型号 功能描述 生产厂家 企业 LOGO 操作
IPW60R045CPA

CoolMOS Power Transistor

Features • Worldwide best R ds,on in TO247 • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Automotive AEC Q101 qualified • Green package (RoHS compliant) CoolMOS CPA is specially designed for: • DC/DC converters for Automotive Applications

Infineon

英飞凌

IPW60R045CPA

N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 60A@ TC=25℃ · Drain Source Voltage -VDSS= 600V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.045Ω(Max)@VGS= 10V APPLICATIONS · Motor Drive, DC-DC Converter, Power Switch and Solenoid Drive.

ISC

无锡固电

IPW60R045CPA

20V-650V汽车级MOSFET

Infineon

英飞凌

CoolMOS Power Transistor

Features • Worldwide best R ds,on in TO247 • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant CoolMOS CP is specially designed for: • Hard switching SMPS topologies

Infineon

英飞凌

CoolMOSTM Power Transistor

Features • Worldwide best R ds,on in TO247 • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant CS CoolMOS is specially designed for: • Hard switching SMPS topologies

Infineon

英飞凌

N-Channel MOSFET Transistor

• DESCRITION • High peak current capability • FEATURES • Static drain-source on-resistance: RDS(on)≤45mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

ISC

无锡固电

CoolMOS Power Transistor

文件:584.61 Kbytes Page:11 Pages

Infineon

英飞凌

N-Channel MOSFET Transistor

• DESCRITION • High peak current capability • FEATURES • Static drain-source on-resistance: RDS(on)≤45mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

ISC

无锡固电

IPW60R045CPA产品属性

  • 类型

    描述

  • 型号

    IPW60R045CPA

  • 功能描述

    MOSFET CoolMOS Power Transistor

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2025-10-1 17:47:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
Infineon/英飞凌
24+
PG-TO247-3
25000
原装正品,假一赔十!
Infineon/英飞凌
21+
PG-TO247-3
6820
只做原装,质量保证
INFINEON/英飞凌
24+
TO-247
8500
原厂原包原装公司现货,假一赔十,低价出售
Infineon(英飞凌)
24+
TO-247
7814
支持大陆交货,美金交易。原装现货库存。
INFINEON/英飞凌
24+
TO-247
39197
郑重承诺只做原装进口现货
Infineon(英飞凌)
23+
标准封装
7000
原厂原装现货订货价格优势终端BOM表可配单提供样品
Infineon
原厂封装
9800
原装进口公司现货假一赔百
Infineon(英飞凌)
24+
标准封装
7000
原厂原装现货订货价格优势终端BOM表可配单提供样品
Infineon(英飞凌)
23+
标准封装
7000
公司只做原装,可来电咨询
Infineon/英飞凌
23+
PG-TO247-3
10000
原装正品,支持实单

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