N-Channel Power MOSFETs, 5.5A, 350 V/400V

Description These devices are n-channol, enhancement mode, power MOSFETs designed especially for high voltage, high speed applications, such as off-line switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers. • VQS Rated at ±20 V • Silicon Gate for Fast Switching Sp

N-Channel Power MOSFETs, 5.5 A, 350 V/400 V

Description These devices are n-channol, enhancement mode, power MOSFETs designed especially for high voltage, high speed applications, such as off-line switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers. • VQS Rated at ±20 V • Silicon Gate for Fast Switching Sp

Trans MOSFET P-CH 30V 4.7A 8-Pin SOIC

isc N-Channel MOSFET Transistor

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HEXFET Power MOSFET

Description These N-Channel HEXFET power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applicati

Dual FETKY CO-PACKAGED DUAL MOSFET PLUS SCHOTTKY DIODE

Description The FETKY™ family of Co-Pack HEXFETMOSFETs and Schottky diodes offers the designer an innovative, board space saving solution for switching regulator and power management applications. Advanced HEXFETMOSFETs combined with low forward drop Schottky results in an extremely efficient d

Dual FETKY Co-Packaged Dual MOSFET Plus Schottky Diode

Description The FETKY™ family of Co-Pack HEXFET®MOSFETs and Schottky diodes offers the designer an innovative, board space saving solution for switching regulator and power management applications. Advanced HEXFET®MOSFETs combined with low forward drop Schottky results in an extremely efficient d

HEXFET Power MOSFET

Description These N and P channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. Th

Ultra Low On-Resistance Dual N-Channel MOSFET

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HEXFET Power MOSFET

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Ultra Low On-Resistance

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Ultra Low On-Resistance Dual N-Channel MOSFET

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Ultra Low On-Resistance

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Industry-standard pinout SO-8 Package

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20V 双 N 通道 HEXFET Power MOSFET, 采用 SO-8 封装

Industry-standard pinout SO-8 Package

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Dual FETKY CO-PACKAGED DUAL MOSFET PLUS SCHOTTKY DIODE

HEXFET Power MOSFET

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PNP Transistor

PNP Transistor P/b Lead(Pb)-Free

PNP TRANSISTOR

PNP TRANSISTOR -100mA ● AF OUTPUT AMPLIFIER

TO-92 Plastic-Encapsulate Transistors

[ELITE] LOW FREQUENCY AMPLIFIER * Collector-Emitter Voltage: VCEO=-50V * Collector Dissipation: PC(max)=250mW

GROMMETS , BUSHINGS

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Capacity (20-hour) 200Ah

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