2 Pages | HAMAMATSUHamamatsu Photonics Co.,Ltd. 滨松光子滨松光子学株式会社 |  | |
IRF7459PBF产品属性
- 类型
描述
- 型号
IRF7459PBF
- 功能描述
MOSFET 20V 1 N-CH HEXFET 9mOhms 23nC
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
2015+ |
SOP8 |
19889 |
一级代理原装现货,特价热卖! |
|||
Infineon Technologies |
21+ |
8-SO |
4000 |
100%进口原装!长期供应!绝对优势价格(诚信经营)! |
|||
IR |
22+ |
8-SO |
25000 |
只有原装原装,支持BOM配单 |
|||
IR |
23+ |
SOP8 |
4562 |
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、 |
|||
IR |
22+ |
SOP-8 |
8000 |
原装正品支持实单 |
|||
IR |
23+ |
SOP14 |
70180 |
##公司主营品牌长期供应100%原装现货可含税提供技术 |
|||
IR |
24+ |
SOP-8 |
105200 |
||||
IR |
2023+ |
SOP8 |
8635 |
全新原装正品,优势价格 |
|||
IR |
19+ |
SOP8 |
74682 |
原厂代理渠道,每一颗芯片都可追溯原厂； |
|||
IR |
21+ |
SOP8 |
5870 |
只做原装正品假一赔十!正规渠道订货! |
IRF7459PBF芯片相关品牌
IRF7459PBF规格书下载地址
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DdatasheetPDF页码索引
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