N-Channel Power MOSFETs, 10A, 350V/400V

isc N-Channel Mosfet Transistor

文件：64.98 Kbytes Page：2 Pages

N-Channel Power MOSFETs

文件：345.62 Kbytes Page：5 Pages

SEMICONDUCTORS

文件：2.43533 Mbytes Page：31 Pages

HEXFET Power MOSFET

Description These P-Channel HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applicat

HEXFET짰Power MOSFET

Description These P-Channel HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management appl

P-Channel Enhancement Mode Power MOSFET

GENERAL FEATURES V(BR)DSS -20V RDS(ON) 8.5mΩ ID -14A

Generation VTechnology

Generation VTechnology Ultra Low On-Resistance N-Channel Mosfet Surface Mount Available in Tape &Reel Dynamic dv/dt Rating Fast Switching 100 Rg Tested Lead-Free Application Features VDS (V) = 30V RDS(ON) 12m (VGS = 10V) RDS(ON) 17m (VGS = 4.5V)

MOSFET

Application Generation VTechnology Ultra Low On-Resistance N-Channel Mosfet Surface Mount Available in Tape &Reel Dynamic dv/dt Rating Fast Switching 100 Rg Tested Lead-Free Features VDS (V) = 30V RDS(ON)

Power MOSFET(Vdss=30V, Id=12A)

SMPS MOSFET Benefits • Low Gate to Drain Charge to Reduce Switching Losses • Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) • Fully Characterized Avalanche Voltage and Current Applications • High frequency DC-DC converters

N-Channel MOSFET

■ Features ● VDS (V) = 30V ● ID = 12 A (VGS = 10V) ● RDS(ON)

Power MOSFET(Vdss=30V, Rds(on)=0.0135ohm)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

HEXFET Power MOSFET

Description These HEXFET®Power MOSFETs in SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these HEXFET Power MOSFETs are a 150°C junction operating temperature, fast switching speed and improved repetitive aval

Ultra Low On-Resistance

SMPS MOSFET Benefits • Low Gate to Drain Charge to Reduce Switching Losses • Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) • Fully Characterized Avalanche Voltage and Current Applications • High frequency DC-DC converters

Generation VTechnology

Generation VTechnology Ultra Low On-Resistance N-Channel Mosfet Surface Mount Available in Tape &Reel Dynamic dv/dt Rating Fast Switching 100 Rg Tested Lead-Free Application Features VDS (V) = 30V RDS(ON) 12m (VGS = 10V) RDS(ON) 17m (VGS = 4.5V)

MOSFET

Application Generation VTechnology Ultra Low On-Resistance N-Channel Mosfet Surface Mount Available in Tape &Reel Dynamic dv/dt Rating Fast Switching 100 Rg Tested Lead-Free Features VDS (V) = 30V RDS(ON)

N-Channel Enhancement Mode Power MOSFET

GENERAL FEATURES © Vo =30Vlo 124 Rosin

30V N-Channel MOSFET

Application Generation VTechnology Ultra Low On-Resistance N-Channel Mosfet Surface Mount Available in Tape &Reel Dynamic dv/dt Rating Fast Switching 100 Rg Tested Lead-Free Features VDS (V) = 30V RDS(ON)

HEXFET Power MOSFET

Benefits ● Ultra-Low Gate Impedance ● Very Low RDS(on) ● Fully Characterized Avalanche Voltage and Current ● 100 Tested for RG Applications ● Control FET for Notebook Processor Power ● Control and Synchronous Rectifier MOSFET for Graphics Cards and POL Converters in Computing, Netwo

Control FET for Notebool Processor Power, Control and Synchronous Rectifier

Benefits ● Ultra-Low Gate Impedance ● Very Low RDS(on) ● Fully Characterized Avalanche Voltage and Current ● 100 Tested for RG ● Lead-Free Applications ● Control FET for Notebook Processor Power ● Control and Synchronous Rectifier MOSFET for Graphics Cards and POL Converters in Computi

HEXFET짰 Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

Power MOSFET(Vdss=-30V, Rds(on)=0.02ohm)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

P-Channel 30 V (D-S) MOSFET

FEATURES Low On-Resistance P-Channel Mosfet Surface Mount dv/dt Rating Fast Switching

P-Channel 30 V (D-S) MOSFET

Low On-Resistance P-Channel Mosfet Surface Mount dv/dt Rating Fast Switching FEATURES

HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

P-Channel 30 V (D-S) MOSFET

FEATURES Low On-Resistance P-Channel Mosfet Surface Mount dv/dt Rating Fast Switching

P-Channel 30 V (D-S) MOSFET

Low On-Resistance P-Channel Mosfet Surface Mount dv/dt Rating Fast Switching FEATURES

采用 SO-8 封装的无卤素和无铅 -12V 单 P 通道 HEXFET 功率 MOSFET

Ultra Low On-Resistance

文件：214.53 Kbytes Page：9 Pages

Ultra Low On-Resistance

文件：214.53 Kbytes Page：9 Pages

Ultra Low On-Resistance

文件：216.45 Kbytes Page：9 Pages

Ultra Low On-Resistance

文件：216.45 Kbytes Page：9 Pages

Industry-standard pinout SO-8 Package

文件：200.73 Kbytes Page：10 Pages

-12V 单个 P 通道 HEXFET Power MOSFET, 采用 SO-8 封装

Industry-standard pinout SO-8 Package

文件：200.73 Kbytes Page：10 Pages

P-Channel 12-V (D-S) MOSFET

文件：926.63 Kbytes Page：6 Pages

Ultra Low On-Resistance

文件：216.45 Kbytes Page：9 Pages

采用 SO-8 封装的 30V 单 N 通道 HEXFET 功率 MOSFET

HEXFET POWER MOSFET

文件：239.41 Kbytes Page：9 Pages

Ultra Low On-Resistance

文件：264.75 Kbytes Page：9 Pages

Generation V Technology

文件：264.75 Kbytes Page：9 Pages

ULTAR LOW ON RESISTANCE

文件：263.63 Kbytes Page：9 Pages

ULTAR LOW ON RESISTANCE

文件：263.63 Kbytes Page：9 Pages

Industry-standard pinout SO-8 Package

文件：233.23 Kbytes Page：9 Pages

Industry-standard pinout SO-8 Package

文件：233.23 Kbytes Page：9 Pages

HEXFETPOWERMOSFET

文件：243.23 Kbytes Page：9 Pages

fast suitching

文件：263.63 Kbytes Page：9 Pages

N-Channel 20V (D-S) MOSFET

文件：1.89771 Mbytes Page：9 Pages

Control FET for Notebook Processor Power

文件：272.06 Kbytes Page：10 Pages

Control FET for Notebook Processor Power

文件：272.06 Kbytes Page：10 Pages

Control FET for Notebook Processor Power

文件：292.06 Kbytes Page：10 Pages

Control FET for Notebook Processor Power

文件：289.79 Kbytes Page：10 Pages

Control FET for Notebook Processor Power

文件：289.79 Kbytes Page：10 Pages

Control FET for Notebook Processor Power

文件：272.06 Kbytes Page：10 Pages

Control FET for Notebook Processor Power

文件：272.06 Kbytes Page：10 Pages

Generation V Technology

文件：241.88 Kbytes Page：9 Pages

GENERATION V TECHNOLOGY

文件：242.74 Kbytes Page：9 Pages

GENERATION V TECHNOLOGY

文件：242.74 Kbytes Page：9 Pages

Industry-standard pinout SO-8 Package

文件：234.12 Kbytes Page：9 Pages