N-CHANNEL POWER MOSFETS

FEATURES ● Low RDS(on) ● Improved inductive ruggedness ● Fast switching times ● Rugged polysilicon gate cell structure ● Low input capacitance ● Extended safe operating area ● Improved high temperature reliability ● TO-3 package (Standard)

N-Channel Power MOSFETs, 20 A, 60-100 V

Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high power, high speed applications, such as switching power, supplies, UPS, AC and DC motor control, relay and solenoid drivers and high energy pulse circuits. ● Low RDS(on) ● VGS Rated at ±20 V ●

High Power,High Speed Applications

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Trans MOSFET 60V 12A 3-Pin(2+Tab) TO-3

Aluminum Capacitors Axial Long-Life, DIN-Based

FEATURES • Long useful life: up to 15 000 h at 85 °C • Taped versions up to case Ø 15 mm x 30 mm available for automatic insertion • Charge and discharge proof • Polarized aluminum electrolytic capacitors, non-solid electrolyte • Axial leads, cylindrical aluminum case, insulated with a blu

GABINETE S ALMENDRA 111 X 83 X 64 mm

Descripción Es un gabinete electrónico de escritorio, fabricado en dos piezas con plástico ABS. Aplicaciones Este gabinete puede ser usado para guardar componentes electrónicos en su interior, para proteger diseños de PCB o para montar diversos proyectos de electrónica.

GABINETE S GRIS 111 X 83 X 64 mm

Descripción Es un gabinete electrónico de escritorio, fabricado en dos piezas con plástico ABS. Aplicaciones Este gabinete puede ser usado para guardar componentes electrónicos en su interior, para proteger diseños de PCB o para montar diversos proyectos de electrónica.

Aluminum Capacitors Axial Long Life, DIN-Based

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High breakdown voltage 10KV/15KV

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