位置:首页 > IC中文资料第11661页 > IRC
IRC价格
参考价格:¥133.5510
型号:IRC1 品牌:Mean Well 备注:这里有IRC多少钱,2024年最近7天走势,今日出价,今日竞价,IRC批发/采购报价,IRC行情走势销售排行榜,IRC报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
IRC | Power MOSFET(Vdss=200V, Rds(on)=0.40ohm, Id=9.0A) 文件:229.76 Kbytes Page:8 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | ||
compact type metal clad wire wound resistors [RaRaohm] CompactTypeMetalCladWireWoundResistors | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
compact type metal clad wire wound resistors [RaRaohm] CompactTypeMetalCladWireWoundResistors | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
compact type metal clad wire wound resistors [RaRaohm] CompactTypeMetalCladWireWoundResistors | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
MIKRON IRC 35 TO IRC 150 TYPICALAPPLICATIONS SinglepointtemperaturecalibrationsofpointIRpyrometers Fixedmountandportablepyrometercalibrationverification | ADVANCEDENERGYAdvanced Energy Industries, Inc. 先进能源先进能源工业公司 | |||
compact type metal clad wire wound resistors [RaRaohm] CompactTypeMetalCladWireWoundResistors | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
Proximity inductive sensors with rectangular housing and 5 positions rotatable head Description Inductiveproximitysensorswith40mmx40mm rectangularhousingsforuseinharshambient conditionstodetectmetalobjectswithoutcontact andwear-free. Thesensorsgenerateanelectromagneticfield whichinteractswiththedetectedobjectandare characterizedbyalongs | CARLOGAVAZZICarlo Gavazzi Holding AG Carlo Gavazzi Holding AG | |||
Proximity inductive sensors with rectangular housing and 5 positions rotatable head Description Inductiveproximitysensorswith40mmx40mm rectangularhousingsforuseinharshambient conditionstodetectmetalobjectswithoutcontact andwear-free. Thesensorsgenerateanelectromagneticfield whichinteractswiththedetectedobjectandare characterizedbyalongs | CARLOGAVAZZICarlo Gavazzi Holding AG Carlo Gavazzi Holding AG | |||
Proximity inductive sensors with rectangular housing and 5 positions rotatable head Description Inductiveproximitysensorswith40mmx40mm rectangularhousingsforuseinharshambient conditionstodetectmetalobjectswithoutcontact andwear-free. Thesensorsgenerateanelectromagneticfield whichinteractswiththedetectedobjectandare characterizedbyalongs | CARLOGAVAZZICarlo Gavazzi Holding AG Carlo Gavazzi Holding AG | |||
Proximity inductive sensors with rectangular housing and 5 positions rotatable head Description Inductiveproximitysensorswith40mmx40mm rectangularhousingsforuseinharshambient conditionstodetectmetalobjectswithoutcontact andwear-free. Thesensorsgenerateanelectromagneticfield whichinteractswiththedetectedobjectandare characterizedbyalongs | CARLOGAVAZZICarlo Gavazzi Holding AG Carlo Gavazzi Holding AG | |||
Proximity inductive sensors with rectangular housing and 5 positions rotatable head Description Inductiveproximitysensorswith40mmx40mm rectangularhousingsforuseinharshambient conditionstodetectmetalobjectswithoutcontact andwear-free. Thesensorsgenerateanelectromagneticfield whichinteractswiththedetectedobjectandare characterizedbyalongs | CARLOGAVAZZICarlo Gavazzi Holding AG Carlo Gavazzi Holding AG | |||
Power MOSFET(Vdss=100V, Rds(on)=0.16ohm, Id=14A) HEXFET®PowerMOSFET VDSS=100V RDS(on)=0.16Ω ID=14A | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
Power MOSFET(Vdss=100V, Rds(on)=0.16ohm, Id=14A) HEXFET®PowerMOSFET VDSS=100V RDS(on)=0.16Ω ID=14A | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
Power MOSFET(Vdss=100V, Rds(on)=0.077ohm, Id=28A) Continuousdraincurrent28A@Tc=25degC,Vgs=10V.Drain-to-sourcebreakdownvoltage100V.Drain-to-sourceon-resistance0.077Ohm | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
HEXFET POWER MOSFET ( VDSS=100V , RDS(on)=0.077廓 , ID=28A ) Continuousdraincurrent28A@Tc=25degC,Vgs=10V.Drain-to-sourcebreakdownvoltage100V.Drain-to-sourceon-resistance0.077OhmLead-Free | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
compact type metal clad wire wound resistors [RaRaohm] CompactTypeMetalCladWireWoundResistors | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
