HEXFET Power MOSFET

Description These P-Channel HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applicat

-12V 单个 P 通道 HEXFET Power MOSFET, 采用 SO-8 封装

HEXFET짰Power MOSFET

Description These P-Channel HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management appl

P-Channel Enhancement Mode Power MOSFET

GENERAL FEATURES V(BR)DSS -20V RDS(ON) 8.5mΩ ID -14A

采用 SO-8 封装的无卤素和无铅 -12V 单 P 通道 HEXFET 功率 MOSFET

Ultra Low On-Resistance

文件：214.53 Kbytes Page：9 Pages

Ultra Low On-Resistance

文件：214.53 Kbytes Page：9 Pages

Ultra Low On-Resistance

文件：216.45 Kbytes Page：9 Pages

Ultra Low On-Resistance

文件：216.45 Kbytes Page：9 Pages

-12V 单个 P 通道 HEXFET Power MOSFET, 采用 SO-8 封装

Industry-standard pinout SO-8 Package

文件：200.73 Kbytes Page：10 Pages

Industry-standard pinout SO-8 Package

文件：200.73 Kbytes Page：10 Pages

Ultra Low On-Resistance

文件：216.45 Kbytes Page：9 Pages

P-Channel 12-V (D-S) MOSFET

文件：926.63 Kbytes Page：6 Pages

MachFlex™, 21G C #18 Str BC, PVC-NYL Ins, TPE Jkt, 1000V WTTC, 600V TC-ER

Product Description MachFlex™ for High Flex, 2+1G Conductor 18AWG (16x30) Bare Copper, PVC-NYL Insulation, TPE Outer Jacket, 1000V WTTC, 600V TC-ER

Strain Relief Mounting Hole Punches

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Triple 3-Input NAND Gates

文件：93.48 Kbytes Page：4 Pages

Common Mode Inductors/EMI Filters

文件：89.06 Kbytes Page：1 Pages

UMTS/NCDMA/Co-band GSM Rx Band 2 Duplexer

文件：518.059 Kbytes Page：13 Pages