位置:首页 > IC中文资料 > IPW47N60CFDC

型号 功能描述 生产厂家 企业 LOGO 操作

600V N-Channel MOSFET

Description SuperFET™ is, Fairchilds proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provid

FAIRCHILD

仙童半导体

600V N-Channel MOSFET

Description SuperFET™ is, Fairchilds proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provid

FAIRCHILD

仙童半导体

600V N-Channel MOSFET

Description SuperFET® MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on resistance and lower gate charge performance.This technology is tailored to minimize conduction loss, pr

FAIRCHILD

仙童半导体

Super Junction FREDFET

文件:402.11 Kbytes Page:5 Pages

ADPOW

Super Junction FREDFET

文件:402.11 Kbytes Page:5 Pages

ADPOW

更新时间:2026-5-24 17:02:01
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
FAIRCHILD/仙童
25+
TO-3P
880000
明嘉莱只做原装正品现货
FAIRCHILD
25+23+
TO-3P
13984
绝对原装正品全新进口深圳现货
ON/安森美
21+
TO-3PN-3
8080
只做原装,质量保证
ONSEMI/安森美
2025+
2500
原装进口价格优 请找坤融电子!
FAIRCHILD
24+
TO-3PN
8866
ONSEMI
25+
NA
15500
全新原装!优势库存热卖中!
FAIRCHILD
22+
TO-247
5000
全新原装现货!自家库存!
FSC
18+
TO-3P
85600
保证进口原装可开17%增值税发票
三年内
1983
只做原装正品
Fairchild(飞兆/仙童)
25+
封装
500000
源自原厂成本,高价回收工厂呆滞

IPW47N60CFDC数据表相关新闻

  • IPS1025HFQ 高压侧开关

    STMicroelectronics 采用 M0T5 VIPower 技术的单片架构采用了 QFN48L 封装

    2022-10-27
  • IPS1011SPBF

    原装正品现货

    2022-5-18
  • IPW60R041P6原装现货

    IPW60R041P6原装正品

    2021-8-11
  • IPW60R080P7

    IPW60R080P7,全新原装当天发货或门市自取0755-82732291.

    2019-9-20
  • IPW60R060P7

    IPW60R060P7

    2019-7-9
  • IPS0151-完全保护的功率MOSFET开关

    IPS0151/IPS0151S得到充分保护三端智能功率MOSFET,具有过电流,超温,防静电保护和漏源积极clamp.These器件结合一个HEXFET®功率MOSFET和栅极驱动器。他们提供全面的保护和在恶劣的环境中所需的高可靠性。该驱动程序允许开关时间短通过关闭提供有效的保护当温度超过165oC的功率MOSFET或当漏电流达到35A。该设备重新启动一次输入循环。雪崩活动能力显着增强夹具和覆盖最感性负载demagnetizations。 特点 •在温度关机 •在当前的关机 •有源钳位

    2012-11-14