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位置：首页 > IC中文资料第5587页 > IRF101

IRF101价格

参考价格：￥2.6922

型号：IRF1010EPBF 品牌：INTERNATIONAL 备注：这里有IRF101多少钱，2025年最近7天走势，今日出价，今日竞价，IRF101批发/采购报价，IRF101行情走势销售排行榜，IRF101报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IRF101

N-Channel Power MOSFETs, 27 A, 60-100V

Fairchild

仙童半导体

IRF1010E

Power MOSFET(Vdss=60V,Rds(on)=12mohm,Id=84A?

• Advanced Process Technology • Ultra Low On-Resistance • Dynamic dv/dt Rating • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated Description Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve ex

IRF

IRF1010EL

Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=84A??

Description Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, pr

IRF

IRF1010ELPBF

HEXFET Power MOSFET

Description Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, pr

IRF

IRF1010EPBF

HEXFET짰 Power MOSFET

Description Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for,

IRF

IRF1010ES

Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=84A??

Description Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, pr

IRF

IRF1010ESPBF

HEXFET Power MOSFET

Description Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, pr

IRF

IRF1010EZ

AUTOMOTIVE MOSFET

Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.These features combi

IRF

IRF1010EZ

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=75A@ TC=25℃ ·Drain Source Voltage -VDSS=60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 8.5mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

IRF1010EZL

AUTOMOTIVE MOSFET

Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.These features combi

IRF

IRF1010EZLPBF

AUTOMOTIVE MOSFET

Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.These features combi

IRF

IRF1010EZLPBF

Advanced Process Technology

Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.These features combi

IRF

IRF1010EZPBF

AUTOMOTIVE MOSFET

Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.These features combi

IRF

IRF1010EZPBF

Advanced Process Technology

Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.These features combi

IRF

IRF1010EZS

AUTOMOTIVE MOSFET

Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.These features combi

IRF

IRF1010EZS

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=75A@ TC=25℃ ·Drain Source Voltage -VDSS=60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 8.5mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

IRF1010EZSPBF

Advanced Process Technology

Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.These features combi

IRF

IRF1010EZSPBF

AUTOMOTIVE MOSFET

Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.These features combi

IRF

IRF1010EZSTRLP

Advanced Process Technology

Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.These features combi

IRF

IRF1010N

Power MOSFET(Vdss=55V, Rds(on)=11mohm, Id=85A??

VDSS = 55V RDS(on) = 11mΩ ID = 85A‡ Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device desig

IRF

IRF1010NL

Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=85A??

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p

IRF

IRF1010NL

Fully Avalanche Rated

Description The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low inter

KERSEMI

IRF1010NLPBF

HEXFET짰 Power MOSFET

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p

IRF

IRF1010NPBF

HEXFET Power MOSFET

Description Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, pr

IRF

IRF1010NPBF

Advanced Process Technology Ultra Low On-Resistance

Description Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, pr

KERSEMI

IRF1010NS

Fully Avalanche Rated

Description The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low inter

KERSEMI

IRF1010NS

Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=85A??

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p

IRF

IRF1010NSPBF

HEXFET짰 Power MOSFET

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p

IRF

IRF1010Z

AUTOMOTIVE MOSFET

AUTOMOTIVE MOSFET Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating tempera ture, fast switc

IRF

IRF1010Z

N-Channel MOSFET Transistor

• DESCRITION • reliable device for use in a wide variety of applications • FEATURES • Static drain-source on-resistance: RDS(on) ≤7.5mΩ • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operati

ISC

无锡固电

IRF1010ZL

AUTOMOTIVE MOSFET

AUTOMOTIVE MOSFET Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating tempera ture, fast switc

IRF

IRF1010ZS

AUTOMOTIVE MOSFET

AUTOMOTIVE MOSFET Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating tempera ture, fast switc

IRF

IRF1018EPBF

HEXFET Power MOSFET

Benefits ● Improved Gate, Avalanche and Dynamic dv/dt Ruggedness ● Fully Characterized Capacitance and Avalanche SOA ● Enhanced body diode dV/dt and dI/dt Capability Applications ● High Efficiency Synchronous Rectification in SMPS ● Uninterruptible Power Supply ● High Speed Power Switching

IRF

IRF1018ESLPBF

HEXFET Power MOSFET

Benefits ● Improved Gate, Avalanche and Dynamic dv/dt Ruggedness ● Fully Characterized Capacitance and Avalanche SOA ● Enhanced body diode dV/dt and dI/dt Capability Applications ● High Efficiency Synchronous Rectification in SMPS ● Uninterruptible Power Supply ● High Speed Power Switching

IRF

IRF1018ESPBF

HEXFET Power MOSFET

Benefits ● Improved Gate, Avalanche and Dynamic dv/dt Ruggedness ● Fully Characterized Capacitance and Avalanche SOA ● Enhanced body diode dV/dt and dI/dt Capability Applications ● High Efficiency Synchronous Rectification in SMPS ● Uninterruptible Power Supply ● High Speed Power Switching

