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IPW60R190E6价格
参考价格：￥10.7310
型号：IPW60R190E6 品牌：Infineon 备注：这里有IPW60R190E6多少钱，2025年最近7天走势，今日出价，今日竞价，IPW60R190E6批发/采购报价，IPW60R190E6行情走势销售排行榜，IPW60R190E6报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IPW60R190E6 | 600V CoolMOS E6 Power Transistor Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ E6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The offered de | Infineon 英飞凌 |   | |
IPW60R190E6 | N-Channel MOSFET Transistor • DESCRITION • Fast switching • FEATURES • Static drain-source on-resistance: RDS(on)≤190mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation | ISC 无锡固电 | | |
IPW60R190E6 | 600V CoolMOS™ E6 Power Transistor 文件：958.99 Kbytes Page：18 Pages | Infineon 英飞凌 | | |
IPW60R190E6 | 600V CoolMOS™ E6 Power Transistor 文件：958.98 Kbytes Page：18 Pages | Infineon 英飞凌 | | |
600V CoolMOS™ E6 Power Transistor 文件：958.99 Kbytes Page：18 Pages | Infineon 英飞凌 | | ||
N-Channel MOSFET Transistor • DESCRIPTION • Provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.19Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device | ISC 无锡固电 | | ||
N-Channel MOSFET Transistor • DESCRITION • Fast switching • FEATURES • Static drain-source on-resistance: RDS(on)≤190mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation | ISC 无锡固电 | | ||
600V CoolMOS E6 Power Transistor Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ E6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The offered de | Infineon 英飞凌 | | ||
600V CoolMOS™ E6 Power Transistor 文件：958.99 Kbytes Page：18 Pages | Infineon 英飞凌 | | ||
600V CoolMOS™ E6 Power Transistor 文件：958.98 Kbytes Page：18 Pages | Infineon 英飞凌 | |
IPW60R190E6产品属性
- 类型
描述
- 型号
IPW60R190E6
- 功能描述
MOSFET 600V CoolMOS E6 Power Transistor
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Infineon(英飞凌) |
24+ |
NA/ |
8735 |
原厂直销,现货供应,账期支持! |
|||
INF |
24+ |
TO-247 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
Infineon/英飞凌 |
23+ |
PG-TO247-3 |
12700 |
买原装认准中赛美 |
|||
INFINEON/英飞凌 |
22+ |
TO-247 |
100000 |
代理渠道/只做原装/可含税 |
|||
三年内 |
1983 |
只做原装正品 |
|||||
INFINEON/英飞凌 |
25+ |
TO-247 |
32000 |
INFINEON/英飞凌全新特价IPW60R190E6即刻询购立享优惠#长期有货 |
|||
INFINEON/英飞凌 |
24+ |
TO-247 |
160216 |
明嘉莱只做原装正品现货 |
|||
INFINEON |
13+ |
TO-247 |
1035 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
Infineon(英飞凌) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
INFINEON |
21+ |
TO247 |
1523 |
公司现货,不止网上数量!原装正品,假一赔十! |
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IPW60R190E6规格书下载地址
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DdatasheetPDF页码索引
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