IPW60R190E6价格

参考价格:¥10.7310

型号:IPW60R190E6 品牌:Infineon 备注:这里有IPW60R190E6多少钱,2025年最近7天走势,今日出价,今日竞价,IPW60R190E6批发/采购报价,IPW60R190E6行情走势销售排行榜,IPW60R190E6报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IPW60R190E6

600V CoolMOS E6 Power Transistor

Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ E6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The offered de

Infineon

英飞凌

IPW60R190E6

N-Channel MOSFET Transistor

• DESCRITION • Fast switching • FEATURES • Static drain-source on-resistance: RDS(on)≤190mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

ISC

无锡固电

IPW60R190E6

600V CoolMOS™ E6 Power Transistor

文件:958.99 Kbytes Page:18 Pages

Infineon

英飞凌

IPW60R190E6

600V CoolMOS™ E6 Power Transistor

文件:958.98 Kbytes Page:18 Pages

Infineon

英飞凌

IPW60R190E6

500 V-950 V CoolMOS™ N 沟道功率 MOSFET

Infineon

英飞凌

600V CoolMOS™ E6 Power Transistor

文件:958.99 Kbytes Page:18 Pages

Infineon

英飞凌

N-Channel MOSFET Transistor

• DESCRIPTION • Provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.19Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device

ISC

无锡固电

N-Channel MOSFET Transistor

• DESCRITION • Fast switching • FEATURES • Static drain-source on-resistance: RDS(on)≤190mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

ISC

无锡固电

600V CoolMOS E6 Power Transistor

Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ E6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The offered de

Infineon

英飞凌

600V CoolMOS™ E6 Power Transistor

文件:958.99 Kbytes Page:18 Pages

Infineon

英飞凌

600V CoolMOS™ E6 Power Transistor

文件:958.98 Kbytes Page:18 Pages

Infineon

英飞凌

IPW60R190E6产品属性

  • 类型

    描述

  • 型号

    IPW60R190E6

  • 功能描述

    MOSFET 600V CoolMOS E6 Power Transistor

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2025-10-1 22:30:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
INF
24+
TO-247
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
Infineon/英飞凌
24+
PG-TO247-3
25000
原装正品,假一赔十!
INFINEON/英飞凌
24+
TO-247
160216
明嘉莱只做原装正品现货
INFINEON
25+23+
TO-247
15072
绝对原装正品全新进口深圳现货
Infineon/英飞凌
21+
PG-TO247-3
6820
只做原装,质量保证
INFINEON/英飞凌
24+
TO-247
10000
只做原厂渠道 可追溯货源
Infine
25+
25000
原厂原包 深圳现货 主打品牌 假一赔百 可开票!
Infineon(英飞凌)
24+
TO-247
7962
支持大陆交货,美金交易。原装现货库存。
INFINEON/英飞凌
24+
TO-247
43200
郑重承诺只做原装进口现货
Infineon
24+
*
5000
全新原装正品,现货销售

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