IRF

IRF1010

N-Channel Power MOSFET

文件：632.22 Kbytes Page：7 Pages

NELLSEMI

尼尔半导体

IRF1010E

N-Channel MOSFET Transistor

文件：338.48 Kbytes Page：2 Pages

ISC

无锡固电

IRF1010E

Ultra Low On-Resistance

文件：786.41 Kbytes Page：8 Pages

KERSEMI

IRF1010EL

Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=84A⑦)

Infineon

英飞凌

IRF1010ELPBF

Advanced Process Technology

文件：227.87 Kbytes Page：11 Pages

IRF

IRF1010EPBF

Advanced Process Technology Ultra Low On-Resistance

文件：3.12153 Mbytes Page：8 Pages

KERSEMI

IRF1010ES

isc N-Channel MOSFET Transistor

文件：263.33 Kbytes Page：2 Pages

ISC

无锡固电

IRF1010ES

采用 D2-Pak 封装的 60V 单 N 通道功率 MOSFET

Infineon

英飞凌

IRF1010ESPBF

Advanced Process Technology

文件：227.87 Kbytes Page：11 Pages

IRF

IRF1010ESPBF_15

Advanced Process Technology

文件：227.87 Kbytes Page：11 Pages

IRF

IRF1010EZ

N-Channel MOSFET Transistor

文件：338.8 Kbytes Page：2 Pages

ISC

无锡固电

IRF1010EZ

采用 TO-220 封装的 60V 单 N 沟道功率 MOSFET

Infineon

英飞凌

IRF1010EZPBF

Advanced Process Technology

文件：413.46 Kbytes Page：12 Pages

IRF

IRF1010EZPBF_15

Advanced Process Technology

文件：413.46 Kbytes Page：12 Pages

IRF

IRF1010EZS

Isc N-Channel MOSFET Transistor

文件：299.58 Kbytes Page：2 Pages

ISC

无锡固电

IRF1010N

N-Channel MOSFET Transistor

文件：338.85 Kbytes Page：2 Pages

ISC

无锡固电

IRF1010NLPBF

Advanced Process Technology

文件：298.2 Kbytes Page：11 Pages

IRF

IRF1010NLPBF

Advanced Process Technology

文件：298.2 Kbytes Page：11 Pages

IRF

IRF1010NPBF

Advanced Process Technology

文件：231.48 Kbytes Page：8 Pages

IRF

IRF1010NPBF_15

Advanced Process Technology

文件：231.48 Kbytes Page：8 Pages

IRF

IRF1010NS

isc N-Channel MOSFET Transistor

文件：263.33 Kbytes Page：2 Pages

ISC

无锡固电

IRF1010NSPBF

Advanced Process Technology

文件：298.2 Kbytes Page：11 Pages

IRF

IRF1010NSPBF

Advanced Process Technology

文件：298.2 Kbytes Page：11 Pages

IRF

IRF1010NSPBF_15

Advanced Process Technology

文件：298.2 Kbytes Page：11 Pages

IRF

IRF1010NSTRRPBF

Advanced Process Technology

文件：298.2 Kbytes Page：11 Pages

IRF

IRF101产品属性

  • 类型

    描述

  • 型号

    IRF101

  • 制造商

    FAIRCHILD

  • 制造商全称

    Fairchild Semiconductor

  • 功能描述

    N-Channel Power MOSFETs, 27 A, 60-100V

IRF101供应商更多...

更新时间：2025-11-21 15:19:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市云美电子科技有限公司
IRF1010NSPBF
INFINEON/英飞凌
24+
TO263
42000
只做原装进口现货
询价
富凯科技(深圳）有限公司
IRF1018EPBF
INFINEON/英飞凌
24+
TO-220
10000
只做原装，欢迎询价，量大价优
询价
深圳市赛尔通科技有限公司
IRF1010NS
IR
23+
65480
询价
深圳市近平电子有限公司
IRF1010EPBF
IR
11+/MX
TO-220AB
6000
绝对原装自己现货
询价
深圳市宇创芯科技有限公司
IRF1018EPBF
INFINEON/英飞凌
24+
TO-220
9600
原装现货,优势供应,支持实单!
询价
深圳市煦洪科技有限公司
IRF1010ESTRLPBF
Infineon/英飞凌
25+
原厂封装
10280
原厂授权代理,专注军工、汽车、医疗、工业、新能源！
询价
深圳市百诺芯科技有限公司
IRF1010ZPBF
INFINEON/英飞凌
23+
NA
12730
原装正品代理渠道价格优势
询价
深圳市中联芯电子有限公司
IRF1018EPBF
IR
24+
TO-220AB
10000
只做原装欢迎含税交易,假一赔十,放心购买
询价
深圳市星佑电子有限公司
IRF1010ESTRL
INTERNATIONA
05+
原厂原装
5070
只做全新原装真实现货供应
询价
中天科工半导体（深圳）有限公司
IRF1010E-PBF-CN
INFINEON/英飞凌
25+
TO-220
32000
INFINEON/英飞凌全新特价IRF1010E-PBF-CN即刻询购立享优惠#长期有货
询价

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