位置：首页 > IC中文资料第3775页 > IRF6621TR1PBF
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRF6621TR1PBF | DirectFETPower MOSFET Description The IRF6621PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layo | IRF |   | |
The IRF6621 combines the latest HEXFET Power MOSFET Silicon technology with the advanced DirectFET packaging to achieve the lowest on-state resistance Description The IRF6621 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout | IRF | |
IRF6621TR1PBF产品属性
- 类型
描述
- 型号
IRF6621TR1PBF
- 功能描述
MOSFET 30V 1 N-CH HEXFET DIRECTFET SQ
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Infineon |
24+ |
8500 |
原厂原包原装公司现货,假一赔十,低价出售 |
||||
Infineon Technologies |
21+ |
DIRECTFET? SQ |
1000 |
100%进口原装!长期供应!绝对优势价格(诚信经营)! |
|||
Infineon Technologies |
24+ |
原装 |
5000 |
原装正品,提供BOM配单服务 |
|||
IR |
23+ |
DIRECTFET |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
IOR |
23+ |
NA |
62903 |
##公司主营品牌长期供应100%原装现货可含税提供技术 |
|||
IR |
23+ |
DIRECTFET |
8000 |
只做原装现货 |
|||
IR |
23+ |
DirectFET |
50000 |
全新原装正品现货,支持订货 |
|||
IR |
24+ |
DirectFETtradeIso |
7500 |
||||
Infineon Technologies |
22+ |
DirectFET? Isometric SQ |
9000 |
原厂渠道,现货配单 |
|||
IR |
25+ |
DIRECTFET |
860000 |
明嘉莱只做原装正品现货 |
IRF6621TR1PBF芯片相关品牌
IRF6621TR1PBF规格书下载地址
IRF6621TR1PBF参数引脚图相关
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