TRANSISTORS N-CHANNEL(Vdss=500V, Rds(on)=0.27ohm, Id=21)

The HEXFET®technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on state resistance combined with high transconductance; superior reverse energy and dio

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 21A@ TC=25℃ · Drain Source Voltage -VDSS=500V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.27Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

Single channel high reliability power MOSFETs

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Inductors, Epoxy Conformal Coated, Axial Leaded

Axial lead type, small lightweight design\nSpecial magnetic core structure contributes to high Q and self-resonant frequencies\nTreated with epoxy resin coating for humidity resistance to ensure long life;

Inductors, Epoxy Conformal Coated, Axial Leaded

Axial lead type, small lightweight design\nSpecial magnetic core structure contributes to high Q and self-resonant frequencies\nTreated with epoxy resin coating for humidity resistance to ensure long life;

Inductors Epoxy Conformal Coated, Axial Leaded

FEATURES • Axial lead type, small lightweight design • Special magnetic core structure contributes to high Q and self-resonant frequencies • Treated with epoxy resin coating for humidity resistance to ensure long life • Heat resistant adhesives and special structural design for effecti

Inductors, Epoxy Conformal Coated, Axial Leaded

FEATURES • Axial lead type, small lightweight design • Special magnetic core structure contributes to high Q and self-resonant frequencies • Treated with epoxy resin coating for humidity resistance to ensure long life • Heat resistant adhesives and special structural design for effective op

isc N-Channel MOSFET Transistor

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Repetitive Avalanche Ratings

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500V, N-CHANNEL

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N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

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N-Channel Power MOSFET

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Repetitive Avalanche Ratings

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REPETITIVE AVALANCHE AND dv/dt RATED HEXFET?숿RANSISTORS THRU-HOLE (TO-204AA/AE)

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isc N-Channel MOSFET Transistor

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封装/外壳：轴向 包装：卷带（TR） 描述：FIXED IND 1.5MH 160MA 10 OHM TH 电感器，线圈，扼流圈 固定电感器

封装/外壳：轴向 包装：卷带（TR） 描述：FIXED IND 15MH 55MA 102 OHM TH 电感器，线圈，扼流圈 固定电感器

Inductors Epoxy Conformal Coated, Axial Leaded

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