N-channel 200V - 0.15廓 - 15A - TO-220 MESH OVERLAY??Power MOSFET

Description This Power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY™ process. This technology matches and improves the performances compared with standard parts from various sources General features ■ Extremely high dv/dt capability ■ Gate charge minimize

N-channel 200V - 0.15Ω - 15A - TO-220 MESH OVERLAY™ Power MOSFET

High Current Transistors(PNP Silicon)

High Current Transistors PNP Silicon

High Current Transistors

High Current Transistors PNP Silicon

SWITCHMODE??Power Rectifirers DPAK Surface Mount Package

SCHOTTKY BARRIER RECTIFIERS 6 AMPERES 20 TO 60 VOLTS . . . in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • Extremely Fast Switching • Extremely Low Forward Drop • Platinum Barrier with Avalanche Guardrings • Gua

ISOLATION SCHOTTKY BARRIER RECTIFIERS(VOLTAGE 20 to 60 Volts CURRENT - 6 Ampere)

VOLTAGE 20 to 60 Volts CURRENT 6.0 Ampers FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound. • Exceeds environmental standards of MIL-S-19500/228 • Low power loss, high efficiency.

DPAK SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER(VOLTAGE - 20 to 100 Volts CURRENT - 6.0 Amperes)

VOLTAGE - 20 to 100 Volts CURRENT - 6.0 Amperes FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • For surface mounted applications • Low profile package • Built-in strain relief • Metal to silicon rectifier majority carrier conduction • Low power los