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IPW60R190P6价格
参考价格：￥9.3987
型号：IPW60R190P6 品牌：Infineon 备注：这里有IPW60R190P6多少钱，2024年最近7天走势，今日出价，今日竞价，IPW60R190P6批发/采购报价，IPW60R190P6行情走势销售排行榜，IPW60R190P6报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IPW60R190P6 | N-ChannelMOSFETTransistor •DESCRITION •Fastswitching •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤190mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  |   |
IPW60R190P6 | MetalOxideSemiconductorFieldEffectTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies.CoolMOS™P6seriescombinesthe experienceoftheleadingSJMOSFETsupplierwithhighclassinnovation. Theoffereddevicesprovideallbenefitsofafastsw | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 |  | |
IPW60R190P6 | MetalOxideSemiconductorFieldEffectTransistor 文件：2.63097 Mbytes Page：19 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | |
MetalOxideSemiconductorFieldEffectTransistor 文件：2.63097 Mbytes Page：19 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
N-ChannelMOSFETTransistor •DESCRIPTION •ProvideallbenefitsofafastswitchingsuperjunctionMOSwhilenot sacrificingeaseofuse •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.19Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustde | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
N-ChannelMOSFETTransistor •DESCRITION •Fastswitching •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤190mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
MetalOxideSemiconductorFieldEffectTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies.CoolMOS™P6seriescombinesthe experienceoftheleadingSJMOSFETsupplierwithhighclassinnovation. Theoffereddevicesprovideallbenefitsofafastsw | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
IscN-ChannelMOSFETTransistor •FEATURES •DrainSourceVoltage- :VDSS=500V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=0.19Ω(Max) •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
MetalOxideSemiconductorFieldEffectTransistor 文件：3.09742 Mbytes Page：19 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | |
IPW60R190P6产品属性
- 类型
描述
- 型号
IPW60R190P6
- 功能描述
MOSFET 600V CoolMOS P6 MOSFET 190 Rds
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON/英飞凌 |
21+23+ |
TO-247 |
5215 |
16年电子元件现货供应商 终端BOM表可配单提供样品 |
|||
INFINEON |
21+ |
TO247 |
1574 |
||||
Infineon Technologies |
21+ |
TO2473 |
13880 |
公司只售原装,支持实单 |
|||
INFINEON/英飞凌 |
2023+ |
TO-247 |
7200 |
全新原装正品,优势价格 |
|||
INFINEON/英飞凌 |
14+ |
TO-247 |
20 |
||||
Infineon/英飞凌 |
23+ |
PG-TO247-3 |
12700 |
买原装认准中赛美 |
|||
Infineon/英飞凌 |
2023+ |
PG-TO247-3 |
6000 |
原装正品现货、支持第三方检验、终端BOM表可配单提供 |
|||
INFINEON TECHNOLOGIES AG |
23+ |
SMD |
918000 |
明嘉莱只做原装正品现货 |
|||
Infineon/英飞凌 |
23+ |
PG-TO247-3 |
25000 |
原装正品,假一赔十! |
|||
INFINEON/英飞凌 |
21+ |
TO-247 |
9852 |
只做原装正品现货!或订货假一赔十! |
IPW60R190P6芯片相关品牌
IPW60R190P6规格书下载地址
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IPW60R190P6数据表相关新闻
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DdatasheetPDF页码索引
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