位置：首页 > IC中文资料第3775页 > IRF6621TR1PBF
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRF6621TR1PBF | DirectFETPower MOSFET Description The IRF6621PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layo | IRF |   | |
The IRF6621 combines the latest HEXFET Power MOSFET Silicon technology with the advanced DirectFET packaging to achieve the lowest on-state resistance Description The IRF6621 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout | IRF | |
IRF6621TR1PBF产品属性
- 类型
描述
- 型号
IRF6621TR1PBF
- 功能描述
MOSFET 30V 1 N-CH HEXFET DIRECTFET SQ
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
24+ |
NA/ |
18000 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
IOR |
07+ |
LCC |
2000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
IR |
07+ |
DIRECTFET |
15000 |
||||
IR |
2450+ |
LCC |
6540 |
原装现货或订发货1-2周 |
|||
Infineon Technologies |
21+ |
DIRECTFET? SQ |
1000 |
100%进口原装!长期供应!绝对优势价格(诚信经营)! |
|||
IOR |
25+ |
DIRECTFE |
4500 |
全新原装、诚信经营、公司现货销售 |
|||
Infineon |
24+ |
8500 |
原厂原包原装公司现货,假一赔十,低价出售 |
||||
Infineon |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
IR |
24+ |
DirectFETtradeIso |
7500 |
||||
IOR |
23+ |
NA |
62903 |
##公司主营品牌长期供应100%原装现货可含税提供技术 |
IRF6621TR1PBF芯片相关品牌
IRF6621TR1PBF规格书下载地址
IRF6621TR1PBF参数引脚图相关
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