HEXFET POWER MOSFET HEXFET®PowerMOSFET | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
Power MOSFET(Vdss=250V, Rds(on)=0.45ohm, Id=8.1A) HEXFETPowerMOSFET | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
Power MOSFET(Vdss=200V, Rds(on)=0.18ohm, Id=18A) Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. •Dynamicdv/dtRating •RepetitiveAvalancheRated •CurrentSense •FastSwitching •Ease | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
HEXFET POWER MOSFET Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. •Dynamicdv/dtRating •RepetitiveAvalancheRated •CurrentSense •FastSwitching •Ease | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
Power MOSFET(Vdss=250V, Rds(on)=0.28ohm, Id=14A) HEXFET®PowerMOSFET ●Dynamicdv/dtRating ●RepetitiveAvalancheRated ●CurrentSense ●FastSwitching ●EaseofParalleling ●SimpleDriveRequirements | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
Power MOSFET(Vdss=400V, Rds(on)=1.0ohm, Id=5.5A) Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. •Dynamicdv/dtRating •RepetitiveAvalancheRated •CurrentSense •FastSwitching •Ease | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
Power MOSFET(Vdss=400V, Rds(on)=0.55ohm, Id=10A) Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. •Dynamicdv/dtRating •RepetitiveAvalancheRated •CurrentSense •FastSwitching •Ease | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
compact type metal clad wire wound resistors [RaRaohm] CompactTypeMetalCladWireWoundResistors | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
Power MOSFET(Vdss=500V, Rds(on)=1.5ohm, Id=4.5A)
| IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
Power MOSFET(Vdss=500V, Rds(on)=0.85ohm, Id=8.0A) Description ThirdGenerationHEXFETsfrominternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheHEXSensedeviceprovidesanaccuratefractionofthedraincurrentthroughtheadditionaltw | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
HEXFET Power MOSFET Description ThirdGenerationHEXFETsfrominternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheHEXSensedeviceprovidesanaccuratefractionofthedraincurrentthroughtheadditionaltw | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
General Purpose Thick Film Chip Resistor WCRSeries •Tolerancesto±0.5 •TCRdownto±100ppm/°C •Zeroohmjumpersavailable •Wideohmicrangefrom1Wto10MW •NowsuppliedwithRoHScompliantterminations | IRCTTIRC - a TT electronics Company. IRC-TTIRC-TT电子公司 | |||
Power MOSFET(Vdss=55V, Rds(on)=0.040ohm, Id=26A) Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevice,lowon-resistanceandcost-effectiveness. TheHEXSencedeviceprovidesanaccuratefractionofthedraincurrentthroughtheadditionaltwoleads | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
Power MOSFET(Vdss=60V, Rds(on)=0.050ohm, Id=30A) Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevice,lowon-resistanceandcost-effectiveness. TheHEXSencedeviceprovidesanaccuratefractionofthedraincurrentthroughtheadditionaltwoleads | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
HEXFET Power MOSFET
| IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
Power MOSFET(Vdss=60V, Rds(on)=0.028ohm, Id=50A) Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevice,lowon-resistanceandcost-effectiveness. TheHEXSensedeviceprovidesanaccuratefractionofthedraincurrentthroughtheadditionaltwoleads | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
包装:盒 描述:REMOTE BOX FOR TS/TN 1500/3000 线路保护,配电,备用 配件 | MEAN WELL USA Inc. MEAN WELL USA Inc. | |||
Power Inverter Remote Control 文件:353.96 Kbytes Page:1 Pages | MEANWELLMean Well Enterprises Co., Ltd. 明纬(广州)明纬(广州)电子有限公司 | |||
Power Inverter Remote Control 文件:353.37 Kbytes Page:1 Pages | MEANWELLMean Well Enterprises Co., Ltd. 明纬(广州)明纬(广州)电子有限公司 | |||
Power Inverter Remote Control 文件:353.37 Kbytes Page:1 Pages | MEANWELLMean Well Enterprises Co., Ltd. 明纬(广州)明纬(广州)电子有限公司 | |||
Introduction of STC15W201S series MCU (In abundant supply) 文件:252.7 Kbytes Page:12 Pages | ETC1List of Unclassifed Manufacturers 未分类制造商 | |||
Super Strong Anti-Disturbance, Super Advanced Encryption 文件:9.18335 Mbytes Page:887 Pages | STCSTC 宏晶科技 | |||
