MOSFET OptiMOSTM 5 Power-Transistor, 150 V

Features • N-channel, normal level • Very low on-resistance RDS(on) • Very low reverse recovery charge (Qrr) • Superior thermal resistance • 100 avalanche tested • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21

OptiMOS ™功率 MOSFET 150 V，采用 PQFN 5x6 mm2 Source-Down 封装，具有业界领先的 RDS(on) 。

MOSFET OptiMOSTM 5 Power-Transistor, 150 V

Features • N-channel, normal level • Very low on-resistance RDS(on) • Superior thermal resistance • 100% avalanche tested • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21 • Very low reverse recovery charge (Qrr)

MOSFET OptiMOS™ 5 Power‑Transistor, 150 V

Features • N‑channel, normal level • Very low on‑resistance RDS(on) • Superior thermal resistance • Optimized design for double side cooling • 100% avalanche tested • Pb‑free lead plating; RoHS compliant • Halogen‑free according to IEC61249‑2‑21 • Very low reverse recovery charge (Qrr)

N-Channel Power MOSFET

MOSFET OptiMOSTM 5 Power-Transistor, 150 V

Features • N-channel, normal level • Very low on-resistance RDS(on) • Superior thermal resistance • 100 avalanche tested • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21

MOSFET OptiMOSTM 5 Power-Transistor, 150 V

Features • N-channel, normal level • Very low on-resistance RDS(on) • Superior thermal resistance • 100 avalanche tested • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21