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IPW60R190P6价格
参考价格：￥9.3987
型号：IPW60R190P6 品牌：Infineon 备注：这里有IPW60R190P6多少钱，2025年最近7天走势，今日出价，今日竞价，IPW60R190P6批发/采购报价，IPW60R190P6行情走势销售排行榜，IPW60R190P6报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IPW60R190P6 | N-Channel MOSFET Transistor • DESCRITION • Fast switching • FEATURES • Static drain-source on-resistance: RDS(on)≤190mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation | ISC 无锡固电 |   | |
IPW60R190P6 | Metal Oxide Semiconductor Field Effect Transistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies.CoolMOS™P6seriescombinesthe experienceoftheleadingSJMOSFETsupplierwithhighclassinnovation. Theoffereddevicesprovideallbenefitsofafastsw | Infineon 英飞凌 | | |
IPW60R190P6 | Metal Oxide Semiconductor Field Effect Transistor 文件：2.63097 Mbytes Page：19 Pages | Infineon 英飞凌 | | |
IPW60R190P6 | 500V-900V CoolMOS™ N-Channel Power MOSFET | Infineon 英飞凌 | | |
Metal Oxide Semiconductor Field Effect Transistor 文件：2.63097 Mbytes Page：19 Pages | Infineon 英飞凌 | | ||
N-Channel MOSFET Transistor • DESCRIPTION • Provide all benefits of a fast switching super junction MOS while not sacrificing ease of use • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.19Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust de | ISC 无锡固电 | | ||
N-Channel MOSFET Transistor • DESCRITION • Fast switching • FEATURES • Static drain-source on-resistance: RDS(on)≤190mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation | ISC 无锡固电 | | ||
Metal Oxide Semiconductor Field Effect Transistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies.CoolMOS™P6seriescombinesthe experienceoftheleadingSJMOSFETsupplierwithhighclassinnovation. Theoffereddevicesprovideallbenefitsofafastsw | Infineon 英飞凌 | | ||
Isc N-Channel MOSFET Transistor • FEATURES • Drain Source Voltage- : VDSS=500V(Min) • Static Drain-Source On-Resistance : RDS(on) = 0.19Ω (Max) • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applications | ISC 无锡固电 | | ||
Metal Oxide Semiconductor Field Effect Transistor 文件：3.09742 Mbytes Page：19 Pages | Infineon 英飞凌 | |
IPW60R190P6产品属性
- 类型
描述
- 型号
IPW60R190P6
- 功能描述
MOSFET 600V CoolMOS P6 MOSFET 190 Rds
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON/英飞凌 |
24+ |
NA/ |
5215 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
INFINEON |
16+ |
TO-247 |
100 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
Infineon(英飞凌) |
23+ |
PG-TO247-3 |
19850 |
原装正品,假一赔十 |
|||
INFINEON/英飞凌 |
2450+ |
TO-247 |
9850 |
只做原装正品现货或订货假一赔十! |
|||
INFINEON TECHNOLOGIES AG |
25+ |
SMD |
918000 |
明嘉莱只做原装正品现货 |
|||
Infineon/英飞凌 |
23+ |
PG-TO247-3 |
12700 |
买原装认准中赛美 |
|||
NA |
23+ |
NA |
26094 |
10年以上分销经验原装进口正品,做服务型企业 |
|||
Infineon/英飞凌 |
24+ |
PG-TO247-3 |
25000 |
原装正品,假一赔十! |
|||
INFINEON |
25+ |
TO-247 |
10000 |
原厂原装,价格优势 |
|||
INFINEON/英飞凌 |
25+ |
TO-247 |
30000 |
全新原装现货,价格优势 |
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IPW60R190P6规格书下载地址
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IPW60R190P6数据表相关新闻
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DdatasheetPDF页码索引
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