MOSFET OptiMOSTM 5 Power-Transistor, 100 V

Features • N-channel, normal level • Very low on-resistance RDS(on) • Superior thermal resistance • 100% avalanche tested • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21

OptiMOS™ power MOSFETs 100 V in PQFN 5x6 Source-Down package with industry-leading RDS(on).

MOSFET OptiMOSTM 5 Power-Transistor, 100 V

Features • N-channel, normal level • Very low on-resistance RDS(on) • Superior thermal resistance • 100 avalanche tested • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21

MOSFET OptiMOS™ 5 Power‑Transistor, 100 V

Features • N‑channel, normal level • Very low on‑resistance RDS(on) • Superior thermal resistance • Optimized design for double side cooling • 100% avalanche tested • Pb‑free lead plating; RoHS compliant • Halogen‑free according to IEC61249‑2‑21

MOSFET OptiMOS™ 5 Power‑Transistor, 100 V

Features • N‑channel, normal level • Very low on‑resistance RDS(on) • Superior thermal resistance • Optimized design for double side cooling • 100% avalanche tested • Pb‑free lead plating; RoHS compliant • Halogen‑free according to IEC61249‑2‑21

OptiMOS ™功率 MOSFET 100 V，采用 PQFN 5x6 源极向下中心栅极 DSC 封装，具有行业领先的 RDS(on)

OptiMOS ™功率 MOSFET 100 V 采用 PQFN 5x6 源极向下 DSC 封装，具有业界领先的 RDS(on)。