VFIR 16 Mb/Sec Controller and Transciever 文件:138.71 Kbytes Page:4 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
Power Inverter Remote Control 文件:353.96 Kbytes Page:1 Pages | MEANWELLMean Well Enterprises Co., Ltd. 明纬(广州)明纬(广州)电子有限公司 | |||
Power Inverter Remote Control 文件:353.37 Kbytes Page:1 Pages | MEANWELLMean Well Enterprises Co., Ltd. 明纬(广州)明纬(广州)电子有限公司 | |||
包装:盒 描述:REMOTE BOX FOR TS700/3000 线路保护,配电,备用 配件 | MEAN WELL USA Inc. MEAN WELL USA Inc. | |||
Power Inverter Remote Control 文件:353.96 Kbytes Page:1 Pages | MEANWELLMean Well Enterprises Co., Ltd. 明纬(广州)明纬(广州)电子有限公司 | |||
Power Inverter Remote Control 文件:353.37 Kbytes Page:1 Pages | MEANWELLMean Well Enterprises Co., Ltd. 明纬(广州)明纬(广州)电子有限公司 | |||
SMD Type 940nm Infrared Emitter 文件:768.79 Kbytes Page:8 Pages | CTMICROCT Micro International Corporation CT Micro国际公司 | |||
Infrared Calibrator 文件:88.78 Kbytes Page:8 Pages | EXTECHExtech Instruments Corporation. Extech Instruments Corporation. | |||
SMD Type 940nm Infrared Emitter 文件:737.63 Kbytes Page:8 Pages | CTMICROCT Micro International Corporation CT Micro国际公司 | |||
INSULATED GATE BIPOLAR TRANSISTOR 文件:167.69 Kbytes Page:8 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
HEXFET짰 Power MOSFET 文件:1.30865 Mbytes Page:9 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
Power MOSFET(Vdss=200V, Rds(on)=0.40ohm, Id=9.0A) 文件:229.76 Kbytes Page:8 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
HEXFET Power MOSFET 文件:1.17673 Mbytes Page:9 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
Dynamic dv/df Rating 文件:202.94 Kbytes Page:9 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
Dynamic dv/df Rating 文件:202.94 Kbytes Page:9 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
INFRARED COMMUNICATIONS CONTROLLER 文件:434.81 Kbytes Page:79 Pages | SMSC SMSC | |||
Infrared Communications Controller 文件:510.31 Kbytes Page:87 Pages | SMSC SMSC | |||
HEXFET POWER MOSFET 文件:226.69 Kbytes Page:8 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
Infrarot-Temperatur-Messger채te 文件:361.78 Kbytes Page:3 Pages | ASM-SENSOR ASM GmbH | |||
Infrarot-Temperatur-Messger채te 文件:361.78 Kbytes Page:3 Pages | ASM-SENSOR ASM GmbH | |||
Infrarot-Temperatur-Messger채te 文件:361.78 Kbytes Page:3 Pages | ASM-SENSOR ASM GmbH | |||
Infrarot-Temperatur-Messger채te 文件:361.78 Kbytes Page:3 Pages | ASM-SENSOR ASM GmbH |
IRC产品属性
- 类型
描述
- 型号
IRC
- 制造商
IRF
- 制造商全称
International Rectifier
- 功能描述
Power MOSFET(Vdss=200V, Rds(on)=0.40ohm, Id=9.0A)
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
IR/VISHAY |
TO220-5 |
30216 |
提供BOM表配单TEL:0755-83759919QQ:2355705587杜S |
||||
STC(宏晶) |
23+ |
LQFP-48 |
30000 |
原装正品公司现货,假一赔十! |
|||
IR |
22+ |
TO220 |
3000 |
十七年VIP会员,诚信经营,一手货源,原装正品可零售! |
|||
IR |
21+ |
TO-220-5 |
56000 |
公司进口原装现货 批量特价支持 |
|||
VBSEMI/台湾微碧 |
22+21+ |
TO220AB |
5049 |
16年电子元件现货供应商 终端BOM表可配单提供样品 |
|||
IR |
23+ |
TO-220-5 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
|||
23+ |
N/A |
90650 |
正品授权货源可靠 |
||||
IR |
24+ |
TO220-5 |
58000 |
全新原厂原装正品现货,可提供技术支持、样品免费! |
|||
STC(宏晶) |
23+ |
LQFP-64S |
19800 |
原装正品支持实单 |
|||
IR |
23+ |
CDIP18 |
12800 |
##公司主营品牌长期供应100%原装现货可含税提供技术 |
IRC规格书下载地址
IRC参数引脚图相关
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- IRAUDAMP10
- IRA-S410ST01
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- IRAMY20UP60B
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- IRADK31
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IRC数据表相关新闻
IRF1407PBF
IRF1407PBF
2022-7-22IR3899MTRPBF 原装正品.仓库现货
华富芯深圳智能科技有限公司
2022-2-7IRF1404ZPBF
深圳市科恒伟业电子有限公司深圳市福田区华强北振兴路101号华匀大厦2栋5楼516网站http://www.kehengweiyedz.cn网站http://www.kehengweiye.com邮箱:yulin522@126.com0755-8320005015817287769柯先生
2020-4-18IRA-S210ST01
IRA-S210ST01,全新原装现货当天发货或门市自取0755-82732291.
2020-2-17IRF130CHP1100,IRF1310N,IRF1310NL,IRF1310NS,IRF1404PBF
IRF130CHP1100,IRF1310N,IRF1310NL,IRF1310NS,IRF1404PBF
2020-1-12IR51H224-自激式半桥
特点·输出功率MOSFET在半桥配置·高侧栅极驱动器引导操作设计·自举二极管集成包(HD型)·精确的定时控制两个功率MOSFET匹配延迟获得50%的占空比匹配死区的1.2us·内部振荡器具有可编程的频率·15.6V齐纳钳位VCC的离线运行的半桥式输出是用RT淘汰·微功率启动说明该IR51H(四)XXX是完整的高电压,高转速,selfoscillating半桥电路.专有的HVIC和闩锁免疫CMOS技术,随着的HEXFET®功率MOSFET技术,使
2013-2-8
DdatasheetPDF页码索引
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