HEXFET Power MOSFET ( VDSS = 20V , RDS(on)max = 7.0m廓 , ID = 15A )

SMPS MOSFET Benefits ● Ultra-Low RDS(on) ● Very Low Gate Impedance ● Fully Characterized Avalanche Voltage and Current Applications ● High Frequency DC-DC Isolated Converters with Synchronous Rectification for Telecom and Industrial use ● High Frequency Buck Converters for

High Frequency DC-DC Isolated Converters with Synchronous Rectification for Telecom and Industrial use

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20V 单个 N 通道 HEXFET Power MOSFET, 采用 SO-8 封装

\n优势:\n• 工业标准引出线 SO-8 封装\n• 与现有表面封装技术兼容\n• 符合 RoHS ， 无卤素\n• 符合MSL1，工业认证;

High Frequency DC-DC Isolated Converters with Synchronous Rectification for Telecom and Industrial use

文件：182.84 Kbytes Page：8 Pages

Industry-standard pinout SO-8 Package

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Industry-standard pinout SO-8 Package

文件：201.1 Kbytes Page：8 Pages

Power MOSFET(Vdss=20V, Rds(on)max=7.0mohm, Id=15A)

SMPS MOSFET Benefits ● Ultra-Low RDS(on) ● Very Low Gate Impedance ● Fully Characterized Avalanche Voltage and Current Applications ● High Frequency DC-DC Isolated Converters with Synchronous Rectification for Telecom and Industrial use ● High Frequency Buck Converters for C

8-PIN SYNCHRONOUS PWM CONTROLLER

DESCRIPTION The IRU3037 controller IC is designed to provide a low cost synchronous Buck regulator for on-board DC to DC converter applications. With the migration of today’s ASIC products requiring low supply voltages such as 1.8V and lower, together with currents in excess of 3A, traditional li

40MHz Non-Inverting Quad CMOS Driver

General Description The EL7457C is an ultra-high speed, non-inverting quad CMOS driver. It is capable of running at clock rates up to 40MHz and features 2A peak drive capability and a nominal on-resistance of just 3Ω. The EL7457C is ideal for driving highly capacitive loads, such as storage and

40MHz Non-Inverting Quad CMOS Driver

General Description The EL7457C is an ultra-high speed, non-inverting quad CMOS driver. It is capable of running at clock rates up to 40MHz and features 2A peak drive capability and a nominal on-resistance of just 3Ω. The EL7457C is ideal for driving highly capacitive loads, such as storage and

Silicon N-Channel Power F-MOS FET (with built-in zener diode)

Silicon N-Channel Power F-MOS FET (with built-in zener diode) ■ Features ● High avalanche energy capacity ● High electrostatic breakdown voltage ● No secondary breakdown ● High breakdown voltage, large allowable power dissipation ● Allowing Low-voltage drive ■ Applications ● Contactless re