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IPW65R080CFD价格
参考价格：￥32.2349
型号：IPW65R080CFD 品牌：INFINEON 备注：这里有IPW65R080CFD多少钱，2025年最近7天走势，今日出价，今日竞价，IPW65R080CFD批发/采购报价，IPW65R080CFD行情走势销售排行榜，IPW65R080CFD报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IPW65R080CFD | 650V CoolMOS CFD Power Transistor Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. 650V CoolMOS™ CFD series combines the experience of the leading SJ MOSFET supplier with high class innovation. The resu | Infineon 英飞凌 |   | |
IPW65R080CFD | N-Channel MOSFET Transistor • DESCRITION • Fast Switching • FEATURES • Static drain-source on-resistance: RDS(on)≤80mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation | ISC 无锡固电 | | |
IPW65R080CFD | 500 V-950 V CoolMOS™ N 沟道功率 MOSFET | Infineon 英飞凌 | | |
IPW65R080CFD | Metal Oxide Semiconductor Field Effect Transistor 文件：1.11459 Mbytes Page：15 Pages | Infineon 英飞凌 | | |
Metal Oxide Semiconductor Field Effect Transistor Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. 650V CoolMOS™ CFD series combines the experience of the leading SJ MOSFET supplier with high class innovation. The resu | Infineon 英飞凌 | | ||
Metal Oxide Semiconductor Field Effect Transistor 文件：1.11459 Mbytes Page：15 Pages | Infineon 英飞凌 | | ||
20V-650V汽车级MOSFET | Infineon 英飞凌 | | ||
650V CoolMOS CFD Power Transistor Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. 650V CoolMOS™ CFD series combines the experience of the leading SJ MOSFET supplier with high class innovation. The resu | Infineon 英飞凌 | | ||
N-Channel MOSFET Transistor • DESCRITION • Fast Switching • FEATURES • Static drain-source on-resistance: RDS(on)≤80mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation | ISC 无锡固电 | |
IPW65R080CFD产品属性
- 类型
描述
- 型号
IPW65R080CFD
- 功能描述
MOSFET
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON |
22+ |
NA |
6520 |
原盘原标 公司现货/支持实单 |
|||
Infineon(英飞凌) |
24+ |
PG-TO247-3 |
8328 |
原厂可订货,技术支持,直接渠道。可签保供合同 |
|||
INFINEON/英飞凌 |
23+/24+ |
TO-247 |
9865 |
原装正品,专业分销MOSFET或IGBT开关IC |
|||
INFINEON |
25+ |
TO-247 |
6000 |
全新原装现货、诚信经营! |
|||
INFINEON |
22+ |
TO-247 |
4680 |
原装正品可支持验货,欢迎咨询 |
|||
INFINEON/英飞凌 |
2152+ |
TO247 |
8000 |
原装正品假一罚十 |
|||
INFINEON/英飞凌 |
24+ |
TO-247 |
50000 |
全新原装现货特价销售,欢迎来电查询 |
|||
INFINEON |
21+ |
TO -247 |
7200 |
全新原装公司现货
|
|||
INFINEON |
23+ |
N/A |
10000 |
正规渠道,只有原装! |
|||
Infineon(英飞凌) |
24+ |
TO-247 |
784 |
原厂直供,支持账期,免费供样,技术支持 |
IPW65R080CFD芯片相关品牌
IPW65R080CFD规格书下载地址
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IPW65R080CFD数据表相关新闻
IPW65R080CFDA是一种MOSFET（金属氧化物半导体场效应晶体管）
IPW65R080CFDA适用于各种电子设备和电路设计
2023-12-20IPW65R080CFDA
进口代理
2023-12-15IPW65R041CFD只做原装英飞凌专营
IPW65R041CFD只做原装英飞凌专营
2023-4-11IPW65R110CFDA
IPW65R110CFDA TO-247,功率场效应管, MOSFET, AEC-Q101, N通道, 650 V, 31.2 A, 0.099 ohm, TO-247, 通孔
2022-11-3IPW65R041CFD
公司原装正品 现货库存 价格优势 以质量求生存，以诚信谋发展
2022-5-12IPW65R041CFD英飞凌INFINEON原装现货，价格优势
ipw65r041cfd代理 原装正品 假一罚十
2019-11-1
DdatasheetPDF页码索引
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