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位置：首页 > IC中文资料第7963页 > IRF

IRF价格

参考价格：￥4.0530

型号：IRF01BH101K 品牌：Vishay 备注：这里有IRF多少钱，2024年最近7天走势，今日出价，今日竞价，IRF批发/采购报价，IRF行情走势销售排行榜，IRF报价。
型号 功能描述 生产厂家&企业 LOGO 操作
IRF

Inductors Epoxy Conformal Coated Uniform Roll Coated

FEATURES •Flame-retardantcoatingandcolorbandidentification •Uniformcoatingisexcellentforautomaticinsertion •Availableinbulk,ammoandreelpackperEIARS/296 •SuperiorelectricalspecificationshighQandselfresonantfrequency,lowDCresistance,highratedDCcurrent TEST

VishayVishay Siliconix

威世科技威世科技半导体

Vishay
IRF01ER100K

Inductors Epoxy Conformal Coated Uniform Roll Coated

FEATURES •Flame-retardantcoatingandcolorbandidentification •Uniformcoatingisexcellentforautomaticinsertion •Availableinbulk,ammoandreelpackperEIARS/296 •SuperiorelectricalspecificationshighQandselfresonantfrequency,lowDCresistance,highratedDCcurrent TEST

VishayVishay Siliconix

威世科技威世科技半导体

Vishay
IRF034

REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE)

TheHEXFET®technologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance;superiorreverseenergyandd

IRF

International Rectifier

IRF
IRF044

REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE)

ProductSummary TheHEXFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance;superiorrever

IRF

International Rectifier

IRF
IRF044

Simple Drive Requirements

DESCRIPTION •DrainCurrentID=44A@TC=25℃ •DrainSourceVoltage- :VDSS=60V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=0.028Ω(Max) •SimpleDriveRequirements APPLICATIONS •Switchingpowersupplies •Motorcontrols,InvertersandChoppers •Audioamplifiersandhighen

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
IRF054

REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE)

60V,N-CHANNEL TheHEXFET™technologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance;superior

IRF

International Rectifier

IRF
IRF064N

Power MOSFET(Vdss=55V, Rds(on)=0.008ohm, Id=110A??

FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,providesthedesigne

IRF

International Rectifier

IRF
IRF-1

Inductors Epoxy Conformal Coated Uniform Roll Coated

FEATURES •Flame-retardantcoatingandcolorbandidentification •Uniformcoatingisexcellentforautomaticinsertion •Availableinbulk,ammoandreelpackperEIARS/296 •SuperiorelectricalspecificationshighQandselfresonantfrequency,lowDCresistance,highratedDCcurrent TEST

VishayVishay Siliconix

威世科技威世科技半导体

Vishay
IRF100B201

100 V N-Channel MOSFET

Benefits ImprovedGate,AvalancheandDynamicdV/dtRuggedness FullyCharacterizedCapacitanceandAvalancheSOA EnhancedbodydiodedV/dtanddI/dtCapability Lead-Free,RoHSCompliant,Halogen-Free VDS=100V ID=192A RDS(ON)(atVGS=10V)

UMWUMW Rightway Semiconductor Co., Ltd.

友台半导体广东友台半导体有限公司(简称UMW?)

UMW
IRF100P218

N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=209A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.28mΩ(Max)@VGS=10V DESCRIPTION ·DC-DCConverters ·MotorDrive ·PowerSwitch

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
IRF101

N-Channel Power MOSFETs, 27 A, 60-100V

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
IRF1010E

Power MOSFET(Vdss=60V,Rds(on)=12mohm,Id=84A?

•AdvancedProcessTechnology •UltraLowOn-Resistance •Dynamicdv/dtRating •175°COperatingTemperature •FastSwitching •FullyAvalancheRated Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveex

IRF

International Rectifier

IRF
IRF1010EL

Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=84A??

Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,pr

IRF

International Rectifier

IRF
IRF1010ELPBF

HEXFET Power MOSFET

Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,pr

IRF

International Rectifier

IRF
IRF1010EPBF

HEXFET짰 Power MOSFET

Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,

IRF

International Rectifier

IRF
IRF1010ES

Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=84A??

Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,pr

IRF

International Rectifier

IRF
IRF1010ESPBF

HEXFET Power MOSFET

Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,pr

IRF

International Rectifier

IRF
IRF1010EZ

AUTOMOTIVE MOSFET

Description ThisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturescombi

IRF

International Rectifier

IRF
IRF1010EZ

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=75A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=8.5mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
IRF1010EZL

AUTOMOTIVE MOSFET

Description ThisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturescombi

IRF

International Rectifier

IRF
IRF1010EZLPBF

AUTOMOTIVE MOSFET

Description ThisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturescombi

IRF

International Rectifier

IRF
IRF1010EZLPBF

Advanced Process Technology

Description ThisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturescombi

IRF

International Rectifier

IRF
IRF1010EZPBF

AUTOMOTIVE MOSFET

Description ThisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturescombi

IRF

International Rectifier

IRF
IRF1010EZPBF

Advanced Process Technology

Description ThisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturescombi

IRF

International Rectifier

IRF
IRF1010EZS

AUTOMOTIVE MOSFET

Description ThisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturescombi

IRF

International Rectifier

IRF
IRF1010EZS

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=75A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=8.5mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
IRF1010EZSPBF

AUTOMOTIVE MOSFET

Description ThisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturescombi

IRF

International Rectifier

IRF
IRF1010EZSPBF

Advanced Process Technology

Description ThisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturescombi

IRF

International Rectifier

IRF
IRF1010EZSTRLP

Advanced Process Technology

Description ThisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturescombi

IRF

International Rectifier

IRF
IRF1010N

Power MOSFET(Vdss=55V, Rds(on)=11mohm, Id=85A??

VDSS=55V RDS(on)=11mΩ ID=85A‡ Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesig

IRF

International Rectifier

IRF
IRF1010NL

Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=85A??

Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p

IRF

International Rectifier

IRF
IRF1010NL

Fully Avalanche Rated

Description TheD2PakisasurfacemountpowerpackagecapableofaccommodatingdiesizesuptoHEX-4.Itprovidesthehighestpowercapabilityandthelowestpossibleonresistanceinanyexistingsurfacemountpackage.TheD2Pakissuitableforhighcurrentapplicationsbecauseofitslowinter

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI
IRF1010NLPBF

HEXFET짰 Power MOSFET

Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p

IRF

International Rectifier

IRF
IRF1010NPBF

HEXFET Power MOSFET

Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,pr

IRF

International Rectifier

IRF
IRF1010NPBF

Advanced Process Technology Ultra Low On-Resistance

Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,pr

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI
IRF1010NS

Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=85A??

Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p

IRF

International Rectifier

IRF
IRF1010NS

Fully Avalanche Rated

Description TheD2PakisasurfacemountpowerpackagecapableofaccommodatingdiesizesuptoHEX-4.Itprovidesthehighestpowercapabilityandthelowestpossibleonresistanceinanyexistingsurfacemountpackage.TheD2Pakissuitableforhighcurrentapplicationsbecauseofitslowinter

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI
IRF1010NSPBF

HEXFET짰 Power MOSFET

Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p

IRF

International Rectifier

IRF
IRF1010Z

AUTOMOTIVE MOSFET

AUTOMOTIVEMOSFET Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitc

IRF

International Rectifier

IRF
IRF1010Z

N-Channel MOSFET Transistor

•DESCRITION •reliabledeviceforuseinawidevarietyofapplications •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤7.5mΩ •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperati

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
IRF1010ZL

AUTOMOTIVE MOSFET

AUTOMOTIVEMOSFET Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitc

IRF

International Rectifier

IRF
IRF1010ZS

AUTOMOTIVE MOSFET

AUTOMOTIVEMOSFET Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitc

IRF

International Rectifier

IRF
IRF1018EPBF

HEXFET Power MOSFET

Benefits ●ImprovedGate,AvalancheandDynamicdv/dtRuggedness ●FullyCharacterizedCapacitanceandAvalancheSOA ●EnhancedbodydiodedV/dtanddI/dtCapability Applications ●HighEfficiencySynchronousRectificationinSMPS ●UninterruptiblePowerSupply ●HighSpeedPowerSwitching

IRF

International Rectifier

IRF
IRF1018ESLPBF

HEXFET Power MOSFET

Benefits ●ImprovedGate,AvalancheandDynamicdv/dtRuggedness ●FullyCharacterizedCapacitanceandAvalancheSOA ●EnhancedbodydiodedV/dtanddI/dtCapability Applications ●HighEfficiencySynchronousRectificationinSMPS ●UninterruptiblePowerSupply ●HighSpeedPowerSwitching

IRF

International Rectifier

IRF
IRF1018ESPBF

HEXFET Power MOSFET

Benefits ●ImprovedGate,AvalancheandDynamicdv/dtRuggedness ●FullyCharacterizedCapacitanceandAvalancheSOA ●EnhancedbodydiodedV/dtanddI/dtCapability Applications ●HighEfficiencySynchronousRectificationinSMPS ●UninterruptiblePowerSupply ●HighSpeedPowerSwitching

IRF

International Rectifier

IRF
IRF1104

Power MOSFET(Vdss=40V, Rds(on)=0.009ohm, Id=100A??

