Metal Oxide Semiconductor Field Effect Transistor

Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The offered de

N-Channel MOSFET Transistor

• DESCRITION • Fast switching • FEATURES • Static drain-source on-resistance: RDS(on)≤125mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

600V CoolMOSª CFD7 Power Transistor

Features • Ultra-fast body diode • Low gate charge • Best-in-class reverse recovery charge (Qrr) • Improved MOSFET reverse diode dv/dt and diF/dt ruggedness • Lowest FOM RDS(on)*Qg and RDS(on)*Eoss • Best-in-class RDS(on) in SMD and THD packages

N-Channel MOSFET Transistor

• DESCRITION • High peak current capability • FEATURES • Static drain-source on-resistance: RDS(on)≤125mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

CoolMOS Power Transistor

Features • Lowest figure-of-merit RONxQg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant CoolMOS CP is specially designed for: • Hard switching topologies, for Serve

Increased MOSFET dv/dt ruggedness

MOSFET Metal Oxide Semiconductor Field Effect Transistor 600V CoolMOS™ P6 Power Transistor Applications    PFC stages, hard switching PWM stages and resonant switching stages    for e.g. PC Silverbox, Adapter, LCD & PDP TV, Lighting, Server, Telecom    and UPS.

Metal Oxide Semiconductor Field Effect Transistor

文件：1.3131 Mbytes Page：18 Pages

500V-900V CoolMOS™ N-Channel Power MOSFET

CoolMOS Power Transistor

文件：799.51 Kbytes Page：11 Pages

500 V-950 V CoolMOS™ N 沟道功率 MOSFET

CoolMOS Power Transistor

文件：799.51 Kbytes Page：11 Pages

Metal Oxide Semiconductor Field Effect Transistor

文件：2.79484 Mbytes Page：18 Pages

500 V-950 V CoolMOS™ N 沟道功率 MOSFET

N-Channel MOSFET Transistor

文件：335.63 Kbytes Page：2 Pages

N-Channel MOSFET Transistor

• DESCRIPTION • Ultra low gate charge • High peak current capability • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.125Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

N-Channel MOSFET Transistor

• DESCRITION • High peak current capability • FEATURES • Static drain-source on-resistance: RDS(on)≤125mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

Isc N-Channel MOSFET Transistor

• FEATURES • With TO-220F package • Low input capacitance and gate charge • Low gate input resistance • Reduced switching and conduction losses • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applica

CoolMOS Power Transistor

Features • Worldwide best RDS,on in TO220 Fullpak • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant CoolMOS CP is specially designed for: • Hard switching SMPS topolog

CoolMos Power Transistor

文件：562.68 Kbytes Page：10 Pages