VDSS=40V RDS(on)=0.009Ω ID=100A Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignth

IRF

International Rectifier

IRF
IRF1104L

HEXFET Power MOSFET

VDSS=40V RDS(on)=0.009Ω ID=100A Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignth

IRF

International Rectifier

IRF
IRF1104LPBF

HEXFET Power MOSFET

VDSS=40V RDS(on)=0.009Ω ID=100A Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignt

IRF

International Rectifier

IRF
IRF1104PBF

HEXFET POWER MOSFET ( VDSS = 40V , RDS(on) = 0.009廓 , ID = 100A )

VDSS=40V RDS(on)=0.009Ω ID=100A Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignth

IRF

International Rectifier

IRF
IRF1104S

HEXFET Power MOSFET

VDSS=40V RDS(on)=0.009Ω ID=100A Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignth

IRF

International Rectifier

IRF
IRF1104SPBF

HEXFET Power MOSFET

VDSS=40V RDS(on)=0.009Ω ID=100A Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignt

IRF

International Rectifier

IRF
IRF120

N-Channel Power MOSFETs, 11 A, 60-100 V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighspeedapplications,suchasswitchingpowersupplies,converters,ACandDCmotorcontrols,relayandsolenoiddriversandotherpulsecircuits. •LowRDs

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI
IRF120

IRF120-123/IRF520-523 MTP10N08/10N10 N-Channel Power MOSFETs

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighspeedapplications,suchasswitchingpowersupplies,converters,ACandDCmotorcontrols,relayandsolenoiddriversandotherpulsecircuits. •LowRDs

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI
IRF120

Nanosecond Switching Speeds

DESCRIPTION •DrainCurrentID=8A@TC=25℃ •DrainSourceVoltage-:VDSS=100V(Min) •StaticDrain-SourceOn-Resistance:RDS(on)=0.3Ω(Max) •NanosecondSwitchingSpeeds APPLICATIONS •Switchingpowersupplies •Motorcontrols,InvertersandChoppers •Audioamplifiersandhighenergypul

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
IRF120

N-Channel Power MOSFETs, 11 A, 60-100 V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighspeedapplications,suchasswitchingpowersupplies,converters,ACandDCmotorcontrols,relayandsolenoiddriversandotherpulsecircuits. •LowRDs

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI
IRF120

N-CHANNEL POWER MOSFETS

FEATURES •LowRDs

SamsungSamsung semiconductor

三星三星半导体

Samsung
IRF120

N-Channel Power MOSFETs, 11 A, 60-100 V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighspeedapplications,suchasswitchingpowersupplies,converters,ACandDCmotorcontrols,relayandsolenoiddriversandotherpulsecircuits. •LowRDs

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
IRF120

8.0A and 9.2A, 80V and 100V, 0.27 and 0.36 Ohm, N-Channel, Power MOSFETs

Description TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplica

Intersil

Intersil Corporation

Intersil
IRF120-123

N-Channel Power MOSFETs, 11 A, 60-100 V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighspeedapplications,suchasswitchingpowersupplies,converters,ACandDCmotorcontrols,relayandsolenoiddriversandotherpulsecircuits. •LowRDs

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
IRF121

N-CHANNEL POWER MOSFETS

FEATURES •LowRDs

SamsungSamsung semiconductor

三星三星半导体

Samsung

IRF产品属性

  • 类型

    描述

  • 型号

    IRF

  • 制造商

    VISHAY

  • 制造商全称

    Vishay Siliconix

  • 功能描述

    Inductors Epoxy Conformal Coated Uniform Roll Coated

IRF供应商更多...

更新时间：2024-9-22 22:30:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市纳艾斯科技有限公司
IRF5NJ9540
IR
21+
SMD-0.5
6800
全新原装进口正品现货,假一赔十。深圳纳艾斯科技有限公司,主营HONEYWE,ADI原装进口正品CI,可开17%增值税发票
询价
瀚佳科技(深圳)有限公司
IRF010TR
IR
21+
35200
一级代理/放心采购
询价
深圳市英博尔电子有限公司
IRFR9024NTRPBF
INFINEON
23+
TO-252
10000
全新、原装
询价
深圳兆威电子有限公司
IRFU5305PBF
INFINEON/英飞凌
23+
TO-251
90000
全系列供应价格优势 只卖原装正品 可做含税
询价
深圳市华斯顿科技有限公司
IRFP460PBF
VISHAY
22+23+
TO-247
8000
全新原装公司.柜台现货.特价热卖!可售样!绝对原装正品全新进口深圳现货
询价
深圳市胜彬电子有限公司
IRF7425TRPBF
INFINEON/英飞凌
22+
SOP8
40000
A3-7货柜原装正品支持实单
询价
深圳市一线半导体有限公司
IRF014NTR
IR
SOT-223
59
询价
深圳市振鑫微电子科技有限公司
IRF010TR
IR
23+
589610
新到现货 原厂一手货源 价格秒杀代理!
询价
标准国际(香港)有限公司
IRFR2405
IR
06+
TO-252
100
公司原装现货
询价
深圳市勤思达科技有限公司
IRF3710S
IR
23+
SOT-263
2000
原装正品,欢迎咨询
询价

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